Mounting: SMT
VDS: NoneV
RDS (on): NonemΩ
RDS (on)(typ): 35.0mΩ
Generation: G5
IGT60R042D1
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管
描述: 600 V CoolGaN™ e-mode power transistor for ultimate efficiency and reliability
Mounting: SMT
QG: 8.8nC
VDS: NoneV
RDS (on)(typ): 35.0mΩ
ID (@ TA=25°C): NoneA
IDpuls(@25°C): NoneA
Generation: ≤ G3
Mounting: SMT
VDS: NoneV
RDS (on)(typ): 45.0mΩ
Generation: G5
RDS (on): NonemΩ
GS-065-018-2-L-TR
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管
描述: CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability
ID (@25°C): NoneA
IDpuls(@25°C): NoneA
Mounting: SMT
QG: 4.0nC
RDS (on)(typ): 78.0mΩ
RDS (on): NonemΩ
VDS: NoneV
Generation: ≤ G3
GS-065-030-6-LL-TR
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管
描述: CoolGaN™ Transistor 700 V G4 for ultimate efficiency and reliability
ID (@25°C): NoneA
IDpuls(@25°C): NoneA
Mounting: SMT
QG: 6.7nC
RDS (on): NonemΩ
RDS (on)(typ): 40.0mΩ
VDS: NoneV
Generation: G4
Mounting: SMT
VDS: NoneV
RDS (on)(typ): 45.0mΩ
Generation: G5
RDS (on): NonemΩ
Mounting: SMT
VDS: NoneV
RDS (on)(typ): 55.0mΩ
Generation: G5
RDS (on): NonemΩ
GS66506T-TR
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管
描述: CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability
ID (@25°C): NoneA
IDpuls(@25°C): NoneA
Mounting: SMT
QG: 4.5nC
RDS (on)(typ): 67.0mΩ
RDS (on): NonemΩ
VDS: NoneV
Generation: ≤ G3
Mounting: SMT
VDS: NoneV
RDS (on)(typ): 45.0mΩ
Generation: G5
RDS (on): NonemΩ
GS66508B-TR
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管
描述: CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability
ID (@25°C): NoneA
IDpuls(@25°C): NoneA
Mounting: SMT
QG: 6.1nC
RDS (on)(typ): 50.0mΩ
RDS (on): NonemΩ
VDS: NoneV
Generation: ≤ G3