I[Dpuls] max: 400.0A
R[th]: 0.5K/W
P[tot] max: 300.0W
V[DS] max: 80.0V
Q[G](typ @10V): 155.0nC
Package: TO-220
Polarity: N
C[iss]: 10700.0pF
C[oss]: 2890.0pF
R[DS (on)](@10V) max: 2.8mΩ
I[D ](@25°C) max: 100.0A
V[GS(th)]: 2.8V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.62
I[Dpuls] max: 480.0A
R[th]: 0.8K/W
P[tot] max: 188.0W
V[DS] max: 60.0V
Q[G](typ @10V): 124.0nC
Package: TO-220
Polarity: N
C[iss]: 10000.0pF
C[oss]: 2200.0pF
R[DS (on)](@10V) max: 3.2mΩ
I[D ](@25°C) max: 120.0A
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.65
IRF1010E
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 60V Single N-Channel Power MOSFET in a TO-220 package
T[j] max: 175.0°C
Mounting: THT
Q[gd]: 29.3nC
V[DS] max: 60.0V
Package: TO-220
Polarity: N
P[tot] max: 170.0W
R[thJC] max: 0.9K/W
V[GS] max: 20.0V
R[DS (on)](@10V) max: 12.0mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 86.6nC
I[D ](@25°C) max: 84.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.44
IPP020N08N5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 power MOSFET 80V for telecom applications
R[th]: 0.4K/W
V[DS] max: 80.0V
P[tot] max: 375.0W
I[Dpuls] max: 480.0A
Q[G](typ @10V): 178.0nC
R[thJC] max: 0.4K/W
R[thJA] max: 62.0K/W
Pin Count: 3.0Pins
Package: TO-220
Polarity: N
Mounting: THT
C[iss]: 13000.0pF
C[oss]: 2000.0pF
R[DS (on)](@10V) max: 2.0mΩ
I[D ](@25°C) max: 120.0A
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.98
IRFB3207
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 75V Single N-Channel Power MOSFET in a TO-220 package
Package: TO-220
Polarity: N
Ptot: NoneW
RthJC: NoneK/W
VGS: NoneV
Mounting: THT
Qgd: 68.0nC
Tj: None°C
VDS: NoneV
RDS (on)(@10V): NonemΩ
VGS(th): 3.0V
QG(typ @10V): 180.0nC
ID (@25°C): NoneA
Operating Temperature: None°C
Budgetary Price €/1k: 1.4
IRFB7534
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 60V Single N-Channel StrongIRFET™ Power MOSFET in a TO-220 package
T[j] max: 175.0°C
P[tot] max: 294.0W
V[DS] max: 60.0V
V[GS] max: 20.0V
R[thJC] max: 0.51K/W
Mounting: THT
Package: TO-220
Polarity: N
Q[gd]: 56.0nC
R[DS (on)](@10V) max: 2.4mΩ
V[GS(th)]: 2.9V
Q[G](typ @10V): 186.0nC
I[D ](@25°C) max: 195.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.73
I[Dpuls] max: 400.0A
R[th]: 0.7K/W
P[tot] max: 214.0W
V[DS] max: 80.0V
Q[G](typ @10V): 88.0nC
Package: TO-220
Polarity: N
C[iss]: 6100.0pF
C[oss]: 1640.0pF
R[DS (on)](@10V) max: 3.75mΩ
I[D ](@25°C) max: 100.0A
V[GS(th)]: 2.8V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.85
IRFZ34N
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 55V Single N-Channel Power MOSFET in a TO-220 package
Package: TO-220
Q[gd]: 9.3nC
T[j] max: 175.0°C
V[DS] max: 55.0V
V[GS] max: 20.0V
Mounting: THT
Polarity: N
P[tot] max: 56.0W
R[thJC] max: 2.7K/W
R[DS (on)](@10V) max: 40.0mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 22.7nC
I[D ](@25°C) max: 29.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.22
IPA040N06NM5S
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 power MOSFET 60V in TO-220 FullPAK package (IPA040N06NM5S)
I[D ](@ T[C]=25°C) max: 72.0A
I[D ](@25°C) max: 72.0A
I[Dpuls] max: 288.0A
P[tot] max: 36.0W
Polarity: N
Q[G](typ @10V): 38.0nC
R[DS (on)](@10V) max: 4.0mΩ
V[DS] max: 60.0V
V[GS(th)]: 2.8V
Package: TO-220 FullPAK
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.66
IRFB3006
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 60V Single N-Channel IR MOSFET™ in a TO-220AB package
Package: TO-220
Polarity: N
Q[gd]: 60.0nC
R[thJC] max: 0.4K/W
T[j] max: 175.0°C
V[DS] max: 60.0V
V[GS] max: 20.0V
Mounting: THT
P[tot] max: 375.0W
R[DS (on)](@10V) max: 2.5mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 200.0nC
I[D ](@25°C) max: 270.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.22
Budgetary Price €/1k: 1.22