IQE220N15NM5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 low-voltage power MOSFET 150 V in PQFN 3.3x3.3 Source-Down package
I[D ](@25°C) max: 44.0A
I[Dpuls] max: 176.0A
Operating Temperature max: 175.0°C
P[tot] max: 100.0W
Package: PQFN 3.3x3.3 Source-Down
Polarity: N
Q[G](typ @10V): 14.4nC
R[DS (on)](@10V) max: 22.0mΩ
V[DS] max: 150.0V
V[GS(th)]: 3.8V
Budgetary Price €/1k: 0.92
IQD020N10NM5CG
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ power MOSFETs 100 V in PQFN 5x6 mm2 Source-Down package with industry leading RDS(on) .
I[D ](@25°C) max: 273.0A
I[Dpuls] max: 1092.0A
Operating Temperature max: 175.0°C
Package: PQFN 5x6 Source-Down
Polarity: N
Q[G](typ @10V): 107.0nC
R[DS (on)](@10V) max: 2.05mΩ
V[DS] max: 100.0V
V[GS(th)]: 3.0V
Special Features: Center-Gate
Budgetary Price €/1k: 1.95
IQD063N15NM5CG
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ power MOSFETs 150 V in PQFN 5x6 mm2 Source-Down package with industry-leading RDS(on) .
I[D ](@25°C) max: 148.0A
I[Dpuls] max: 592.0A
Operating Temperature max: 150.0°C
Package: PQFN 5x6 Source-Down
Polarity: N
Q[G](typ @10V): 48.0nC
R[DS (on)](@10V) max: 6.32mΩ
V[DS] max: 150.0V
V[GS(th)]: 3.8V
Special Features: Center-Gate
Budgetary Price €/1k: 2.04
I[Dpuls] max: 61.0A
R[th]: 2.5K/W
P[tot] max: 62.5W
V[DS] max: 200.0V
Q[G](typ @10V): 8.7nC
Polarity: N
C[iss]: 690.0pF
C[oss]: 52.0pF
R[DS (on)](@10V) max: 90.0mΩ
Package: PQFN 3.3 x 3.3
I[D ](@25°C) max: 15.2A
V[GS(th)]: 3.0V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.5
ISG0616N10NM5HSC
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 dual n-channel 100 V MOSFETs in scalable power block with dual-side cooling capability
I[D ](@25°C) max: 139.0A
Operating Temperature max: 175.0°C
Package: Power Block 6.3x6
Polarity: N
Q[G](typ @10V): 52.0nC
R[DS (on)](@10V) max: 4.0mΩ
V[DS] max: 100.0V
V[GS(th)]: 3.0V
Special Features: Symmetrical Half-bridge
Budgetary Price €/1k: 2.04
IRF7853
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 100V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 Package
Moisture Sensitivity Level: 1
Mounting: SMD
Polarity: N
P[tot](@ T[A]=25°C) max: 2.5W
R[thJA] max: 50.0K/W
V[DS] max: 100.0V
V[GS] max: 20.0V
Package: SO-8
Q[gd]: 10.0nC
T[j] max: 150.0°C
R[DS (on)](@10V) max: 18.0mΩ
V[GS(th)]: 3.95V
Q[G](typ @10V): 28.0nC
I[D ](@25°C) max: 8.3A
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.45
ISC027N10NM6
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 6 power MOSFET 100 V Normal Level in SuperSO8 package
I[D ](@25°C) max: 192.0A
I[D ] max: 192.0A
I[Dpuls] max: 768.0A
Mounting: SMT
P[tot] max: 217.0W
Pin Count: 8.0Pins
Polarity: N
Q[G]: 58.0nC
Q[G](typ @10V): 58.0nC
R[DS (on)] max: 2.7mΩ
R[DS (on)](@10V) max: 2.7mΩ
V[DS] max: 100.0V
V[GS(th)]: 2.8V
Package: SuperSO8 5x6
Operating Temperature max: 175.0°C
Special Features: Fused leads
Budgetary Price €/1k: 1.49
BSC146N10LS5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 power MOSFETs in logic level provide low RDS(on) in a small package
I[D ](@25°C) max: 44.0A
I[D ](@ T[C]=25°C) max: 44.0A
I[Dpuls] max: 176.0A
P[tot] max: 52.0W
Polarity: N
Q[G](typ @4.5V): 8.0nC
R[DS (on)](@10V) max: 14.6mΩ
R[DS (on)](@4.5V) max: 20.8mΩ
V[DS] max: 100.0V
V[GS(th)]: 1.7V
Package: SuperSO8 5x6
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.43
ISC022N10NM6
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 6 power MOSFET 100 V Normal Level in SuperSO8 package
I[D ](@25°C) max: 230.0A
I[D ] max: 230.0A
I[Dpuls] max: 920.0A
Mounting: SMT
P[tot] max: 254.0W
Package: SuperSO8 5x6
Pin Count: 8.0Pins
Polarity: N
Q[G]: 73.0nC
Q[G](typ @10V): 73.0nC
R[DS (on)] max: 2.24mΩ
R[DS (on)](@10V) max: 2.24mΩ
V[DS] max: 100.0V
V[GS(th)]: 2.8V
Operating Temperature max: 175.0°C
Battery voltage: 48-72 V
Special Features: Fused leads
Budgetary Price €/1k: 1.74
I[Dpuls] max: 100.0A
R[th]: 1.0K/W
P[tot] max: 125.0W
V[DS] max: 250.0V
Q[G](typ @10V): 22.0nC
Polarity: N
C[iss]: 1770.0pF
C[oss]: 112.0pF
R[DS (on)](@10V) max: 60.0mΩ
Package: SuperSO8 5x6
I[D ](@25°C) max: 25.0A
V[GS(th)]: 3.0V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 1.4