CSD17577Q3A
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 3mm x 3mm SON 封装的单路、6.4mΩ、30V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 4.8
Rds(on) at VGS=4.5 V (max) (mΩ): 6.4
VGSTH typ (typ) (V): 1.4
QG (typ) (nC): 13
QGD (typ) (nC): 2.8
QGS (typ) (nC): 5.1
ID - silicon limited at TC=25°C (A): 83
ID - package limited (A): 35
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 4.8
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 6.4
VGSTH typ (typ) (V): 1.4
QG (typ) (nC): 13
QGD (typ) (nC): 2.8
QGS (typ) (nC): 5.1
ID - silicon limited at TC=25°C (A): 83
ID - package limited (A): 35
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD17577Q5A
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单路、5.8mΩ、30V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 4.2
Rds(on) at VGS=4.5 V (max) (mΩ): 5.8
VGSTH typ (typ) (V): 1.4
QG (typ) (nC): 13
QGD (typ) (nC): 2.8
QGS (typ) (nC): 5.1
ID - silicon limited at TC=25°C (A): 83
ID - package limited (A): 60
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 4.2
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 5.8
VGSTH typ (typ) (V): 1.4
QG (typ) (nC): 13
QGD (typ) (nC): 2.8
QGS (typ) (nC): 5.1
ID - silicon limited at TC=25°C (A): 83
ID - package limited (A): 60
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD75208W1015
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 1mm x 1.5mm WLP 封装、具有栅极 ESD 保护的双通道共源极、108mΩ、-20V、P 沟道 NexFET™ 功率 MOSFET
VDS (V): -20
VGS (V): -6
Type: P-channel
Configuration: Dual Common Source
Rds(on) at VGS=4.5 V (max) (mΩ): 108
Rds(on) at VGS=2.5 V (max) (mΩ): 150
VGSTH typ (typ) (V): -0.8
QG (typ) (nC): 1.9
QGD (typ) (nC): 0.23
QGS (typ) (nC): 0.48
ID - silicon limited at TC=25°C (A): 1.6
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): -20
VGS (V): -6
Type: P-channel
Configuration: Dual Common Source
Rds(on) at VGS=4.5 V (max) (mΩ): 108
Rds(on) at VGS=2.5 V (max) (mΩ): 150
更多
VGSTH typ (typ) (V): -0.8
QG (typ) (nC): 1.9
QGD (typ) (nC): 0.23
QGS (typ) (nC): 0.48
ID - silicon limited at TC=25°C (A): 1.6
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD25304W1015
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 1mm x 1.5mm WLP 封装的单路、32.5mΩ、-20V、P 沟道 NexFET™ 功率 MOSFET
VDS (V): -20
VGS (V): -8
Type: P-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 32.5
Rds(on) at VGS=2.5 V (max) (mΩ): 45.5
VGSTH typ (typ) (V): -0.8
QG (typ) (nC): 3.3
QGD (typ) (nC): 0.5
QGS (typ) (nC): 0.7
ID - silicon limited at TC=25°C (A): 3
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): -20
VGS (V): -8
Type: P-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 32.5
Rds(on) at VGS=2.5 V (max) (mΩ): 45.5
更多
VGSTH typ (typ) (V): -0.8
QG (typ) (nC): 3.3
QGD (typ) (nC): 0.5
QGS (typ) (nC): 0.7
ID - silicon limited at TC=25°C (A): 3
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD18509Q5B
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单路、1.2mΩ、40V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 40
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 1.2
Rds(on) at VGS=4.5 V (max) (mΩ): 1.7
VGSTH typ (typ) (V): 1.9
QG (typ) (nC): 150
QGD (typ) (nC): 17
QGS (typ) (nC): 29
ID - silicon limited at TC=25°C (A): 299
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 40
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 1.2
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 1.7
VGSTH typ (typ) (V): 1.9
QG (typ) (nC): 150
QGD (typ) (nC): 17
QGS (typ) (nC): 29
ID - silicon limited at TC=25°C (A): 299
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD18540Q5B
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单路、2.2mΩ、60V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 60
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 2.2
Rds(on) at VGS=4.5 V (max) (mΩ): 3.3
VGSTH typ (typ) (V): 1.9
QG (typ) (nC): 41
QGD (typ) (nC): 6.7
QGS (typ) (nC): 8.8
ID - silicon limited at TC=25°C (A): 221
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 175
VDS (V): 60
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 2.2
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 3.3
VGSTH typ (typ) (V): 1.9
QG (typ) (nC): 41
QGD (typ) (nC): 6.7
QGS (typ) (nC): 8.8
ID - silicon limited at TC=25°C (A): 221
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 175
CSD25202W15
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 1.5mm x 1.5mm WLP 封装、具有栅极 ESD 保护的单路、26mΩ、-20V、P 沟道 NexFET™ 功率 MOSFET
VDS (V): -20
VGS (V): -6
Type: P-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 26
Rds(on) at VGS=2.5 V (max) (mΩ): 32
VGSTH typ (typ) (V): -0.75
QG (typ) (nC): 5.8
QGD (typ) (nC): 0.8
QGS (typ) (nC): 1.1
ID - silicon limited at TC=25°C (A): 4
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): -20
VGS (V): -6
Type: P-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 26
Rds(on) at VGS=2.5 V (max) (mΩ): 32
更多
VGSTH typ (typ) (V): -0.75
QG (typ) (nC): 5.8
QGD (typ) (nC): 0.8
QGS (typ) (nC): 1.1
ID - silicon limited at TC=25°C (A): 4
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD17573Q5B
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单路、1.45mΩ、30V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 1
Rds(on) at VGS=4.5 V (max) (mΩ): 1.45
VGSTH typ (typ) (V): 1.4
QG (typ) (nC): 49
QGD (typ) (nC): 11.9
QGS (typ) (nC): 17.1
ID - silicon limited at TC=25°C (A): 332
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 1
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 1.45
VGSTH typ (typ) (V): 1.4
QG (typ) (nC): 49
QGD (typ) (nC): 11.9
QGS (typ) (nC): 17.1
ID - silicon limited at TC=25°C (A): 332
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD17576Q5B
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单路、2.9mΩ、30V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 2
Rds(on) at VGS=4.5 V (max) (mΩ): 2.9
VGSTH typ (typ) (V): 1.4
QG (typ) (nC): 25
QGD (typ) (nC): 5.4
QGS (typ) (nC): 8.9
ID - silicon limited at TC=25°C (A): 184
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 2
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 2.9
VGSTH typ (typ) (V): 1.4
QG (typ) (nC): 25
QGD (typ) (nC): 5.4
QGS (typ) (nC): 8.9
ID - silicon limited at TC=25°C (A): 184
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD17575Q3
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 3mm x 3mm SON 封装的单路、3.2mΩ、30V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 2.3
Rds(on) at VGS=4.5 V (max) (mΩ): 3.2
VGSTH typ (typ) (V): 1.4
QG (typ) (nC): 23
QGD (typ) (nC): 5.4
QGS (typ) (nC): 8.5
ID - silicon limited at TC=25°C (A): 182
ID - package limited (A): 60
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 2.3
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 3.2
VGSTH typ (typ) (V): 1.4
QG (typ) (nC): 23
QGD (typ) (nC): 5.4
QGS (typ) (nC): 8.5
ID - silicon limited at TC=25°C (A): 182
ID - package limited (A): 60
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150