BSC035N10NS5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 power MOSFET 100 V in a SuperSO8 5x6 package
I[Dpuls] max: 400.0A
Mounting: SMD
P[tot] max: 156.0W
Pin Count: 8.0Pins
Polarity: N
Q[G](typ @10V): 70.0nC
R[th]: 0.8K/W
R[thJA] max: 50.0K/W
R[thJC] max: 0.8K/W
V[DS] max: 100.0V
C[iss]: 5000.0pF
C[oss]: 770.0pF
R[DS (on)](@10V) max: 3.5mΩ
Package: SuperSO8 5x6
I[D ](@25°C) max: 100.0A
V[GS(th)]: 3.0V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 1.03
IRFL4310
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 100V Single N-Channel IR MOSFET in a SOT-223 package
Moisture Sensitivity Level: 1
Package: SOT-223
Polarity: N
Q[gd]: 7.8nC
T[j] max: 150.0°C
V[DS] max: 100.0V
Mounting: SMD
P[tot](@ T[A]=25°C) max: 2.1W
R[thJA] max: 60.0K/W
V[GS] max: 20.0V
R[DS (on)](@10V) max: 200.0mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 17.0nC
I[D ](@25°C) max: 1.6A
Special Features: Small Power
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.18
I[Dpuls] max: 84.0A
R[th]: 2.2K/W
P[tot] max: 57.0W
V[DS] max: 150.0V
Q[G](typ @10V): 8.7nC
Polarity: N
C[iss]: 670.0pF
C[oss]: 80.0pF
R[DS (on)](@10V) max: 52.0mΩ
Package: SuperSO8 5x6
I[D ](@25°C) max: 21.0A
V[GS(th)]: 3.0V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.37
I[Dpuls] max: 168.0A
R[th]: 2.1K/W
P[tot] max: 60.0W
V[DS] max: 100.0V
Q[G](typ @10V): 19.0nC
Polarity: N
C[iss]: 1300.0pF
C[oss]: 240.0pF
R[DS (on)](@10V) max: 16.0mΩ
Package: SuperSO8 5x6
I[D ](@25°C) max: 42.0A
V[GS(th)]: 2.7V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.41
I[Dpuls] max: 45.0A
R[th]: 2.5K/W
P[tot] max: 50.0W
V[DS] max: 200.0V
Q[G](typ @10V): 6.5nC
Polarity: N
C[iss]: 510.0pF
C[oss]: 39.0pF
R[DS (on)](@10V) max: 125.0mΩ
Package: SuperSO8 5x6
I[D ](@25°C) max: 11.3A
V[GS(th)]: 3.0V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.44
IRFB4019
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 150V Single N-Channel StrongIRFET™ Power MOSFET in a TO-220 package
Polarity: N
Q[gd]: 4.1nC
V[DS] max: 150.0V
V[GS] max: 20.0V
Mounting: THT
Package: TO-220
R[thJC] max: 1.88K/W
P[tot] max: 80.0W
T[j] max: 175.0°C
R[DS (on)](@10V) max: 95.0mΩ
V[GS(th)]: 3.95V
Q[G](typ @10V): 13.0nC
I[D ](@25°C) max: 17.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.43
I[Dpuls] max: 136.0A
R[th]: 1.1K/W
P[tot] max: 136.0W
V[DS] max: 200.0V
Q[G](typ @10V): 22.0nC
Package: TO-220
Polarity: N
C[iss]: 1770.0pF
C[oss]: 135.0pF
R[DS (on)](@10V) max: 32.0mΩ
I[D ](@25°C) max: 34.0A
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.05
IRF530N
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 100V Single N-Channel MOSFET in a TO-220 package
V[DS] max: 100.0V
Polarity: N
R[thJC] max: 1.9K/W
V[GS] max: 20.0V
Mounting: THT
Package: TO-220
P[tot] max: 79.0W
Q[gd]: 4.8nC
T[j] max: 175.0°C
R[DS (on)](@10V) max: 90.0mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 24.7nC
I[D ](@25°C) max: 17.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.26
I[Dpuls] max: 160.0A
R[th]: 1.6K/W
P[tot] max: 78.0W
V[DS] max: 100.0V
Q[G](typ @10V): 13.0nC
Polarity: N
C[iss]: 860.0pF
C[oss]: 280.0pF
R[DS (on)](@10V) max: 25.2mΩ
Package: SuperSO8 5x6
I[D ](@25°C) max: 40.0A
V[GS(th)]: 3.0V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.4
I[Dpuls] max: 360.0A
R[th]: 1.1K/W
P[tot] max: 114.0W
V[DS] max: 100.0V
Q[G](typ @10V): 42.0nC
Polarity: N
C[iss]: 3000.0pF
C[oss]: 520.0pF
R[DS (on)](@10V) max: 7.0mΩ
Package: SuperSO8 5x6
I[D ](@25°C) max: 90.0A
V[GS(th)]: 2.7V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.54