IPTC014N08NM5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 power MOSFET in TOLT for excellent thermal performance
I[D ](@25°C) max: 330.0A
I[Dpuls] max: 1320.0A
Mounting: SMT
P[tot] max: 300.0W
Package: TOLT (HDSOP-16)
Pin Count: 16.0Pins
Polarity: N
Q[G](typ @10V): 144.0nC
R[DS (on)](@10V) max: 1.4mΩ
V[DS] max: 80.0V
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Battery voltage: 36-48 V
Budgetary Price €/1k: 2.47
IRFB7730
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 75V Single N-Channel StrongIRFET™ Power MOSFET in a TO-220 package
Polarity: N
Mounting: THT
Package: TO-220
Q[gd]: 79.0nC
R[thJC] max: 0.4K/W
V[DS] max: 75.0V
V[GS] max: 20.0V
P[tot] max: 375.0W
T[j] max: 175.0°C
R[DS (on)](@10V) max: 2.6mΩ
V[GS(th)]: 2.9V
Q[G](typ @10V): 271.0nC
I[D ](@25°C) max: 195.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.19
IPTC007N06NM5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 power MOSFET 60 V in TOLT for excellent thermal performance
I[D ](@25°C) max: 454.0A
I[Dpuls] max: 1816.0A
Operating Temperature max: 175.0°C
P[tot] max: 375.0W
Package: TOLT (HDSOP-16)
Polarity: N
Q[G](typ @10V): 209.0nC
R[DS (on)](@10V) max: 0.75mΩ
V[DS] max: 60.0V
V[GS(th)]: 2.8V
Battery voltage: 24-66 V
Budgetary Price €/1k: 2.55
IRFS3306
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Moisture Sensitivity Level: 1
Package: D2PAK (TO-263)
Polarity: N
Q[gd]: 26.0nC
T[j] max: 175.0°C
V[DS] max: 60.0V
Mounting: SMD
P[tot] max: 230.0W
R[thJC] max: 0.65K/W
V[GS] max: 20.0V
R[DS (on)](@10V) max: 4.2mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 85.0nC
I[D ](@25°C) max: 160.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.86
IST011N06NM5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 power MOSFET 60 V, 1.1 mOhm, 399 A, in sTOLL - 7x8 mm2 power MOS package
I[D ](@25°C) max: 399.0A
I[D ] max: 399.0A
I[Dpuls] max: 1596.0A
Mounting: SMT
P[tot] max: 313.0W
Package: sTOLL (HSOF-5)
Pin Count: 5.0Pins
Polarity: N
Q[G](typ @10V): 110.0nC
R[DS (on)](@10V) max: 1.1mΩ
V[DS] max: 60.0V
V[GS(th)] max: 3.3V
Operating Temperature max: 175.0°C
Battery voltage: 24-36 V
Budgetary Price €/1k: 1.81
I[Dpuls] max: 960.0A
Mounting: SMD
P[tot] max: 214.0W
Pin Count: 8.0Pins
Polarity: N
Q[G](typ @10V): 106.0nC
Q[gd]: 19.0nC
R[th]: 0.4K/W
R[thJA] max: 62.0K/W
R[thJC] max: 0.7K/W
V[DS] max: 60.0V
R[DS (on)](@10V) max: 1.2mΩ
Package: TOLL (HSOF-8)
I[D ](@25°C) max: 313.0A
V[GS(th)]: 2.8V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.96
IRLS3036
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Package: D2PAK (TO-263)
V[GS] max: 16.0V
Moisture Sensitivity Level: 1
Mounting: SMD
Polarity: N
P[tot] max: 380.0W
Q[gd]: 51.0nC
R[thJC] max: 0.4K/W
T[j] max: 175.0°C
V[DS] max: 60.0V
R[DS (on)](@10V) max: 2.4mΩ
R[DS (on)](@4.5V) max: 2.8mΩ
V[GS(th)]: 1.75V
I[D ](@25°C) max: 270.0A
Q[G](typ @4.5V): 91.0nC
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.3
IPT013N08NM5LF
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 Single N-Channel Linear FET 80V, 1.3mΩ, 330A in TOLL package
I[D ](@25°C) max: 333.0A
I[D ] max: 333.0A
I[Dpuls] max: 1332.0A
Mounting: SMD
P[tot] max: 278.0W
Package: TOLL (HSOF-8)
Pin Count: 8.0Pins
Polarity: N
Q[G](typ @10V): 158.0nC
Q[G]: 158.0nC
R[DS (on)](@10V) max: 1.3mΩ
R[DS (on)] max: 1.3mΩ
V[DS] max: 80.0V
V[GS(th)]: 3.3V
Special Features: Wide SOA
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 2.55
IPT012N08N5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 power MOSFET 80V in TOLL package
I[Dpuls] max: 1200.0A
P[tot] max: 375.0W
Pin Count: 8.0Pins
Polarity: N
Q[G](typ @10V): 178.0nC
R[th]: 0.4K/W
R[thJA] max: 62.0K/W
R[thJC] max: 0.4K/W
V[DS] max: 80.0V
C[iss]: 13000.0pF
C[oss]: 2000.0pF
R[DS (on)](@10V) max: 1.2mΩ
Package: TOLL (HSOF-8)
I[D ](@25°C) max: 300.0A
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 2.66
IRFS7730
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Mounting: SMD
P[tot] max: 375.0W
R[thJC] max: 0.4K/W
V[GS] max: 20.0V
Moisture Sensitivity Level: 1
Package: D2PAK (TO-263)
Polarity: N
Q[gd]: 79.0nC
T[j] max: 175.0°C
V[DS] max: 75.0V
R[DS (on)](@10V) max: 2.6mΩ
V[GS(th)]: 2.9V
Q[G](typ @10V): 271.0nC
I[D ](@25°C) max: 195.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.18