CSD17571Q2
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 2mm x 2mm SON 封装的单通道、29mΩ、30V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 24
Rds(on) at VGS=4.5 V (max) (mΩ): 29
VGSTH typ (typ) (V): 1.6
QG (typ) (nC): 2.4
QGD (typ) (nC): 0.6
QGS (typ) (nC): 0.9
ID - silicon limited at TC=25°C (A): 7.6
ID - package limited (A): 22
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 24
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 29
VGSTH typ (typ) (V): 1.6
QG (typ) (nC): 2.4
QGD (typ) (nC): 0.6
QGS (typ) (nC): 0.9
ID - silicon limited at TC=25°C (A): 7.6
ID - package limited (A): 22
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD23381F4
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 0.6mm x 1mm LGA 封装、具有栅极 ESD 保护的单通道、175mΩ、-12V、P 沟道 NexFET™ 功率 MOSFET
VDS (V): -12
VGS (V): -8
Type: P-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 175
Rds(on) at VGS=2.5 V (max) (mΩ): 300
VGSTH typ (typ) (V): -0.95
QG (typ) (nC): 1.14
QGD (typ) (nC): 0.19
QGS (typ) (nC): 0.3
ID - silicon limited at TC=25°C (A): 2.3
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): -12
VGS (V): -8
Type: P-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 175
Rds(on) at VGS=2.5 V (max) (mΩ): 300
更多
VGSTH typ (typ) (V): -0.95
QG (typ) (nC): 1.14
QGD (typ) (nC): 0.19
QGS (typ) (nC): 0.3
ID - silicon limited at TC=25°C (A): 2.3
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD25483F4
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 0.6mm x 1mm LGA 封装、具有栅极 ESD 保护的单通道、245mΩ、-20V、P 沟道 NexFET™ 功率 MOSFET
VDS (V): -20
VGS (V): -12
Type: P-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 245
Rds(on) at VGS=2.5 V (max) (mΩ): 390
VGSTH typ (typ) (V): -0.95
QG (typ) (nC): 0.96
QGD (typ) (nC): 0.16
QGS (typ) (nC): 0.25
ID - silicon limited at TC=25°C (A): 1.6
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): -20
VGS (V): -12
Type: P-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 245
Rds(on) at VGS=2.5 V (max) (mΩ): 390
更多
VGSTH typ (typ) (V): -0.95
QG (typ) (nC): 0.96
QGD (typ) (nC): 0.16
QGS (typ) (nC): 0.25
ID - silicon limited at TC=25°C (A): 1.6
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD13202Q2
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 2mm x 2mm SON 封装的单通道、9.3mΩ、12V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 12
VGS (V): 8
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 9.3
VGSTH typ (typ) (V): 0.8
QG (typ) (nC): 5.1
QGD (typ) (nC): 0.76
QGS (typ) (nC): 0.98
ID - silicon limited at TC=25°C (A): 14.4
ID - package limited (A): 22
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 12
VGS (V): 8
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 9.3
VGSTH typ (typ) (V): 0.8
更多
QG (typ) (nC): 5.1
QGD (typ) (nC): 0.76
QGS (typ) (nC): 0.98
ID - silicon limited at TC=25°C (A): 14.4
ID - package limited (A): 22
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD87384M
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 3.5mm LGA 封装的 30A、30V、N 沟道同步降压 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 10
Type: Power block
Configuration: PowerBlock
ID - continuous drain current at TA=25°C (A): 30
Power loss (W): 3.7
Ploss current (A): 25
Features: Power supply
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 10
Type: Power block
Configuration: PowerBlock
ID - continuous drain current at TA=25°C (A): 30
Power loss (W): 3.7
Ploss current (A): 25
Features: Power supply
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD25481F4
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 0.6mm x 1mm LGA 封装、具有栅极 ESD 保护的单通道、105mΩ、-20V、P 沟道 NexFET™ 功率 MOSFET
VDS (V): -20
VGS (V): -12
Type: P-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 105
Rds(on) at VGS=2.5 V (max) (mΩ): 175
VGSTH typ (typ) (V): -0.95
QG (typ) (nC): 0.913
QGD (typ) (nC): 0.153
QGS (typ) (nC): 0.24
ID - silicon limited at TC=25°C (A): 2.5
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): -20
VGS (V): -12
Type: P-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 105
Rds(on) at VGS=2.5 V (max) (mΩ): 175
更多
VGSTH typ (typ) (V): -0.95
QG (typ) (nC): 0.913
QGD (typ) (nC): 0.153
QGS (typ) (nC): 0.24
ID - silicon limited at TC=25°C (A): 2.5
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD13381F4
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 1mm x 0.6mm LGA 封装、具有栅极 ESD 保护的单通道、180mΩ、12V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 12
VGS (V): 8
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 180
VGSTH typ (typ) (V): 0.85
QG (typ) (nC): 1.06
QGD (typ) (nC): 0.14
QGS (typ) (nC): 0.23
ID - silicon limited at TC=25°C (A): 2.1
ID - package limited (A): 2.1
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 12
VGS (V): 8
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 180
VGSTH typ (typ) (V): 0.85
更多
QG (typ) (nC): 1.06
QGD (typ) (nC): 0.14
QGS (typ) (nC): 0.23
ID - silicon limited at TC=25°C (A): 2.1
ID - package limited (A): 2.1
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD17483F4
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 1mm x 0.6mm LGA 封装、具有栅极 ESD 保护的单通道、260mΩ、30V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 12
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 230
Rds(on) at VGS=4.5 V (max) (mΩ): 260
VGSTH typ (typ) (V): 0.85
QG (typ) (nC): 1.01
QGD (typ) (nC): 0.13
QGS (typ) (nC): 0.22
ID - silicon limited at TC=25°C (A): 1.5
ID - package limited (A): 1.5
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 12
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 230
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 260
VGSTH typ (typ) (V): 0.85
QG (typ) (nC): 1.01
QGD (typ) (nC): 0.13
QGS (typ) (nC): 0.22
ID - silicon limited at TC=25°C (A): 1.5
ID - package limited (A): 1.5
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD19531KCS
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 TO-220 封装的单通道、7.7mΩ、100V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 100
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 7.7
VGSTH typ (typ) (V): 2.7
QG (typ) (nC): 38
QGD (typ) (nC): 7.5
QGS (typ) (nC): 11.9
ID - silicon limited at TC=25°C (A): 110
ID - package limited (A): 100
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 175
VDS (V): 100
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 7.7
VGSTH typ (typ) (V): 2.7
更多
QG (typ) (nC): 38
QGD (typ) (nC): 7.5
QGS (typ) (nC): 11.9
ID - silicon limited at TC=25°C (A): 110
ID - package limited (A): 100
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 175
CSD19531Q5A
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单通道、6.4mΩ、100V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 100
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 6.4
VGSTH typ (typ) (V): 2.7
QG (typ) (nC): 37
QGD (typ) (nC): 6.6
QGS (typ) (nC): 10.5
ID - silicon limited at TC=25°C (A): 110
ID - package limited (A): 100
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 100
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 6.4
VGSTH typ (typ) (V): 2.7
更多
QG (typ) (nC): 37
QGD (typ) (nC): 6.6
QGS (typ) (nC): 10.5
ID - silicon limited at TC=25°C (A): 110
ID - package limited (A): 100
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 150