IRL100HS121
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: New logic level MOSFETs for low VGS
I[D ](@25°C) max: 11.0A
I[Dpuls] max: 41.0A
Mounting: SMD
P[tot] max: 11.5W
Polarity: N
Q[gd]: 1.6nC
R[th]: 13.0K/W
R[thJA] max: 60.0K/W
R[thJC] max: 13.0K/W
V[DS] max: 100.0V
R[DS (on)](@10V) max: 42.0mΩ
R[DS (on)](@4.5V) max: 59.0mΩ
R[DS (on)](@4.5V LL) max: 59.0mΩ
Q[G](typ @4.5V): 3.7nC
V[GS(th)]: 1.7V
Operating Temperature max: 175.0°C
Package: PQFN 2 x 2 (DFN2020)
Budgetary Price €/1k: 0.22
IRFHM3911
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 100V Single N-Channel IR MOSFET in a PQFN 3.3x3.3 package
Mounting: SMD
Polarity: N
Q[gd]: 5.4nC
T[j] max: 150.0°C
Moisture Sensitivity Level: 1
P[tot](@ T[A]=25°C) max: 2.8W
P[tot] max: 29.0W
R[thJC] max: 4.3K/W
V[DS] max: 100.0V
V[GS] max: 20.0V
R[DS (on)](@10V) max: 115.0mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 17.0nC
I[D ](@25°C) max: 11.0A
Package: PQFN 3.3 x 3.3
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.2
I[Dpuls] max: 28.0A
R[th]: 3.7K/W
P[tot] max: 34.0W
V[DS] max: 200.0V
Q[G](typ @10V): 4.2nC
Polarity: N
C[iss]: 320.0pF
C[oss]: 24.0pF
R[DS (on)](@10V) max: 225.0mΩ
Package: PQFN 3.3 x 3.3
I[D ](@25°C) max: 7.0A
V[GS(th)]: 3.0V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.37
I[Dpuls] max: 72.0A
R[th]: 4.3K/W
P[tot] max: 29.0W
V[DS] max: 100.0V
Q[G](typ @10V): 6.8nC
Polarity: N
C[iss]: 480.0pF
C[oss]: 87.0pF
R[DS (on)](@10V) max: 44.0mΩ
Package: PQFN 3.3 x 3.3
I[D ](@25°C) max: 18.0A
V[GS(th)]: 2.7V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.24
I[Dpuls] max: 128.0A
Mounting: SMD
P[tot] max: 62.5W
Pin Count: 8.0Pins
Polarity: N
Q[gd]: 2.2nC
R[th]: 2.0K/W
R[thJA] max: 60.0K/W
R[thJC] max: 2.0K/W
V[DS] max: 150.0V
C[iss]: 730.0pF
C[oss]: 180.0pF
Package: PQFN 3.3 x 3.3
I[D ](@25°C) max: 32.0A
Q[G](typ @10V): 10.1nC
R[DS (on)](@10V) max: 30.0mΩ
V[GS(th)]: 3.8V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.75
I[Dpuls] max: 148.0A
R[th]: 1.9K/W
P[tot] max: 66.0W
V[DS] max: 120.0V
Q[G](typ @10V): 20.0nC
Polarity: N
C[iss]: 1400.0pF
C[oss]: 170.0pF
R[DS (on)](@10V) max: 24.0mΩ
Package: PQFN 3.3 x 3.3
I[D ](@25°C) max: 37.0A
V[GS(th)]: 3.0V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.5
I[Dpuls] max: 84.0A
R[th]: 2.2K/W
P[tot] max: 57.0W
V[DS] max: 150.0V
Q[G](typ @10V): 8.7nC
Polarity: N
C[iss]: 670.0pF
C[oss]: 80.0pF
R[DS (on)](@10V) max: 52.0mΩ
Package: PQFN 3.3 x 3.3
I[D ](@25°C) max: 21.0A
V[GS(th)]: 3.0V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.45
I[Dpuls] max: 236.0A
R[th]: 1.6K/W
P[tot] max: 94.0W
V[DS] max: 100.0V
Q[G](typ @10V): 26.0nC
Package: DPAK (TO-252)
Polarity: N
C[iss]: 1880.0pF
C[oss]: 330.0pF
R[DS (on)](@10V) max: 12.2mΩ
I[D ](@25°C) max: 59.0A
V[GS(th)]: 2.7V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.5
I[Dpuls] max: 160.0A
R[th]: 2.1K/W
P[tot] max: 63.0W
V[DS] max: 100.0V
Q[G](typ @10V): 19.0nC
Polarity: N
C[iss]: 1300.0pF
C[oss]: 240.0pF
R[DS (on)](@10V) max: 16.0mΩ
Package: PQFN 3.3 x 3.3
I[D ](@25°C) max: 40.0A
V[GS(th)]: 2.8V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.47
I[Dpuls] max: 20.0A
R[th]: 3.7K/W
P[tot] max: 33.8W
V[DS] max: 250.0V
Q[G](typ @10V): 4.2nC
Polarity: N
C[iss]: 320.0pF
C[oss]: 21.0pF
R[DS (on)](@10V) max: 425.0mΩ
Package: PQFN 3.3 x 3.3
I[D ](@25°C) max: 5.0A
V[GS(th)]: 3.0V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.42