IRFR1010Z


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 55V Single N-Channel HEXFET Power MOSFET in a D-Pak package

Moisture Sensitivity Level: 1 Package: DPAK (TO-252) Polarity: N Q[gd]: 23.0nC R[thJC] max: 1.11K/W T[j] max: 175.0°C V[DS] max: 55.0V Mounting: SMD P[tot] max: 140.0W V[GS] max: 20.0V R[DS (on)](@10V) max: 7.5mΩ R[DS (on)](@10V) max: 7.5mΩ V[GS(th)]: 3.0V V[GS(th)]: 3.0V Q[G](typ @10V): 63.0nC Q[G](typ @10V): 63.0nC I[D ](@25°C) max: 91.0A I[D ](@25°C) max: 91.0A Operating Temperature max: 175.0°C Budgetary Price €/1k: 0.5

IRFR2405


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 55V Single N-Channel Power MOSFET in a D-Pak package

Q[gd]: 19.0nC R[thJC] max: 1.4K/W T[j] max: 175.0°C V[DS] max: 55.0V Mounting: SMD Package: DPAK (TO-252) Polarity: N Moisture Sensitivity Level: 1 P[tot] max: 110.0W V[GS] max: 20.0V R[DS (on)](@10V) max: 16.0mΩ R[DS (on)](@10V) max: 16.0mΩ V[GS(th)]: 3.0V V[GS(th)]: 3.0V Q[G](typ @10V): 70.0nC Q[G](typ @10V): 70.0nC I[D ](@25°C) max: 56.0A I[D ](@25°C) max: 56.0A Operating Temperature max: 175.0°C Budgetary Price €/1k: 0.33 Budgetary Price €/1k: 0.33

IRLR3915


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 55V Single N-Channel IR MOSFET in a D-Pak package

I[D ](@25°C) max: 61.0A Operating Temperature max: 175.0°C Budgetary Price €/1k: 0.38 Moisture Sensitivity Level: 1 Package: DPAK (TO-252) Polarity: N Q[gd]: 17.0nC T[j] max: 175.0°C V[GS] max: 16.0V Mounting: SMD P[tot] max: 120.0W R[thJC] max: 1.3K/W V[DS] max: 55.0V R[DS (on)](@10V) max: 14.0mΩ R[DS (on)](@4.5V) max: 17.0mΩ V[GS(th)]: 2.0V Q[G](typ @10V): 61.0nC

IRLR2705


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 55V Single N-Channel IR MOSFET in a D-Pak package

Moisture Sensitivity Level: 1 Package: DPAK (TO-252) Polarity: N Q[gd]: 9.3nC R[thJC] max: 2.7K/W T[j] max: 175.0°C V[GS] max: 16.0V Mounting: SMD P[tot] max: 46.0W V[DS] max: 55.0V R[DS (on)](@10V) max: 40.0mΩ R[DS (on)](@10V) max: 40.0mΩ R[DS (on)](@4.5V) max: 65.0mΩ R[DS (on)](@4.5V) max: 65.0mΩ V[GS(th)]: 1.5V V[GS(th)]: 1.5V I[D ](@25°C) max: 28.0A I[D ](@25°C) max: 28.0A Q[G](typ @4.5V): 16.7nC Q[G](typ @4.5V): 16.7nC
Operating Temperature max: 175.0°C Budgetary Price €/1k: 0.17

IRLR2905


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 55V Single N-Channel IR MOSFET in a D-Pak package

Moisture Sensitivity Level: 1 Package: DPAK (TO-252) Polarity: N Q[gd]: 16.7nC T[j] max: 175.0°C V[GS] max: 16.0V Mounting: SMD P[tot] max: 69.0W R[thJC] max: 1.8K/W V[DS] max: 55.0V R[DS (on)](@10V) max: 27.0mΩ R[DS (on)](@10V) max: 27.0mΩ R[DS (on)](@4.5V) max: 40.0mΩ R[DS (on)](@4.5V) max: 40.0mΩ V[GS(th)]: 1.5V V[GS(th)]: 1.5V I[D ](@25°C) max: 42.0A I[D ](@25°C) max: 42.0A Q[G](typ @4.5V): 23.0nC Q[G](typ @4.5V): 23.0nC
Operating Temperature max: 175.0°C Budgetary Price €/1k: 0.28

IRFR024N


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 55V Single N-Channel IR MOSFET in a D-Pak package

Mounting: SMD P[tot] max: 38.0W V[GS] max: 20.0V Moisture Sensitivity Level: 1 Package: DPAK (TO-252) Polarity: N Q[gd]: 5.1nC R[thJC] max: 3.3K/W T[j] max: 175.0°C V[DS] max: 55.0V R[DS (on)](@10V) max: 75.0mΩ R[DS (on)](@10V) max: 75.0mΩ V[GS(th)]: 3.0V V[GS(th)]: 3.0V Q[G](typ @10V): 13.3nC Q[G](typ @10V): 13.3nC I[D ](@25°C) max: 17.0A I[D ](@25°C) max: 17.0A Operating Temperature max: 175.0°C Budgetary Price €/1k: 0.18

IRFR1205


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 55V Single N-Channel IR MOSFET in a D-Pak package

Moisture Sensitivity Level: 1 Mounting: SMD Polarity: N P[tot] max: 69.0W Q[gd]: 18.0nC R[thJC] max: 1.8K/W V[DS] max: 55.0V V[GS] max: 20.0V Package: DPAK (TO-252) T[j] max: 175.0°C R[DS (on)](@10V) max: 27.0mΩ R[DS (on)](@10V) max: 27.0mΩ V[GS(th)]: 3.0V V[GS(th)]: 3.0V Q[G](typ @10V): 43.3nC Q[G](typ @10V): 43.3nC I[D ](@25°C) max: 44.0A I[D ](@25°C) max: 44.0A Operating Temperature max: 175.0°C Budgetary Price €/1k: 0.24
R[th]: 1.0K/W I[Dpuls] max: 90.0A R[thJC] max: 1.0K/W P[tot] max: 150.0W V[DS] max: 80.0V Q[G](typ @10V): 52.0nC Package: DPAK (TO-252) Polarity: N C[iss]: 3570.0pF C[oss]: 963.0pF R[DS (on)](@10V) max: 5.3mΩ I[D ](@25°C) max: 90.0A V[GS(th)]: 2.8V Operating Temperature max: 175.0°C Budgetary Price €/1k: 0.64
I[Dpuls] max: 180.0A R[th]: 1.9K/W P[tot] max: 79.0W V[DS] max: 80.0V Q[G](typ @10V): 19.0nC Package: DPAK (TO-252) Polarity: N C[iss]: 1300.0pF C[oss]: 353.0pF R[DS (on)](@10V) max: 13.5mΩ I[D ](@25°C) max: 45.0A V[GS(th)]: 2.8V Operating Temperature max: 175.0°C Budgetary Price €/1k: 0.31

IRFR3607


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 75V Single N-Channel HEXFET Power MOSFET in a D-Pak package

Mounting: SMD Package: DPAK (TO-252) P[tot] max: 140.0W Q[gd]: 16.0nC T[j] max: 175.0°C V[GS] max: 20.0V Moisture Sensitivity Level: 1 Polarity: N R[thJC] max: 1.05K/W V[DS] max: 75.0V R[DS (on)](@10V) max: 9.0mΩ V[GS(th)]: 3.0V Q[G](typ @10V): 56.0nC I[D ](@25°C) max: 80.0A Operating Temperature max: 175.0°C Budgetary Price €/1k: 0.45