BSB056N10NN3G
制造商:
物料参数
| P[tot] max: | 78.0W |
| V[DS] max: | 100.0V |
| Q[G](typ @10V): | 56.0nC |
| I[Dpuls] max: | 332.0A |
| R[th]: | 1.6K/W |
| Polarity: | N |
| C[iss]: | 4100.0pF |
| C[oss]: | 750.0pF |
| R[DS (on)](@10V) max: | 5.6mΩ |
| Micro-stencil: | IRF66MN-25 |
| I[D ](@25°C) max: | 83.0A |
| V[GS(th)]: | 2.7V |
| Package: | DirectFET (M) |
| Operating Temperature max: | 150.0°C |
| Budgetary Price €/1k: | 1.11 |
| Budgetary Price €/1k: | 1.11 |