2N7000RLRAG
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N沟道增强模式场效应晶体管60V，200mA，5Ω
状态: 已停产
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: NA
Type: Small Signal
Gate Level: Logic
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 60
RDS(on) Max @ VGS = 10 V (mΩ): 5000
VGS Max (V): 20
Vgs(th) Max (V): 3
Id Max (A): 0.2
PD Max (W): 0.35
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): 5300
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): -
更多
Ciss Typ (pF): 60
Qgd Typ @ VGS = 4.5 V (nC): -
Qrr Typ (nC): -
Coss Typ (pF): 25
Crss Typ (pF): 5
Package Type: TO-92
MSL Type: NA
MSL Temp (°C): 0
ON Target: No
参考价格: Price N/A
2N7000RLRMG
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N沟道增强模式场效应晶体管60V，200mA，5Ω
状态: 已停产
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: NA
Type: Small Signal
Gate Level: Logic
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 60
RDS(on) Max @ VGS = 10 V (mΩ): 5000
VGS Max (V): 20
Vgs(th) Max (V): 3
Id Max (A): 0.2
PD Max (W): 0.35
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): 5300
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): -
更多
Ciss Typ (pF): 60
Qgd Typ @ VGS = 4.5 V (nC): -
Qrr Typ (nC): -
Coss Typ (pF): 25
Crss Typ (pF): 5
Package Type: TO-92
MSL Type: NA
MSL Temp (°C): 0
ON Target: No
参考价格: Price N/A
2N7000RLRPG
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N沟道增强模式场效应晶体管60V，200mA，5Ω
状态: 已停产
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: NA
Type: Small Signal
Gate Level: Logic
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 60
RDS(on) Max @ VGS = 10 V (mΩ): 5000
VGS Max (V): 20
Vgs(th) Max (V): 3
Id Max (A): 0.2
PD Max (W): 0.35
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): 5300
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): -
更多
Ciss Typ (pF): 60
Qgd Typ @ VGS = 4.5 V (nC): -
Qrr Typ (nC): -
Coss Typ (pF): 25
Crss Typ (pF): 5
Package Type: TO-92
MSL Type: NA
MSL Temp (°C): 0
ON Target: No
参考价格: Price N/A
2N7000G
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N沟道增强模式场效应晶体管60V，200mA，5Ω
状态: 已停产
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: NA
Type: Small Signal
Gate Level: Logic
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 60
RDS(on) Max @ VGS = 10 V (mΩ): 5000
VGS Max (V): 20
Vgs(th) Max (V): 3
Id Max (A): 0.2
PD Max (W): 0.35
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): 5300
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): -
更多
Ciss Typ (pF): 60
Qgd Typ @ VGS = 4.5 V (nC): -
Qrr Typ (nC): -
Coss Typ (pF): 25
Crss Typ (pF): 5
Package Type: TO-92
MSL Type: NA
MSL Temp (°C): 0
ON Target: No
参考价格: Price N/A
2N7002
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N沟道增强模式场效应晶体管60V，0.115A，7.5Ω
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: SOT-23
Type: Small Signal
Gate Level: Logic
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 60
RDS(on) Max @ VGS = 10 V (mΩ): 7500
VGS Max (V): ±20
Vgs(th) Max (V): 2.5
Id Max (A): 0.115
PD Max (W): 0.2
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): 7500
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 1
更多
Ciss Typ (pF): 20
Qgd Typ @ VGS = 4.5 V (nC): -
Qrr Typ (nC): -
Coss Typ (pF): 11
Crss Typ (pF): 4
Package Type: SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P
MSL Type: 1
MSL Temp (°C): 260
ON Target: No
参考价格: $0.1151
2N7002DW
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N 沟道增强型场效应晶体管 60V，0.115A，2Ω
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: SC-6
Type: Small Signal
Gate Level: Logic
Wide SOA Mosfets: 0
Configuration: Dual
OPN in older Technology: 0
V(BR)DSS Min (V): 60
RDS(on) Max @ VGS = 10 V (mΩ): Q1=Q2=2000
VGS Max (V): ±20
Vgs(th) Max (V): 2
Id Max (A): 0.115
PD Max (W): 0.2
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): Q1=Q2=7500
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): -
更多
Ciss Typ (pF): 37.8
Qgd Typ @ VGS = 4.5 V (nC): -
Qrr Typ (nC): -
Coss Typ (pF): 12.4
Crss Typ (pF): 6.5
Package Type: SC-88-6 / SC-70-6 / SOT-363-6
MSL Type: 1
MSL Temp (°C): 260
ON Target: No
参考价格: $0.0812
S2N7002ET1G
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N 沟道小信号 MOSFET 60V，310mA，2.5 Ω
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: SOT-23
Type: Small Signal
Gate Level: Logic
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 60
RDS(on) Max @ VGS = 10 V (mΩ): 2500
VGS Max (V): 20
Vgs(th) Max (V): 2.5
Id Max (A): 0.31
PD Max (W): 0.042
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): 3000
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 0.81
更多
Ciss Typ (pF): 26.7
Qgd Typ @ VGS = 4.5 V (nC): 0.08
Qrr Typ (nC): -
Coss Typ (pF): 4.6
Crss Typ (pF): 2.9
Package Type: SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P
MSL Type: 1
MSL Temp (°C): 260
ON Target: No
参考价格: $0.0453
2N7002ET1G
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N 沟道小信号 MOSFET 60V，310mA，2.5 Ω
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: SOT-23
Type: Small Signal
Gate Level: Logic
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 60
RDS(on) Max @ VGS = 10 V (mΩ): 2500
VGS Max (V): 20
Vgs(th) Max (V): 2.5
Id Max (A): 0.31
PD Max (W): 0.042
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): 3000
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 0.81
更多
Ciss Typ (pF): 26.7
Qgd Typ @ VGS = 4.5 V (nC): 0.08
Qrr Typ (nC): -
Coss Typ (pF): 4.6
Crss Typ (pF): 2.9
Package Type: SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P
MSL Type: 1
MSL Temp (°C): 260
ON Target: No
参考价格: $0.0256
2N7002ET7G
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N 沟道小信号 MOSFET 60V，310mA，2.5 Ω
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: SOT-23
Type: Small Signal
Gate Level: Logic
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 60
RDS(on) Max @ VGS = 10 V (mΩ): 2500
VGS Max (V): 20
Vgs(th) Max (V): 2.5
Id Max (A): 0.31
PD Max (W): 0.042
RDS(on) Max @ VGS = 2.5 V (mΩ): ~NA~
RDS(on) Max @ VGS = 4.5 V (mΩ): 3000
Qg Typ @ VGS = 4.5 V (nC): ~NA~
Qg Typ @ VGS = 10 V (nC): 0.81
更多
Ciss Typ (pF): 26.7
Qgd Typ @ VGS = 4.5 V (nC): 0.08
Qrr Typ (nC): ~NA~
Coss Typ (pF): 4.6
Crss Typ (pF): 2.9
Package Type: SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P
MSL Type: 1
MSL Temp (°C): 260
ON Target: No
参考价格: $0.0224
S2N7002ET7G
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N 沟道小信号 MOSFET 60V，310mA，2.5 Ω
状态: 已停产
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: SOT-23-3/5
Type: Small Signal
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): -
RDS(on) Max @ VGS = 10 V (mΩ): -
VGS Max (V): -
Vgs(th) Max (V): -
Id Max (A): -
PD Max (W): -
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): -
更多
Ciss Typ (pF): NA
Qgd Typ @ VGS = 4.5 V (nC): -
Qrr Typ (nC): -
Coss Typ (pF): -
Crss Typ (pF): -
Package Type: SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P
MSL Type: 1
MSL Temp (°C): 260
ON Target: No
参考价格: Price N/A