IRFL024Z
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
Qgd: 3.9nC
VGS: NoneV
Package: SOT-223
RthJA: NoneK/W
VDS: NoneV
Moisture Sensitivity Level: 1
Mounting: SMD
Polarity: N
Ptot(@ TA=25°C): NoneW
Tj: None°C
RDS (on)(@10V): NonemΩ
VGS(th): 3.0V
QG(typ @10V): 9.1nC
ID (@25°C): NoneA
Special Features: Small Power
Operating Temperature: None°C
Budgetary Price €/1k: 0.2
IRLMS2002
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 20V Single N-Channel Power MOSFET in a TSOP-6 (Micro 6) package
Moisture Sensitivity Level: 1
Polarity: N
Ptot: NoneW
Qgd: 3.5nC
Tj: None°C
VGS: NoneV
Mounting: SMD
Ptot(@ TA=25°C): NoneW
RthJA: NoneK/W
VDS: NoneV
Package: TSOP-6
RDS (on)(@4.5V): NonemΩ
VGS(th): 0.9V
ID (@25°C): NoneA
QG(typ @4.5V): 15.0nC
Special Features: Small Power
Operating Temperature: None°C
Budgetary Price €/1k: 0.16
IRLML0040
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 40V Single N-Channel StrongIRFET™ Power MOSFET in a SOT-23 package
Moisture Sensitivity Level: 1
Mounting: SMD
Polarity: N
Ptot(@ TA=25°C): NoneW
Qgd: 1.4nC
RthJA: NoneK/W
Tj: None°C
VDS: NoneV
Package: SOT-23
VGS: NoneV
RDS (on)(@10V): NonemΩ
RDS (on)(@4.5V): NonemΩ
VGS(th): 1.8V
ID (@25°C): NoneA
QG(typ @4.5V): 2.6nC
Special Features: Small Power
Operating Temperature: None°C
Budgetary Price €/1k: 0.09
BSD214SN
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N-Channel Small Signal MOSFET 20 V in SOT363 package
IDpuls: NoneA
VGS(th): NoneV
RthJA: NoneK/W
Ptot: NoneW
VDS: NoneV
QG: 0.8nC
Package: SOT-363
Ciss: 107.0pF
Coss: 46.0pF
RDS (on): NonemΩ
RDS (on)(@2.5V): NonemΩ
RDS (on)(@4.5V): NonemΩ
RDS (on)(@4.5V LL): NonemΩ
Special Features: Small Signal
Polarity: N
ID (@25°C): NoneA
Operating Temperature: None°C
Operating Temperature: None°C
Budgetary Price €/1k: 0.05
IRLML2803
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 30V Single N-Channel Power MOSFET in a Micro 3 package
Moisture Sensitivity Level: 1
Package: SOT-23
Polarity: N
Qgd: 1.1nC
RthJA: NoneK/W
Tj: None°C
VGS: NoneV
Mounting: SMD
Ptot(@ TA=25°C): NoneW
VDS: NoneV
RDS (on)(@10V): NonemΩ
RDS (on)(@4.5V): NonemΩ
VGS(th): NoneV
QG(typ @10V): 3.3nC
ID (@25°C): NoneA
Special Features: Small Signal
Operating Temperature: None°C
Budgetary Price €/1k: 0.05
BSP92P
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: P-channel enhancement mode Field-Effect Transistor (FET), -250 V, SOT-223
IDpuls: NoneA
VGS(th): NoneV
Rth: 115.0K/W
Pin Count: 4.0Pins
Ptot: NoneW
VDS: NoneV
Package: SOT-223
Polarity: P
Mounting: SMD
Mode: Enhancement
Ciss: 83.0pF
Coss: 13.0pF
Special Features: Small Power
QG(typ @10V): -4.3nC
RDS (on)(@10V): NonemΩ
ID (@25°C): NoneA
Operating Temperature: None°C
Budgetary Price €/1k: 0.16
IRLML5103
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: -30V Single P-Channel Power MOSFET in a Micro 3 package
Moisture Sensitivity Level: 1
Mounting: SMD
Polarity: P
RthJA: NoneK/W
Tj: None°C
VDS: NoneV
Ptot(@ TA=25°C): NoneW
VGS: NoneV
Package: SOT-23
Qgd: 1.1nC
RDS (on)(@10V): NonemΩ
RDS (on)(@4.5V): NonemΩ
VGS(th): NoneV
QG(typ @10V): 3.4nC
ID (@25°C): NoneA
Special Features: Small Signal
Budgetary Price €/1k: 0.06
IRLML6401
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: -12V Single P-Channel Power MOSFET in a Micro 3 package
Mounting: SMD
Package: SOT-23
Ptot(@ TA=25°C): NoneW
RthJA: NoneK/W
Tj: None°C
VDS: NoneV
Moisture Sensitivity Level: 1
Polarity: P
Qgd: 2.6nC
VGS: NoneV
RDS (on)(@4.5V): NonemΩ
VGS(th): -0.55V
ID (@25°C): NoneA
QG(typ @4.5V): 10.0nC
Special Features: Small Power
Budgetary Price €/1k: 0.06
BSS138N
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N-Channel Small Signal MOSFET 60 V in SOT23 package
IDpuls: NoneA
VGS(th): NoneV
RthJA: NoneK/W
Ptot: NoneW
VDS: NoneV
Package: SOT-23
Ciss: 32.0pF
Coss: 7.2pF
Special Features: Small Signal
QG(typ @10V): 1.0nC
RDS (on)(@10V): NonemΩ
Polarity: N
ID (@25°C): NoneA
Operating Temperature: None°C
Operating Temperature: None°C
Budgetary Price €/1k: 0.03
IRFL4315
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 150V Single N-Channel IR MOSFET in a SOT-223 package
VDS: NoneV
Moisture Sensitivity Level: 1
Polarity: N
Qgd: 6.8nC
Tj: None°C
Mounting: SMD
Package: SOT-223
Ptot(@ TA=25°C): NoneW
RthJA: NoneK/W
VGS: NoneV
RDS (on)(@10V): NonemΩ
VGS(th): 4.0V
QG(typ @10V): 12.0nC
ID (@25°C): NoneA
Special Features: Small Power
Operating Temperature: None°C
Budgetary Price €/1k: 0.27