IPB019N08N5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: Industry leading power MOSFET technology for telecom and server applications with OptiMOS™ 5 80V in D2PAK 7pin package
IDpuls: NoneA
Mounting: SMD
Ptot: NoneW
Package: D2PAK 7pin (TO-263 7pin)
Pin Count: 7.0Pins
Polarity: N
QG(typ @10V): 99.0nC
VDS: NoneV
RDS (on)(@10V): NonemΩ
ID (@25°C): NoneA
VGS(th): 3.0V
Operating Temperature: None°C
Budgetary Price €/1k: 1.91
IRFS3006-7P
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7-Pin package
Moisture Sensitivity Level: 1
Package: D2PAK 7pin (TO-263 7pin)
Polarity: N
Qgd: 60.0nC
Tj: None°C
VDS: NoneV
Mounting: SMD
Ptot: NoneW
RthJC: NoneK/W
VGS: NoneV
RDS (on)(@10V): NonemΩ
VGS(th): 3.0V
QG(typ @10V): 200.0nC
ID (@25°C): NoneA
Operating Temperature: None°C
Budgetary Price €/1k: 1.56
IRFS3107-7P
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7-Pin package
Moisture Sensitivity Level: 1
Package: D2PAK 7pin (TO-263 7pin)
Polarity: N
Qgd: 57.0nC
Tj: None°C
VGS: NoneV
Mounting: SMD
Ptot: NoneW
RthJC: NoneK/W
VDS: NoneV
RDS (on)(@10V): NonemΩ
VGS(th): 3.0V
QG(typ @10V): 160.0nC
ID (@25°C): NoneA
Operating Temperature: None°C
Budgetary Price €/1k: 1.75
I[Dpuls] max: 720.0A
R[th]: 0.6K/W
P[tot] max: 250.0W
V[DS] max: 60.0V
Q[G](typ @4.5V): 125.0nC
Package: D2PAK 7pin (TO-263 7pin)
Polarity: N
C[iss]: 21000.0pF
C[oss]: 3300.0pF
R[DS (on)](@10V) max: 1.6mΩ
R[DS (on)](@4.5V) max: 2.7mΩ
R[DS (on)](@4.5V LL) max: 2.7mΩ
I[D ](@25°C) max: 180.0A
V[GS(th)]: 1.7V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.22
IRFS7530-7P
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 60V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package
Mounting: SMD
Polarity: N
V[GS] max: 20.0V
Moisture Sensitivity Level: 1
Package: D2PAK 7pin (TO-263 7pin)
P[tot] max: 375.0W
Q[gd]: 73.0nC
R[thJC] max: 0.4K/W
T[j] max: 175.0°C
V[DS] max: 60.0V
R[DS (on)](@10V) max: 1.4mΩ
V[GS(th)]: 2.9V
Q[G](typ @10V): 236.0nC
I[D ](@25°C) max: 240.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.3
IDpuls: NoneA
Rth: 1.5K/W
Ptot: NoneW
VDS: NoneV
QG(typ @10V): 26.0nC
Package: DPAK (TO-252)
Polarity: N
Ciss: 1810.0pF
Coss: 490.0pF
RDS (on)(@10V): NonemΩ
ID (@25°C): NoneA
VGS(th): 2.8V
Operating Temperature: None°C
Budgetary Price €/1k: 0.36
IRLR3105
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 55V Single N-Channel Power MOSFET in a D-Pak package
Moisture Sensitivity Level: 1
Mounting: SMD
Package: DPAK (TO-252)
P[tot] max: 57.0W
Q[gd]: 6.0nC
R[thJC] max: 2.65K/W
V[GS] max: 16.0V
T[j] max: 175.0°C
Polarity: N
V[DS] max: 55.0V
R[DS (on)](@10V) max: 37.0mΩ
R[DS (on)](@4.5V) max: 43.0mΩ
V[GS(th)]: 2.0V
I[D ](@25°C) max: 25.0A
Q[G](typ @4.5V): 13.3nC
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.27
IRFS3006
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Moisture Sensitivity Level: 1
Mounting: SMD
Polarity: N
P[tot] max: 375.0W
R[thJC] max: 0.4K/W
V[DS] max: 60.0V
V[GS] max: 20.0V
Package: D2PAK (TO-263)
Q[gd]: 60.0nC
T[j] max: 175.0°C
R[DS (on)](@10V) max: 2.5mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 200.0nC
I[D ](@25°C) max: 270.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.36
IRF1405S
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Package: D2PAK (TO-263)
Q[gd]: 62.0nC
T[j] max: 175.0°C
Moisture Sensitivity Level: 1
Mounting: SMD
Polarity: N
P[tot] max: 200.0W
R[thJC] max: 0.75K/W
V[DS] max: 55.0V
V[GS] max: 20.0V
R[DS (on)](@10V) max: 5.3mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 170.0nC
Special Features: Wide SOA
I[D ](@25°C) max: 131.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.79
IRFS7530
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Package: D2PAK (TO-263)
Q[gd]: 83.0nC
T[j] max: 175.0°C
Moisture Sensitivity Level: 1
Mounting: SMD
Polarity: N
P[tot] max: 375.0W
R[thJC] max: 0.4K/W
V[DS] max: 60.0V
V[GS] max: 20.0V
R[DS (on)](@10V) max: 2.0mΩ
V[GS(th)]: 2.9V
Q[G](typ @10V): 274.0nC
I[D ](@25°C) max: 195.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.28