I[Dpuls] max: 100.0A
R[th]: 1.1K/W
P[tot] max: 136.0W
V[DS] max: 250.0V
Q[G](typ @10V): 22.0nC
Package: D2PAK (TO-263)
Polarity: N
C[iss]: 1770.0pF
C[oss]: 112.0pF
R[DS (on)](@10V) max: 60.0mΩ
I[D ](@25°C) max: 25.0A
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Battery voltage: 144-200 V
Budgetary Price €/1k: 1.11
IPB035N12NM6
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 6 power MOSFET normal level 120 V in D²PAK 3-pin package
I[D ](@25°C) max: 138.0A
Operating Temperature max: 175.0°C
Package: D2PAK (TO-263)
Polarity: N
Q[G](typ @10V): 58.0nC
R[DS (on)](@10V) max: 3.5mΩ
V[DS] max: 120.0V
V[GS(th)]: 3.1V
I[Dpuls] max: 136.0A
R[th]: 1.1K/W
P[tot] max: 136.0W
V[DS] max: 200.0V
Q[G](typ @10V): 22.0nC
Package: D2PAK (TO-263)
Polarity: N
C[iss]: 1770.0pF
C[oss]: 135.0pF
R[DS (on)](@10V) max: 32.0mΩ
I[D ](@25°C) max: 34.0A
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.16
IPB020N10N5LF
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: Combining a low RDS(on) with a wide safe operating area (SOA)
I[Dpuls] max: 480.0A
Mounting: SMD
P[tot] max: 313.0W
Package: D2PAK (TO-263)
Pin Count: 3.0Pins
Polarity: N
Q[G](typ @10V): 195.0nC
Q[gd]: 141.0nC
R[th]: 0.25K/W
R[thJA] max: 62.0K/W
R[thJC] max: 0.4K/W
V[DS] max: 100.0V
R[DS (on)](@10V) max: 2.0mΩ
Special Features: Wide SOA
I[D ](@25°C) max: 120.0A
V[GS(th)]: 3.3V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 2.29
I[Dpuls] max: 480.0A
Mounting: SMD
P[tot] max: 300.0W
Package: D2PAK (TO-263)
Pin Count: 3.0Pins
Polarity: N
Q[G](typ @10V): 80.0nC
Q[gd]: 16.0nC
R[th]: 0.5K/W
R[thJA] max: 62.0K/W
R[thJC] max: 0.5K/W
V[DS] max: 150.0V
C[iss]: 6000.0pF
C[oss]: 1500.0pF
R[DS (on)](@10V) max: 4.8mΩ
I[D ](@25°C) max: 120.0A
V[GS(th)]: 3.8V
Operating Temperature max: 175.0°C
Battery voltage: 72-96 V
Budgetary Price €/1k: 1.92
IPB026N10NF2S
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: StrongIRFET™ 2 single N-channel power MOSFET 100 V in D²PAK package
I[D ](@25°C) max: 162.0A
I[Dpuls] max: 648.0A
Operating Temperature max: 175.0°C
P[tot] max: 250.0W
Package: D2PAK (TO-263)
Polarity: N
Q[G](typ @10V): 103.0nC
R[DS (on)](@10V) max: 2.65mΩ
V[DS] max: 100.0V
V[GS(th)]: 3.0V
Budgetary Price €/1k: 1.52
IPTC025N15NM6
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 6 power MOSFET 150 V normal level in TOLT package for top-side cooling
I[D ](@25°C) max: 264.0A
I[Dpuls] max: 1056.0A
V[DS] max: 150.0V
V[GS(th)]: 3.5V
Polarity: N
Q[G](typ @10V): 105.0nC
R[DS (on)](@10V) max: 2.5mΩ
Operating Temperature max: 175.0°C
P[tot] max: 395.0W
Package: TOLT (HDSOP-16)
IRFS4615
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
R[thJC] max: 1.045K/W
Moisture Sensitivity Level: 1
P[tot] max: 144.0W
Mounting: SMD
Package: D2PAK (TO-263)
Polarity: N
Q[gd]: 9.0nC
T[j] max: 175.0°C
V[DS] max: 150.0V
V[GS] max: 20.0V
R[DS (on)](@10V) max: 42.0mΩ
V[GS(th)]: 4.0V
Q[G](typ @10V): 26.0nC
I[D ](@25°C) max: 33.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.63
IPB048N15N5LF
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: Combining a low RDS(on) with a wide safe operating area (SOA)
I[Dpuls] max: 480.0A
Mounting: SMD
P[tot] max: 313.0W
Package: D2PAK (TO-263)
Pin Count: 3.0Pins
Polarity: N
Q[G](typ @10V): 84.0nC
Q[gd]: 56.0nC
R[th]: 0.25K/W
R[thJA] max: 62.0K/W
R[thJC] max: 0.4K/W
V[DS] max: 150.0V
Special Features: Wide SOA
R[DS (on)](@10V) max: 4.8mΩ
I[D ](@25°C) max: 120.0A
V[GS(th)]: 4.1V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 2.67
IPF021N13NM6
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 6 power MOSFET 135 V Normal Level in D²PAK 7-pin
I[D ](@25°C) max: 250.0A
Operating Temperature max: 175.0°C
Package: D2PAK 7pin (TO-263 7pin)
Polarity: N
Q[G](typ @10V): 160.0nC
R[DS (on)](@10V) max: 2.1mΩ
V[DS] max: 135.0V
V[GS(th)]: 3.0V
Budgetary Price €/1k: 3.03