状态: 已停产
Compliance: Pb A H P
Channel Polarity: P-Channel
Silicon Family: PowerTrench® T1
Package Name: DPAK
Type: Low-Medium Voltage
Gate Level: Logic
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): -30
RDS(on) Max @ VGS = 10 V (mΩ): 18500
Vgs (V): 20
Vgs(th) Max (V): 2.6
ID Max (A): -40
PD Max (W): 40
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): 31000
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 47
更多
Ciss Typ (pF): 1490
Qgd Typ @ VGS = 4.5 V (nC): 11.5
Qrr Typ (nC): -
Coss Typ (pF): 360
Crss Typ (pF): 270
Package Type: DPAK (Single Gauge) / ATPAK
MSL Type: 1
MSL Temp (°C): 260
ON Target: No
参考价格: Price N/A
ATP103-TL-H
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: P 沟道，功率 MOSFET，-30V，-55A，13mΩ
状态: 已停产
Compliance: Pb A H P
Channel Polarity: P-Channel
Silicon Family: PowerTrench® T1
Package Name: DPAK
Type: Low-Medium Voltage
Gate Level: Logic
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): -30
RDS(on) Max @ VGS = 10 V (mΩ): 13.5
Vgs (V): 20
Vgs(th) Max (V): 2.6
ID Max (A): -55
PD Max (W): 50
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): 20.5
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 76
更多
Ciss Typ (pF): 2430
Qgd Typ @ VGS = 4.5 V (nC): 8.7
Qrr Typ (nC): -
Coss Typ (pF): 555
Crss Typ (pF): 395
Package Type: DPAK (Single Gauge) / ATPAK
MSL Type: 1
MSL Temp (°C): 260
ON Target: No
参考价格: Price N/A
ATP106-TL-H
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: P 沟道功率 MOSFET -40V，-30A，25mΩ
状态: 已停产
Compliance: Pb A H P
Channel Polarity: P-Channel
Silicon Family: PowerTrench® T1
Package Name: DPAK
Type: Low-Medium Voltage
Gate Level: Logic
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): -40
RDS(on) Max @ VGS = 10 V (mΩ): 25
Vgs (V): 20
Vgs(th) Max (V): 2.6
ID Max (A): -30
PD Max (W): 40
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): 41
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 29
更多
Ciss Typ (pF): 1380
Qgd Typ @ VGS = 4.5 V (nC): 5.9
Qrr Typ (nC): -
Coss Typ (pF): 210
Crss Typ (pF): 150
Package Type: DPAK (Single Gauge) / ATPAK
MSL Type: 1
MSL Temp (°C): 260
ON Target: No
参考价格: Price N/A
ATP207-TL-H
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N 沟道，功率 MOSFET，40V，65A，9.1mΩ，单 ATPAK
状态: 已停产
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: NA
Type: Low-Medium Voltage
Gate Level: Logic
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 40
RDS(on) Max @ VGS = 10 V (mΩ): 9.1
Vgs (V): 20
Vgs(th) Max (V): 2.6
ID Max (A): 65
PD Max (W): 50
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): 15.5
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 54
更多
Ciss Typ (pF): 2710
Qgd Typ @ VGS = 4.5 V (nC): 11
Qrr Typ (nC): -
Coss Typ (pF): 330
Crss Typ (pF): 220
Package Type: DPAK (Single Gauge) / ATPAK
MSL Type: 1
MSL Temp (°C): 260
ON Target: No
参考价格: Price N/A
ATP213-TL-H
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N 沟道，功率 MOSFET，60V，50A，16mΩ，单 ATPAK
状态: 已停产
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: NA
Type: Low-Medium Voltage
Gate Level: Logic
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 60
RDS(on) Max @ VGS = 10 V (mΩ): 16
Vgs (V): 20
Vgs(th) Max (V): 2.6
ID Max (A): 50
PD Max (W): 50
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): 21
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 58
更多
Ciss Typ (pF): 3150
Qgd Typ @ VGS = 4.5 V (nC): 12.5
Qrr Typ (nC): -
Coss Typ (pF): 310
Crss Typ (pF): 190
Package Type: DPAK (Single Gauge) / ATPAK
MSL Type: 1
MSL Temp (°C): 260
ON Target: No
参考价格: Price N/A
状态: 已停产
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: NA
Type: Low-Medium Voltage
Gate Level: Logic
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 50
RDS(on) Max @ VGS = 10 V (mΩ): -
Vgs (V): 10
Vgs(th) Max (V): 2.6
ID Max (A): 35
PD Max (W): 40
RDS(on) Max @ VGS = 2.5 V (mΩ): 28
RDS(on) Max @ VGS = 4.5 V (mΩ): 23
Qg Typ @ VGS = 4.5 V (nC): 30
Qg Typ @ VGS = 10 V (nC): -
更多
Ciss Typ (pF): 2700
Qgd Typ @ VGS = 4.5 V (nC): 7.9
Qrr Typ (nC): -
Coss Typ (pF): 150
Crss Typ (pF): 110
Package Type: DPAK (Single Gauge) / ATPAK
MSL Type: 1
MSL Temp (°C): 260
ON Target: No
参考价格: Price N/A
ATP304-TL-H
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: P 沟道功率 MOSFET，-60V，-100A，6.5mΩ
状态: 生命周期终止
Compliance: Pb A H P
Channel Polarity: P-Channel
Silicon Family: PowerTrench® T1
Package Name: DPAK
Type: Low-Medium Voltage
Gate Level: Logic
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): -60
RDS(on) Max @ VGS = 10 V (mΩ): 6.5
Vgs (V): 20
Vgs(th) Max (V): 2.6
ID Max (A): -100
PD Max (W): 90
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): 8.9
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 240
更多
Ciss Typ (pF): 13000
Qgd Typ @ VGS = 4.5 V (nC): -
Qrr Typ (nC): -
Coss Typ (pF): 1080
Crss Typ (pF): 760
Package Type: DPAK (Single Gauge) / ATPAK
MSL Type: 1
MSL Temp (°C): 260
ON Target: No
参考价格: $2.1721
ATP401-TL-H
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N 沟道功率 MOSFET，60V，100A，3.7mΩ
状态: 已停产
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: NA
Type: Low-Medium Voltage
Gate Level: Logic
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 60
RDS(on) Max @ VGS = 10 V (mΩ): 3.7
Vgs (V): 20
Vgs(th) Max (V): 2.6
ID Max (A): 100
PD Max (W): 90
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): 5.2
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 260
更多
Ciss Typ (pF): 17000
Qgd Typ @ VGS = 4.5 V (nC): 60
Qrr Typ (nC): -
Coss Typ (pF): 1000
Crss Typ (pF): 770
Package Type: DPAK (Single Gauge) / ATPAK
MSL Type: 1
MSL Temp (°C): 260
ON Target: No
参考价格: Price N/A
BMS3003-1E
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: P 沟道，功率 MOSFET，-60V，-78A，6.5mΩ
状态: 已停产
Compliance: Pb A H P
Channel Polarity: P-Channel
Silicon Family: PowerTrench® T1
Package Name: TO-220FP
Type: Low-Medium Voltage
Gate Level: Logic
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): -60
RDS(on) Max @ VGS = 10 V (mΩ): 6.5
Vgs (V): 20
Vgs(th) Max (V): 2.6
ID Max (A): -78
PD Max (W): 40
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): 9
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 285
更多
Ciss Typ (pF): 13200
Qgd Typ @ VGS = 4.5 V (nC): -
Qrr Typ (nC): 470
Coss Typ (pF): 1300
Crss Typ (pF): 950
Package Type: TO-220-3 FullPak
MSL Type: NA
MSL Temp (°C): 0
ON Target: No
参考价格: Price N/A
BMS3004-1E
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: P 沟道，功率 MOSFET，-75V，-68A，8.5mΩ
状态: 已停产
Compliance: Pb A H P
Channel Polarity: P-Channel
Silicon Family: PowerTrench® T1
Package Name: TO-220FP
Type: Low-Medium Voltage
Gate Level: Logic
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): -75
RDS(on) Max @ VGS = 10 V (mΩ): 8.5
Vgs (V): 20
Vgs(th) Max (V): 2.6
ID Max (A): -68
PD Max (W): 40
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): 11.4
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 300
更多
Ciss Typ (pF): 13400
Qgd Typ @ VGS = 4.5 V (nC): 70
Qrr Typ (nC): 470
Coss Typ (pF): 1000
Crss Typ (pF): 740
Package Type: TO-220-3 FullPak
MSL Type: NA
MSL Temp (°C): 0
ON Target: No
参考价格: Price N/A