天天芯片 - 物料搜索

IRF9540N

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分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: -100V Single P-Channel Power MOSFET in a TO-220 package

Package: TO-220 Q[gd]: 34.0nC T[j] max: 175.0°C Mounting: THT Polarity: P P[tot] max: 140.0W R[thJC] max: 1.1K/W V[DS] max: -100.0V V[GS] max: 20.0V R[DS (on)](@10V) max: 117.0mΩ V[GS(th)]: -3.0V Q[G](typ @10V): 64.7nC I[D ](@25°C) max: -23.0A Budgetary Price €/1k: 0.51

IRF5210

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分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: -100V Single P-Channel Power MOSFET in a TO-220 package

Mounting: THT Package: TO-220 Polarity: P P[tot] max: 200.0W Q[gd]: 64.7nC R[thJC] max: 0.75K/W T[j] max: 175.0°C V[DS] max: -100.0V V[GS] max: 20.0V R[DS (on)](@10V) max: 60.0mΩ V[GS(th)]: -3.0V Q[G](typ @10V): 120.0nC I[D ](@25°C) max: -40.0A Budgetary Price €/1k: 0.7

IPB110P06LM

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分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: P-channel MOSFETs in normal and logic level, reducing design complexity in medium and low power applications

I[D ](@25°C) max: -100.0A I[D ](@ T[C]=25°C) max: -100.0A I[Dpuls] max: -400.0A Mounting: SMT Operating Temperature max: 175.0°C P[tot] max: 300.0W Package: D2PAK (TO-263) Pin Count: 3.0Pins Polarity: P Q[G](typ @10V): -281.0nC R[DS (on)](@10V) max: 11.0mΩ R[DS (on)](@4.5V) max: 16.0mΩ V[DS] max: -60.0V V[GS(th)]: -1.5V Budgetary Price €/1k: 1.47

SPB80P06PG

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分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: P-channel enhancement mode Field-Effect Transistor (FET), -60V, D2PAK

I[Dpuls] max: -320.0A R[th]: 0.4K/W P[tot] max: 375.0W V[DS] max: -60.0V Package: D2PAK (TO-263) C[iss]: 4026.0pF C[oss]: 1252.0pF I[D ](@25°C) max: -80.0A Q[G](typ @10V): 115.0nC R[DS (on)](@10V) max: 23.0mΩ V[GS(th)]: -3.0V Polarity: P Operating Temperature min: -55.0°C Operating Temperature max: 175.0°C Budgetary Price €/1k: 1.64

SPD18P06PG

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分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: P-Channel Power MOSFET -60 V in DPAK package

I[Dpuls] max: -74.4A R[th]: 1.85K/W P[tot] max: 80.0W V[DS] max: -60.0V Package: DPAK (TO-252) C[iss]: 690.0pF C[oss]: 230.0pF I[D ](@25°C) max: -18.6A Q[G](typ @10V): 22.0nC R[DS (on)](@10V) max: 130.0mΩ V[GS(th)]: -3.0V Polarity: P Operating Temperature min: -55.0°C Operating Temperature max: 175.0°C Budgetary Price €/1k: 0.47

SPD08P06PG

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分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: P-channel enhancement mode Field-Effect Transistor (FET), -60V, DPAK

I[Dpuls] max: -35.52A R[th]: 3.6K/W P[tot] max: 42.0W V[DS] max: -60.0V I[D ] max: -8.83A Package: DPAK (TO-252) C[iss]: 335.0pF C[oss]: 105.0pF R[DS (on)] max: 300.0mΩ R[DS (on)](@10V) max: 300.0mΩ V[GS(th)]: -3.0V Polarity: P Operating Temperature min: -55.0°C Operating Temperature max: 175.0°C Q[G](typ @10V): 8.83nC Budgetary Price €/1k: 0.23

IPD650P06NM

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分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: P-channel MOSFETs in normal and logic level, reducing design complexity in medium and low power applications

I[D ](@25°C) max: -22.0A I[D ](@ T[C]=25°C) max: -22.0A I[Dpuls] max: -88.0A Operating Temperature max: 175.0°C P[tot] max: 83.0W Package: DPAK (TO-252) Pin Count: 3.0Pins Polarity: P Q[G](typ @10V): -39.0nC R[DS (on)](@10V) max: 65.0mΩ V[DS] max: -60.0V V[GS(th)]: -3.0V Budgetary Price €/1k: 0.5

IPD380P06NM

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分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: P-channel MOSFETs in normal and logic level, reducing design complexity in medium and low power applications

I[D ](@25°C) max: -35.0A I[D ](@ T[C]=25°C) max: -35.0A I[Dpuls] max: -140.0A Operating Temperature max: 175.0°C P[tot] max: 125.0W Package: DPAK (TO-252) Polarity: P Q[G](typ @10V): -63.0nC R[DS (on)](@10V) max: 38.0mΩ V[DS] max: -60.0V V[GS(th)]: -3.0V Budgetary Price €/1k: 0.62

IPD900P06NM

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分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: P-channel MOSFETs in normal and logic level, reducing design complexity in medium and low power applications

I[D ](@25°C) max: -16.4A I[D ](@ T[C]=25°C) max: -16.4A I[Dpuls] max: -65.6A Operating Temperature max: 175.0°C P[tot] max: 63.0W Package: DPAK (TO-252) Pin Count: 3.0Pins Polarity: P Q[G](typ @10V): -27.0nC R[DS (on)](@10V) max: 90.0mΩ V[DS] max: -60.0V V[GS(th)]: -3.0V Budgetary Price €/1k: 0.29

SPD09P06PLG

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分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: P-channel enhancement mode Field-Effect Transistor (FET), -60V, DPAK

I[Dpuls] max: -38.8A R[th]: 3.6K/W P[tot] max: 42.0W V[DS] max: -60.0V Package: DPAK (TO-252) C[iss]: 360.0pF C[oss]: 103.0pF I[D ](@25°C) max: -9.7A Q[G](typ @10V): 14.0nC R[DS (on)](@10V) max: 250.0mΩ V[GS(th)]: -1.5V Polarity: P Operating Temperature min: -55.0°C Operating Temperature max: 175.0°C Budgetary Price €/1k: 0.28