IGI60F1414A1L


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管

描述: 600V CoolGaN™ Integrated Power Stage (IPS) to deliver high density, high efficiency solution

Mounting: SMT QG: 2.2nC VDS: NoneV RDS (on)(typ): 140.0mΩ ID (@ TA=25°C): NoneA IDpuls(@25°C): NoneA Generation: ≤ G3
Mounting: SMT VDS: NoneV RDS (on)(typ): 140.0mΩ Generation: G5 RDS (on): NonemΩ

IGT60R190D1


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管

描述: 600 V CoolGaN™ 600 V e-mode power transistor for ultimate efficiency and reliability

Mounting: SMT QG: 3.2nC VDS: NoneV RDS (on)(typ): 140.0mΩ ID (@ TA=25°C): NoneA IDpuls(@25°C): NoneA Generation: ≤ G3

GS-065-011-1-L-TR


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管

描述: CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability

ID (@25°C): NoneA IDpuls(@25°C): NoneA Mounting: SMT QG: 2.2nC RDS (on)(typ): 150.0mΩ RDS (on): NonemΩ VDS: NoneV Generation: ≤ G3

GS-065-011-2-L-TR


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管

描述: CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability

ID (@25°C): NoneA IDpuls(@25°C): NoneA Mounting: SMT QG: 2.2nC RDS (on)(typ): 150.0mΩ RDS (on): NonemΩ VDS: NoneV Generation: ≤ G3

GS-065-008-1-L-TR


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管

描述: CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability

ID (@25°C): NoneA IDpuls(@25°C): NoneA Mounting: SMT QG: 1.5nC RDS (on)(typ): 225.0mΩ RDS (on): NonemΩ VDS: NoneV Generation: ≤ G3
Mounting: SMT VDS: NoneV RDS (on)(typ): 200.0mΩ Generation: G5 RDS (on): NonemΩ

IGLR60R260D1


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管

描述: 600 V CoolGaN™ e-mode power transistor for ultimate efficiency and reliability

Mounting: SMT QG: 1.5nC VDS: NoneV RDS (on)(typ): 200.0mΩ ID (@ TA=25°C): NoneA IDpuls(@25°C): NoneA Generation: ≤ G3

GS-065-008-6-L-TR


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管

描述: CoolGaN™ Transistor 700 V G4 for ultimate efficiency and reliability

Generation: G4 ID (@25°C): NoneA IDpuls(@25°C): NoneA Mounting: SMT QG: 1.6nC RDS (on)(typ): 165.0mΩ RDS (on): NonemΩ VDS: NoneV

GS-065-004-6-L-TR


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管

描述: CoolGaN™ Transistor 700 V G4 for ultimate efficiency and reliability

VDS: NoneV RDS (on)(typ): 315.0mΩ RDS (on): NonemΩ QG: 0.8nC Mounting: SMT ID (@25°C): NoneA IDpuls(@25°C): NoneA Generation: G4