FDB024N08BL7
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N 沟道，PowerTrench® MOSFET，80V，229A，2.4mΩ
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T6
Package Name: D2PAK7
Type: Low-Medium Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 80
RDS(on) Max @ VGS = 10 V (mΩ): 2.4
Vgs (V): ±20
Vgs(th) Max (V): 4.5
ID Max (A): 229
PD Max (W): 246
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 137
更多
Ciss Typ (pF): 10170
Qgd Typ @ VGS = 4.5 V (nC): 28
Qrr Typ (nC): 112
Coss Typ (pF): 1670
Crss Typ (pF): 35
Package Type: D2PAK-7 / TO-263-7
MSL Type: 1
MSL Temp (°C): 245
ON Target: Yes
参考价格: $2.1273
FDB0250N807L
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 80 V N-沟道 PowerTrench® MOSFET
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T6
Package Name: D2PAK7
Type: Low-Medium Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 80
RDS(on) Max @ VGS = 10 V (mΩ): 2.2
Vgs (V): ±20
Vgs(th) Max (V): 4
ID Max (A): 240
PD Max (W): 214
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 143
更多
Ciss Typ (pF): 11000
Qgd Typ @ VGS = 4.5 V (nC): 25
Qrr Typ (nC): 81
Coss Typ (pF): 1435
Crss Typ (pF): 115
Package Type: D2PAK-7 / TO-263-7
MSL Type: 1
MSL Temp (°C): 245
ON Target: Yes
参考价格: $2.5138
FDB0260N1007L
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N 沟道 PowerTrench® MOSFET 100V，200A，2.6mΩ
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: D2PAK7
Type: Low-Medium Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 100
RDS(on) Max @ VGS = 10 V (mΩ): 2.6
Vgs (V): ±20
Vgs(th) Max (V): 4
ID Max (A): 200
PD Max (W): 250
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 84
更多
Ciss Typ (pF): 6101
Qgd Typ @ VGS = 4.5 V (nC): 17
Qrr Typ (nC): 97
Coss Typ (pF): 1343
Crss Typ (pF): 46
Package Type: D2PAK-7 / TO-263-7
MSL Type: 1
MSL Temp (°C): 245
ON Target: Yes
参考价格: $5.0223
FDB035AN06A0
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N 沟道 PowerTrench® MOSFET 60V，80 A，3.5 mΩ
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: D2PAK
Type: Low-Medium Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 60
RDS(on) Max @ VGS = 10 V (mΩ): 3.5
Vgs (V): 20
Vgs(th) Max (V): 4
ID Max (A): 80
PD Max (W): 310
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 95
更多
Ciss Typ (pF): 6400
Qgd Typ @ VGS = 4.5 V (nC): 24
Qrr Typ (nC): 39
Coss Typ (pF): 1123
Crss Typ (pF): 367
Package Type: D2PAK-3 / TO-263-2
MSL Type: 1
MSL Temp (°C): 245
ON Target: Yes
参考价格: $2.9433
FDB035AN06A0-F085
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 60 V、80 A、3.2 mΩ、D2PAKN 沟道 PowerTrench®
状态: 已停产
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: NA
Type: Low-Medium Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 60
RDS(on) Max @ VGS = 10 V (mΩ): 3.5
Vgs (V): 20
Vgs(th) Max (V): 4
ID Max (A): 80
PD Max (W): 310
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 95
更多
Ciss Typ (pF): 6400
Qgd Typ @ VGS = 4.5 V (nC): 24
Qrr Typ (nC): 39
Coss Typ (pF): 1123
Crss Typ (pF): 367
Package Type: D2PAK-3 / TO-263-2
MSL Type: 1
MSL Temp (°C): 245
ON Target: No
参考价格: Price N/A
FDB035N10A
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N 沟道，PowerTrench® MOSFET，100V，214A，3.5mΩ
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: D2PAK
Type: Low-Medium Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 100
RDS(on) Max @ VGS = 10 V (mΩ): 3.5
Vgs (V): ±20
Vgs(th) Max (V): 4
ID Max (A): 214
PD Max (W): 214
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 89
更多
Ciss Typ (pF): 5485
Qgd Typ @ VGS = 4.5 V (nC): 25
Qrr Typ (nC): 129
Coss Typ (pF): 2430
Crss Typ (pF): 210
Package Type: D2PAK-3 / TO-263-2
MSL Type: 1
MSL Temp (°C): 245
ON Target: Yes
参考价格: $2.0615
2N7000-D75Z
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N沟道增强模式场效应晶体管60V，200mA，5Ω
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: TO-92
Type: Small Signal
Gate Level: Logic
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 60
RDS(on) Max @ VGS = 10 V (mΩ): 5000
VGS Max (V): 20
Vgs(th) Max (V): 3
Id Max (A): 0.2
PD Max (W): 0.35
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): 5300
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): -
更多
Ciss Typ (pF): 60
Qgd Typ @ VGS = 4.5 V (nC): -
Qrr Typ (nC): -
Coss Typ (pF): 25
Crss Typ (pF): 5
Package Type: TO-92-3 LF
MSL Type: NA
MSL Temp (°C): 0
ON Target: No
参考价格: $0.1072
2N7000
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N沟道增强模式场效应晶体管60V，200mA，5Ω
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: TO-92
Type: Small Signal
Gate Level: Logic
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 60
RDS(on) Max @ VGS = 10 V (mΩ): 5000
VGS Max (V): 20
Vgs(th) Max (V): 3
Id Max (A): 0.2
PD Max (W): 0.35
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): 5300
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): -
更多
Ciss Typ (pF): 60
Qgd Typ @ VGS = 4.5 V (nC): -
Qrr Typ (nC): -
Coss Typ (pF): 25
Crss Typ (pF): 5
Package Type: TO-92-3
MSL Type: NA
MSL Temp (°C): 0
ON Target: No
参考价格: $0.1257
2N7000-D26Z
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N沟道增强模式场效应晶体管60V，200mA，5Ω
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: TO-92
Type: Small Signal
Gate Level: Logic
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 60
RDS(on) Max @ VGS = 10 V (mΩ): 5000
VGS Max (V): 20
Vgs(th) Max (V): 3
Id Max (A): 0.2
PD Max (W): 0.35
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): 5300
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): -
更多
Ciss Typ (pF): 60
Qgd Typ @ VGS = 4.5 V (nC): -
Qrr Typ (nC): -
Coss Typ (pF): 25
Crss Typ (pF): 5
Package Type: TO-92-3 LF
MSL Type: NA
MSL Temp (°C): 0
ON Target: No
参考价格: $0.1048
2N7000RLRA
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N沟道增强模式场效应晶体管60V，200mA，5Ω
状态: 已停产
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: NA
Type: Small Signal
Gate Level: Logic
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 60
RDS(on) Max @ VGS = 10 V (mΩ): 5000
VGS Max (V): 20
Vgs(th) Max (V): 3
Id Max (A): 0.2
PD Max (W): 0.35
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): 5300
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): -
更多
Ciss Typ (pF): 60
Qgd Typ @ VGS = 4.5 V (nC): -
Qrr Typ (nC): -
Coss Typ (pF): 25
Crss Typ (pF): 5
Package Type: TO-92
MSL Type: NA
MSL Temp (°C): 0
ON Target: No
参考价格: Price N/A