R[th]: 2.6K/W
P[tot] max: 48.0W
V[DS] max: 30.0V
Q[G](typ @4.5V): 13.0nC
R[thJC] max: 2.6K/W
I[Dpuls] max: 316.0A
Polarity: N
C[iss]: 2100.0pF
C[oss]: 790.0pF
Q[G](typ @10V): 26.0nC
R[DS (on)](@10V) max: 5.0mΩ
R[DS (on)](@4.5V) max: 7.5mΩ
R[DS (on)](@4.5V LL) max: 7.5mΩ
Package: SuperSO8 5x6
I[D ](@25°C) max: 80.0A
V[GS(th)]: 1.69V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.23
I[Dpuls] max: 400.0A
R[th]: 1.1K/W
P[tot] max: 136.0W
V[DS] max: 60.0V
Q[G](typ @10V): 56.0nC
Package: D2PAK (TO-263)
Polarity: N
C[iss]: 4100.0pF
C[oss]: 980.0pF
R[DS (on)](@10V) max: 2.6mΩ
I[D ](@25°C) max: 100.0A
V[GS(th)]: 2.8V
Operating Temperature max: 175.0°C
Battery voltage: 24-36 V
Budgetary Price €/1k: 0.76
IPB016N08NF2S
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: StrongIRFET™ 2 single N-channel power MOSFET 80 V in D²PAK package
I[D ](@25°C) max: 170.0A
I[Dpuls] max: 680.0A
Operating Temperature max: 175.0°C
P[tot] max: 300.0W
Package: D2PAK (TO-263)
Polarity: N
Q[G](typ @10V): 170.0nC
R[DS (on)](@10V) max: 1.65mΩ
V[DS] max: 80.0V
V[GS(th)]: 3.0V
Battery voltage: 36-48 V
Budgetary Price €/1k: 1.66
IRFB7437
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 40V Single N-Channel StrongIRFET™ Power MOSFET in a TO-220 package
Mounting: THT
Package: TO-220
P[tot] max: 230.0W
Q[gd]: 51.0nC
T[j] max: 175.0°C
V[GS] max: 20.0V
Polarity: N
R[thJC] max: 0.65K/W
V[DS] max: 40.0V
R[DS (on)](@10V) max: 2.0mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 150.0nC
I[D ](@25°C) max: 195.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.58
IRFB7446
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 40V Single N-Channel StrongIRFET™ Power MOSFET in a TO-220 package
T[j] max: 175.0°C
Mounting: THT
Package: TO-220
P[tot] max: 99.0W
Q[gd]: 20.0nC
V[DS] max: 40.0V
Polarity: N
R[thJC] max: 1.52K/W
V[GS] max: 20.0V
R[DS (on)](@10V) max: 3.3mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 62.0nC
I[D ](@25°C) max: 120.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.36
IPB013N06NF2S
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: StrongIRFET™ 2 single N-channel power MOSFET 60 V in D²PAK package
I[D ](@25°C) max: 198.0A
I[D ] max: 198.0A
I[Dpuls] max: 792.0A
Mounting: SMD
Operating Temperature max: 175.0°C
P[tot] max: 300.0W
Package: D2PAK (TO-263)
Polarity: N
Q[G]: 203.0nC
Q[G](typ @10V): 203.0nC
R[DS (on)](@10V) max: 1.3mΩ
V[DS] max: 60.0V
V[GS(th)]: 2.8V
Battery voltage: 24-66 V
Budgetary Price €/1k: 1.64
IPB018N06NF2S
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: StrongIRFET™ 2 single N-channel power MOSFET 60 V in D²PAK package
I[D ](@25°C) max: 187.0A
I[D ] max: 187.0A
I[Dpuls] max: 748.0A
Mounting: SMD
Operating Temperature max: 175.0°C
P[tot] max: 188.0W
Package: D2PAK (TO-263)
Polarity: N
Q[G](typ @10V): 108.0nC
Q[G]: 108.0nC
R[DS (on)](@10V) max: 1.8mΩ
R[DS (on)] max: 1.8mΩ
V[DS] max: 60.0V
V[GS(th)]: 2.8V
Battery voltage: 24-66 V
Budgetary Price €/1k: 0.83
I[Dpuls] max: 720.0A
R[th]: 0.5K/W
P[tot] max: 300.0W
V[DS] max: 60.0V
Q[G](typ @10V): 208.0nC
Package: D2PAK 7pin (TO-263 7pin)
Polarity: N
C[iss]: 15000.0pF
C[oss]: 3400.0pF
R[DS (on)](@10V) max: 1.0mΩ
I[D ](@25°C) max: 180.0A
V[GS(th)]: 2.8V
Operating Temperature max: 175.0°C
Battery voltage: 24-36 V
Budgetary Price €/1k: 2.03
IPF010N06NF2S
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: StrongIRFET™ 2 single N-channel power MOSFET 60 V in D²PAK 7-pin package
I[D ](@25°C) max: 293.0A
I[D ] max: 293.0A
I[Dpuls] max: 1172.0A
Mounting: SMD
Operating Temperature max: 175.0°C
P[tot] max: 300.0W
Package: D2PAK 7pin (TO-263 7pin)
Polarity: N
Q[G](typ @10V): 203.0nC
Q[G]: 203.0nC
R[DS (on)](@10V) max: 1.05mΩ
R[DS (on)] max: 1.05mΩ
V[DS] max: 60.0V
V[GS(th)]: 2.8V
Battery voltage: 24-66 V
Budgetary Price €/1k: 1.87
IPF039N08NF2S
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: StrongIRFET™ 2 single N-channel power MOSFET 80 V in D²PAK 7-pin package
I[D ](@25°C) max: 126.0A
I[Dpuls] max: 504.0A
Operating Temperature max: 175.0°C
P[tot] max: 150.0W
Package: D2PAK 7pin (TO-263 7pin)
Polarity: N
Q[G](typ @10V): 54.0nC
R[DS (on)](@10V) max: 3.9mΩ
V[DS] max: 80.0V
V[GS(th)]: 3.0V
Battery voltage: 36-48 V
Budgetary Price €/1k: 1.1