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IPT019N08N5

数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: Industry leading power MOSFET technology for telecom power supply and low voltage drives with OptiMOS™ 5 80V in TO-Leadless (TOLL) package

I[D ](@25°C) max: 247.0A I[D ](@ T[C]=25°C) max: 247.0A I[Dpuls] max: 988.0A P[tot] max: 231.0W Pin Count: 8.0Pins Polarity: N Q[G](typ @10V): 101.0nC R[DS (on)](@10V) max: 1.9mΩ V[DS] max: 80.0V V[GS(th)]: 3.0V Package: TOLL (HSOF-8) Operating Temperature max: 175.0°C Budgetary Price €/1k: 1.48

IPP040N08NF2S

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分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: StrongIRFET™ 2 single N-channel power MOSFET 80 V in TO-220 package

I[D ](@25°C) max: 115.0A I[Dpuls] max: 460.0A Mounting: THT P[tot] max: 150.0W Package: TO-220 Pin Count: 3.0Pins Polarity: N R[DS (on)](@10V) max: 4.0mΩ V[DS] max: 80.0V V[GS(th)]: 3.0V Q[G](typ @10V): 54.0nC Operating Temperature max: 175.0°C Battery voltage: 36-48 V Budgetary Price €/1k: 0.89

BSC028N06NSSC

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分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ 5 60 V power MOSFETs in SuperSO8 DSC package with dual-side cooling for enhanced thermal performance

I[D ](@25°C) max: 137.0A I[Dpuls] max: 548.0A P[tot] max: 100.0W Polarity: N Q[G](typ @10V): 37.0nC R[DS (on)](@10V) max: 2.8mΩ V[DS] max: 60.0V V[GS(th)]: 2.8V Package: SuperSO8 5x6 DSC Operating Temperature max: 175.0°C Special Features: Dual-Side Cooling Budgetary Price €/1k: 0.85

IPT014N08NM5

数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ 5 single N-channel power MOSFET 80 V in a TOLL package

C[iss]: 11000.0pF C[oss]: 1800.0pF I[D ](@25°C) max: 331.0A I[Dpuls] max: 1324.0A P[tot] max: 300.0W Package: TOLL (HSOF-8) Pin Count: 8.0Pins Polarity: N Q[G](typ @10V): 160.0nC R[DS (on)](@10V) max: 1.4mΩ R[th]: 0.5K/W R[thJA] max: 62.0K/W V[DS] max: 80.0V V[GS(th)]: 3.0V Operating Temperature max: 175.0°C Budgetary Price €/1k: 1.55

IPT007N06N

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分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

V[DS] max: 60.0V I[Dpuls] max: 1944.0A Q[G](typ @10V): 216.0nC R[th]: 0.4K/W R[thJC] max: 0.4K/W R[thJA] max: 62.0K/W P[tot] max: 375.0W Polarity: N C[iss]: 16000.0pF C[oss]: 3400.0pF R[DS (on)](@10V) max: 0.75mΩ Package: TOLL (HSOF-8) I[D ](@25°C) max: 486.0A V[GS(th)]: 2.8V Operating Temperature max: 175.0°C Battery voltage: 24-36 V Budgetary Price €/1k: 2.71

IPT008N06NM5LF

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分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ 5 Single N-Channel Linear FET 60V, 0.8mΩ, 450A in TOLL package

I[D ](@25°C) max: 454.0A I[D ] max: 454.0A I[Dpuls] max: 1816.0A Mounting: SMD P[tot] max: 278.0W Pin Count: 8.0Pins Polarity: N Q[G](typ @10V): 185.0nC Q[G]: 185.0nC R[DS (on)](@10V) max: 0.8mΩ R[DS (on)] max: 0.8mΩ V[DS] max: 60.0V V[GS(th)]: 3.1V Package: TOLL (HSOF-8) Special Features: Wide SOA Operating Temperature max: 150.0°C Battery voltage: 24-66 V Budgetary Price €/1k: 2.79

IPT009N06NM5

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分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ 5 N-channel power MOSFET 60 V 0.9 mΩ in TOLL package

I[D ](@25°C) max: 427.0A I[Dpuls] max: 1708.0A Operating Temperature max: 175.0°C Package: TOLL (HSOF-8) Polarity: N Q[G](typ @10V): 171.0nC R[DS (on)](@10V) max: 0.9mΩ V[DS] max: 60.0V V[GS(th)]: 2.8V Budgetary Price €/1k: 2.69

IPP019N06NF2S

数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: StrongIRFET™ 2 single N-channel power MOSFET 60 V in TO-220 package

I[D ](@25°C) max: 185.0A I[D ] max: 185.0A I[Dpuls] max: 740.0A Mounting: THT P[tot] max: 188.0W Package: TO-220 Pin Count: 3.0Pins Polarity: N Q[G](typ @10V): 108.0nC Q[G]: 108.0nC R[DS (on)](@10V) max: 1.9mΩ R[DS (on)] max: 1.9mΩ V[DS] max: 60.0V V[GS(th)]: 2.8V Operating Temperature max: 175.0°C Battery voltage: 24-66 V Budgetary Price €/1k: 0.75

IPT012N08NF2S

数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: StrongIRFET™ 2 single N-channel power MOSFET 80 V in TOLL package

I[D ](@25°C) max: 351.0A I[Dpuls] max: 1404.0A Operating Temperature max: 175.0°C P[tot] max: 300.0W Package: TOLL (HSOF-8) Polarity: N Q[G](typ @10V): 170.0nC R[DS (on)](@10V) max: 1.23mΩ V[DS] max: 80.0V V[GS(th)]: 3.0V Battery voltage: 36-48 V Budgetary Price €/1k: 2.23

IPTC011N08NM5

数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ 5 power MOSFET in TOLT for excellent thermal performance

I[D ](@25°C) max: 408.0A I[Dpuls] max: 1632.0A Operating Temperature max: 175.0°C P[tot] max: 375.0W Package: TOLT (HDSOP-16) Polarity: N Q[G](typ @10V): 178.0nC R[DS (on)](@10V) max: 1.1mΩ V[DS] max: 80.0V V[GS(th)]: 3.0V Battery voltage: 36-48 V Budgetary Price €/1k: 3.28