BSL207SP
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: P-channel enhancement mode Field-Effect Transistor (FET), -20 V, TSOP-6
VDS: NoneV
Ptot: NoneW
IDpuls: NoneA
VGS(th): NoneV
RthJA: NoneK/W
Pin Count: 6.0Pins
Package: TSOP-6
Polarity: P
Mounting: SMD
Mode: Enhancement
Ciss: 1007.0pF
Coss: 410.0pF
RDS (on)(@2.5V): NonemΩ
RDS (on)(@4.5V): NonemΩ
RDS (on)(@4.5V LL): NonemΩ
Special Features: Small Power
ID (@25°C): NoneA
QG(typ @4.5V): NonenC
Operating Temperature: None°C
Budgetary Price €/1k: 0.19
IRLL014N
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 55V Single N-Channel IR MOSFET in a SOT-223 package
Moisture Sensitivity Level: 1
Package: SOT-223
Polarity: N
Ptot(@ TA=25°C): NoneW
Qgd: 3.0nC
Tj: None°C
VGS: NoneV
Mounting: SMD
RthJA: NoneK/W
VDS: NoneV
RDS (on)(@10V): NonemΩ
RDS (on)(@4.5V): NonemΩ
VGS(th): 1.5V
QG(typ @10V): 9.5nC
ID (@25°C): NoneA
Special Features: Small Power
Operating Temperature: None°C
Budgetary Price €/1k: 0.17
IRLML6402
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: -20V Single P-Channel Power MOSFET in a Micro 3 package
Mounting: SMD
Package: SOT-23
Ptot(@ TA=25°C): NoneW
Qgd: 2.8nC
Tj: None°C
VGS: NoneV
Moisture Sensitivity Level: 1
Polarity: P
RthJA: NoneK/W
VDS: NoneV
RDS (on)(@4.5V): NonemΩ
VGS(th): -0.55V
ID (@25°C): NoneA
QG(typ @4.5V): 8.0nC
Special Features: Small Power
Budgetary Price €/1k: 0.06
BSS138W
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N-Channel Small Signal MOSFET 60 V in SOT323 package
IDpuls: NoneA
VGS(th): NoneV
RthJA: NoneK/W
Ptot: NoneW
VDS: NoneV
Package: SOT-323
Ciss: 32.0pF
Coss: 7.2pF
RDS (on): NonemΩ
RDS (on)(@4.5V): NonemΩ
RDS (on)(@4.5V LL): NonemΩ
Special Features: Small Signal
Polarity: N
ID (@25°C): NoneA
Operating Temperature: None°C
Operating Temperature: None°C
QG(typ @4.5V): 1.0nC
Budgetary Price €/1k: 0.04
BSL806N
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: Dual N-Channel small-signal MOSFET 20 V for automotive applications in space-saving TSOP-6 package
VDS: NoneV
Ptot: NoneW
IDpuls: NoneA
VGS(th): 0.55V
RthJA: NoneK/W
Pin Count: 6.0Pins
Package: TSOP-6 dual
Mounting: SMD
Mode: Enhancement
Ciss: 370.0pF
Coss: 118.0pF
RDS (on): NonemΩ
RDS (on)(@1.8V): NonemΩ
RDS (on)(@2.5V): NonemΩ
ID (@25°C): NoneA
QG(typ @4.5V): NonenC
Operating Temperature: None°C
Budgetary Price €/1k: 0.12
Polarity: N+N
Special Features: Dual
Operating Temperature: None°C
IRLML2502
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 20V Single N-Channel Power MOSFET in a Micro 3 package
Moisture Sensitivity Level: 1
Mounting: SMD
Polarity: N
Ptot(@ TA=25°C): NoneW
Qgd: 1.7nC
RthJA: NoneK/W
Tj: None°C
VDS: NoneV
VGS: NoneV
Package: SOT-23
RDS (on)(@4.5V): NonemΩ
VGS(th): 0.9V
ID (@25°C): NoneA
QG(typ @4.5V): 8.0nC
Special Features: Small Power
Operating Temperature: None°C
Budgetary Price €/1k: 0.09
IRLML5203
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: -30V Single P-Channel Power MOSFET in a Micro 3 package
Moisture Sensitivity Level: 1
Mounting: SMD
Polarity: P
Ptot(@ TA=25°C): NoneW
Qgd: 1.6nC
RthJA: NoneK/W
Tj: None°C
VDS: NoneV
VGS: NoneV
Package: SOT-23
RDS (on)(@10V): NonemΩ
RDS (on)(@4.5V): NonemΩ
VGS(th): -1.75V
QG(typ @10V): 9.5nC
ID (@25°C): NoneA
Special Features: Small Power
Budgetary Price €/1k: 0.07
IRF5801
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 200V Single N-Channel MOSFET in a TSOP-6 (Micro 6) package
Moisture Sensitivity Level: 1
Polarity: N
Tj: None°C
Mounting: SMD
Ptot(@ TA=25°C): NoneW
Ptot: NoneW
Qgd: 2.2nC
RthJA: NoneK/W
VDS: NoneV
VGS: NoneV
Package: TSOP-6
RDS (on)(@10V): NonemΩ
VGS(th): 4.25V
QG(typ @10V): 3.9nC
ID (@25°C): NoneA
Special Features: Small Power
Operating Temperature: None°C
Budgetary Price €/1k: 0.13
IRLL024N
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 55V Single N-Channel IR MOSFET in a SOT-223 package
Moisture Sensitivity Level: 1
Package: SOT-223
Polarity: N
Ptot(@ TA=25°C): NoneW
Qgd: 5.5nC
Tj: None°C
VGS: NoneV
Mounting: SMD
RthJA: NoneK/W
VDS: NoneV
RDS (on)(@10V): NonemΩ
RDS (on)(@4.5V): NonemΩ
VGS(th): 1.5V
ID (@25°C): NoneA
QG(typ @4.5V): 10.4nC
Special Features: Small Power
Operating Temperature: None°C
Budgetary Price €/1k: 0.21
IRF5803
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: -40V Single P-Channel Power MOSFET in a TSOP-6 (Micro 6) package
Mounting: SMD
Ptot(@ TA=25°C): NoneW
RthJA: NoneK/W
Tj: None°C
VDS: NoneV
VGS: NoneV
Moisture Sensitivity Level: 2
Polarity: P
Qgd: 3.5nC
Package: TSOP-6
RDS (on)(@10V): NonemΩ
RDS (on)(@4.5V): NonemΩ
VGS(th): -2.0V
QG(typ @10V): 25.0nC
ID (@25°C): NoneA
Special Features: Small Power
Budgetary Price €/1k: 0.15