IPB027N10N5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 100V power MOSFET in D2PAK package with 22% lower RDS(on) for telecom and server power supply applications
I[Dpuls] max: 480.0A
Mounting: SMD
P[tot] max: 250.0W
Package: D2PAK (TO-263)
Pin Count: 3.0Pins
Polarity: N
Q[G](typ @10V): 112.0nC
R[th]: 0.6K/W
R[thJA] max: 62.0K/W
V[DS] max: 100.0V
C[iss]: 7920.0pF
C[oss]: 1210.0pF
R[DS (on)](@10V) max: 2.7mΩ
I[D ](@25°C) max: 166.0A
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.86
IRFS4620
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Moisture Sensitivity Level: 1
Package: D2PAK (TO-263)
Polarity: N
Q[gd]: 7.9nC
R[thJC] max: 1.045K/W
T[j] max: 175.0°C
V[DS] max: 200.0V
V[GS] max: 20.0V
Mounting: SMD
P[tot] max: 144.0W
R[DS (on)](@10V) max: 77.5mΩ
V[GS(th)]: 4.0V
Q[G](typ @10V): 25.0nC
I[D ](@25°C) max: 24.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.64
IPB050N10NF2S
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: StrongIRFET™ 2 single N-channel power MOSFET 100 V in D²PAK package
I[D ](@25°C) max: 103.0A
I[Dpuls] max: 412.0A
Operating Temperature max: 175.0°C
P[tot] max: 150.0W
Package: D2PAK (TO-263)
Polarity: N
Q[G](typ @10V): 51.0nC
R[DS (on)](@10V) max: 5.05mΩ
V[DS] max: 100.0V
V[GS(th)]: 3.0V
Budgetary Price €/1k: 0.56
IPB020N10N5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 100 V power MOSFET in D2PAK package with 22% lower RDS(on) for telecom and server power supply applications
R[th]: 0.4K/W
V[DS] max: 100.0V
I[Dpuls] max: 480.0A
Q[G](typ @10V): 168.0nC
P[tot] max: 375.0W
R[thJC] max: 0.4K/W
R[thJA] max: 62.0K/W
Pin Count: 3.0Pins
Package: D2PAK (TO-263)
Mounting: SMD
Polarity: N
C[iss]: 12000.0pF
C[oss]: 1810.0pF
R[DS (on)](@10V) max: 2.0mΩ
I[D ](@25°C) max: 176.0A
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Battery voltage: 48-72 V
Budgetary Price €/1k: 2.17
IPB033N10N5LF
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: Combining a low RDS(on) with a wide safe operating area (SOA)
I[Dpuls] max: 480.0A
Mounting: SMD
P[tot] max: 179.0W
Package: D2PAK (TO-263)
Pin Count: 3.0Pins
Polarity: N
Q[G](typ @10V): 102.0nC
Q[gd]: 72.0nC
R[th]: 0.45K/W
R[thJA] max: 62.0K/W
R[thJC] max: 0.7K/W
V[DS] max: 100.0V
R[DS (on)](@10V) max: 3.3mΩ
I[D ](@25°C) max: 120.0A
V[GS(th)]: 3.3V
Special Features: Wide SOA
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 1.87
IPP089N15NM6
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 6 power MOSFET 150 V normal level in TO-220 package
I[D ](@25°C) max: 88.0A
I[Dpuls] max: 352.0A
V[DS] max: 150.0V
V[GS(th)]: 3.5V
Package: TO-220
Polarity: N
Q[G](typ @10V): 29.0nC
R[DS (on)](@10V) max: 8.9mΩ
Operating Temperature max: 175.0°C
P[tot] max: 158.0W
I[Dpuls] max: 456.0A
Mounting: SMD
P[tot] max: 214.0W
Package: D2PAK (TO-263)
Pin Count: 3.0Pins
Polarity: N
Q[G](typ @10V): 49.0nC
Q[gd]: 10.0nC
R[th]: 0.7K/W
R[thJA] max: 62.0K/W
R[thJC] max: 0.7K/W
V[DS] max: 150.0V
C[iss]: 3600.0pF
C[oss]: 900.0pF
R[DS (on)](@10V) max: 7.3mΩ
I[D ](@25°C) max: 114.0A
V[GS(th)]: 3.8V
Operating Temperature max: 175.0°C
Battery voltage: 72-96 V
Budgetary Price €/1k: 1.43
I[Dpuls] max: 256.0A
R[th]: 0.5K/W
P[tot] max: 300.0W
V[DS] max: 250.0V
Q[G](typ @10V): 64.0nC
Package: D2PAK (TO-263)
Polarity: N
C[iss]: 5340.0pF
C[oss]: 297.0pF
R[DS (on)](@10V) max: 20.0mΩ
I[D ](@25°C) max: 64.0A
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 2.95
I[Dpuls] max: 100.0A
R[th]: 1.1K/W
P[tot] max: 136.0W
V[DS] max: 250.0V
Q[G](typ @10V): 22.0nC
Package: D2PAK (TO-263)
Polarity: N
C[iss]: 1770.0pF
C[oss]: 112.0pF
R[DS (on)](@10V) max: 60.0mΩ
I[D ](@25°C) max: 25.0A
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Battery voltage: 144-200 V
Budgetary Price €/1k: 1.11
IPB035N12NM6
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 6 power MOSFET normal level 120 V in D²PAK 3-pin package
I[D ](@25°C) max: 138.0A
Operating Temperature max: 175.0°C
Package: D2PAK (TO-263)
Polarity: N
Q[G](typ @10V): 58.0nC
R[DS (on)](@10V) max: 3.5mΩ
V[DS] max: 120.0V
V[GS(th)]: 3.1V