CSD18541F5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 1.5mm x 0.8mm LGA 封装、具有栅极 ESD 保护的单路、65mΩ、60V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 60
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 65
Rds(on) at VGS=4.5 V (max) (mΩ): 75
VGSTH typ (typ) (V): 1.75
QG (typ) (nC): 11
QGD (typ) (nC): 1.6
QGS (typ) (nC): 1.5
ID - silicon limited at TC=25°C (A): 2.2
ID - package limited (A): 2.2
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 60
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 65
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 75
VGSTH typ (typ) (V): 1.75
QG (typ) (nC): 11
QGD (typ) (nC): 1.6
QGS (typ) (nC): 1.5
ID - silicon limited at TC=25°C (A): 2.2
ID - package limited (A): 2.2
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD15380F3
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 0.6mm x 0.7mm LGA 封装、具有栅极 ESD 保护的单路、1460mΩ、20V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 20
VGS (V): 10
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 1460
VGSTH typ (typ) (V): 1.1
QG (typ) (nC): 0.216
QGD (typ) (nC): 0.027
QGS (typ) (nC): 0.077
ID - silicon limited at TC=25°C (A): 0.5
ID - package limited (A): 0.5
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 20
VGS (V): 10
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 1460
VGSTH typ (typ) (V): 1.1
更多
QG (typ) (nC): 0.216
QGD (typ) (nC): 0.027
QGS (typ) (nC): 0.077
ID - silicon limited at TC=25°C (A): 0.5
ID - package limited (A): 0.5
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD23280F3
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 0.6mm x 0.7mm LGA 封装、具有栅极 ESD 保护的单路、116mΩ、-12V、P 沟道 NexFET™ 功率 MOSFET
VDS (V): -12
VGS (V): -6
Type: P-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 116
Rds(on) at VGS=2.5 V (max) (mΩ): 165
VGSTH typ (typ) (V): -0.65
QG (typ) (nC): 0.95
QGD (typ) (nC): 0.068
QGS (typ) (nC): 0.3
ID - silicon limited at TC=25°C (A): 1.8
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): -12
VGS (V): -6
Type: P-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 116
Rds(on) at VGS=2.5 V (max) (mΩ): 165
更多
VGSTH typ (typ) (V): -0.65
QG (typ) (nC): 0.95
QGD (typ) (nC): 0.068
QGS (typ) (nC): 0.3
ID - silicon limited at TC=25°C (A): 1.8
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD17382F4
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 1mm x 0.6mm LGA 封装、具有栅极 ESD 保护的单路、67mΩ、30V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 10
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 67
VGSTH typ (typ) (V): 0.9
QG (typ) (nC): 2.1
QGD (typ) (nC): 0.63
QGS (typ) (nC): 0.41
ID - silicon limited at TC=25°C (A): 2.3
ID - package limited (A): 2.3
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 10
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 67
VGSTH typ (typ) (V): 0.9
更多
QG (typ) (nC): 2.1
QGD (typ) (nC): 0.63
QGS (typ) (nC): 0.41
ID - silicon limited at TC=25°C (A): 2.3
ID - package limited (A): 2.3
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD25480F3
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 0.6mm x 0.7mm LGA 封装、具有栅极 ESD 保护的单路、159mΩ、-20V、P 沟道 NexFET™ 功率 MOSFET
VDS (V): -20
VGS (V): -12
Type: P-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 159
Rds(on) at VGS=2.5 V (max) (mΩ): 260
VGSTH typ (typ) (V): -0.95
QG (typ) (nC): 0.7
QGD (typ) (nC): 0.1
QGS (typ) (nC): 0.26
ID - silicon limited at TC=25°C (A): 1.7
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): -20
VGS (V): -12
Type: P-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 159
Rds(on) at VGS=2.5 V (max) (mΩ): 260
更多
VGSTH typ (typ) (V): -0.95
QG (typ) (nC): 0.7
QGD (typ) (nC): 0.1
QGS (typ) (nC): 0.26
ID - silicon limited at TC=25°C (A): 1.7
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD18542KTT
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 D2PAK 封装的单路、4mΩ、60V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 60
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 4
Rds(on) at VGS=4.5 V (max) (mΩ): 5.1
VGSTH typ (typ) (V): 1.8
QG (typ) (nC): 44
QGD (typ) (nC): 6.9
QGS (typ) (nC): 13
ID - silicon limited at TC=25°C (A): 170
ID - package limited (A): 200
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 175
VDS (V): 60
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 4
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 5.1
VGSTH typ (typ) (V): 1.8
QG (typ) (nC): 44
QGD (typ) (nC): 6.9
QGS (typ) (nC): 13
ID - silicon limited at TC=25°C (A): 170
ID - package limited (A): 200
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 175
CSD18535KTT
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 D2PAK 封装的单路、2mΩ、60V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 60
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 2
Rds(on) at VGS=4.5 V (max) (mΩ): 2.9
VGSTH typ (typ) (V): 1.9
QG (typ) (nC): 63
QGD (typ) (nC): 10.4
QGS (typ) (nC): 15.7
ID - silicon limited at TC=25°C (A): 279
ID - package limited (A): 200
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 175
VDS (V): 60
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 2
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 2.9
VGSTH typ (typ) (V): 1.9
QG (typ) (nC): 63
QGD (typ) (nC): 10.4
QGS (typ) (nC): 15.7
ID - silicon limited at TC=25°C (A): 279
ID - package limited (A): 200
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 175
CSD18536KTT
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 D2PAK 封装的单路、1.6mΩ、60V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 60
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 1.6
Rds(on) at VGS=4.5 V (max) (mΩ): 2.2
VGSTH typ (typ) (V): 1.8
QG (typ) (nC): 108
QGD (typ) (nC): 14
QGS (typ) (nC): 18
ID - silicon limited at TC=25°C (A): 349
ID - package limited (A): 200
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 175
VDS (V): 60
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 1.6
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 2.2
VGSTH typ (typ) (V): 1.8
QG (typ) (nC): 108
QGD (typ) (nC): 14
QGS (typ) (nC): 18
ID - silicon limited at TC=25°C (A): 349
ID - package limited (A): 200
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 175
CSD87355Q5D
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的 45A、30V、N 沟道同步降压 NexFET™ 功率 MOSFET 电源块
VDS (V): 30
VGS (V): 10
Type: Power block
Configuration: PowerBlock
ID - continuous drain current at TA=25°C (A): 45
Power loss (W): 2.8
Ploss current (A): 25
Features: Power supply
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 10
Type: Power block
Configuration: PowerBlock
ID - continuous drain current at TA=25°C (A): 45
Power loss (W): 2.8
Ploss current (A): 25
Features: Power supply
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD19505KTT
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 D2PAK 封装的单路、3.1mΩ、80V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 80
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 3.1
VGSTH typ (typ) (V): 2.6
QG (typ) (nC): 76
QGD (typ) (nC): 11
QGS (typ) (nC): 25
ID - silicon limited at TC=25°C (A): 212
ID - package limited (A): 200
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 175
VDS (V): 80
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 3.1
VGSTH typ (typ) (V): 2.6
更多
QG (typ) (nC): 76
QGD (typ) (nC): 11
QGS (typ) (nC): 25
ID - silicon limited at TC=25°C (A): 212
ID - package limited (A): 200
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 175