Common-mode voltage (max) (V): 36
Common-mode voltage (min) (V): 0
Input offset (±) (max) (µV): 10
Input offset drift (±) (max) (µV/°C): 0.1
Input offset drift (±) (typ) (µV/°C): 0.02
Voltage gain (V/V): 1
CMRR (min) (dB): 126
Supply voltage (max) (V): 5.5
Supply voltage (min) (V): 2.7
Iq (max) (mA): 0.42
Digital interface: I2C, SMBus
Gain error (%): 0.1
Gain error drift (±) (max) (ppm/°C): 50
Number of channels: 1
Resolution (bps): 16
Power measurement accuracy (%): 0.2
Rating: Catalog
Operating temperature range (°C): -40 to 125
Common-mode voltage (max) (V): 36
Common-mode voltage (min) (V): 0
更多
Input offset (±) (max) (µV): 10
Input offset drift (±) (max) (µV/°C): 0.1
Input offset drift (±) (typ) (µV/°C): 0.02
Voltage gain (V/V): 1
CMRR (min) (dB): 126
Supply voltage (max) (V): 5.5
Supply voltage (min) (V): 2.7
Iq (max) (mA): 0.42
Digital interface: I2C, SMBus
Gain error (%): 0.1
Gain error drift (±) (max) (ppm/°C): 50
Number of channels: 1
Resolution (bps): 16
Power measurement accuracy (%): 0.2
Rating: Catalog
Operating temperature range (°C): -40 to 125
Common-mode voltage (max) (V): 26
Common-mode voltage (min) (V): 0
Input offset (±) (max) (µV): 50, 100
Input offset drift (±) (max) (µV/°C): 0.5
Input offset drift (±) (typ) (µV/°C): 0.16
Voltage gain (V/V): 0.125, 0.25, 0.5, 1
CMRR (min) (dB): 120
Supply voltage (max) (V): 5.5
Supply voltage (min) (V): 3
Iq (max) (mA): 1
Digital interface: I2C, SMBus
Gain error (%): 0.3, 0.5
Gain error drift (±) (max) (ppm/°C): 83, 167
Number of channels: 1
Resolution (bps): 12
Power measurement accuracy (%): 0.8, 1
Rating: Catalog
Operating temperature range (°C): -40 to 125
Common-mode voltage (max) (V): 26
Common-mode voltage (min) (V): 0
更多
Input offset (±) (max) (µV): 50, 100
Input offset drift (±) (max) (µV/°C): 0.5
Input offset drift (±) (typ) (µV/°C): 0.16
Voltage gain (V/V): 0.125, 0.25, 0.5, 1
CMRR (min) (dB): 120
Supply voltage (max) (V): 5.5
Supply voltage (min) (V): 3
Iq (max) (mA): 1
Digital interface: I2C, SMBus
Gain error (%): 0.3, 0.5
Gain error drift (±) (max) (ppm/°C): 83, 167
Number of channels: 1
Resolution (bps): 12
Power measurement accuracy (%): 0.8, 1
Rating: Catalog
Operating temperature range (°C): -40 to 125
Common-mode voltage (max) (V): 26
Common-mode voltage (min) (V): 0
Input offset (±) (max) (µV): 50, 100
Input offset drift (±) (max) (µV/°C): 0.5
Input offset drift (±) (typ) (µV/°C): 0.1
Voltage gain (V/V): 0.125, 0.25, 0.5, 1
CMRR (min) (dB): 100
Supply voltage (max) (V): 5.5
Supply voltage (min) (V): 3
Iq (max) (mA): 1
Digital interface: I2C, SMBus
Gain error (%): 0.3, 0.5
Gain error drift (±) (max) (ppm/°C): 83, 167
Features: Bidirectional, Intergrated Power Monitor, Programmable Gain
Number of channels: 1
Resolution (bps): 12
Power measurement accuracy (%): 0.8, 1
Rating: Catalog
Operating temperature range (°C): -40 to 125
Common-mode voltage (max) (V): 26
更多
Common-mode voltage (min) (V): 0
Input offset (±) (max) (µV): 50, 100
Input offset drift (±) (max) (µV/°C): 0.5
Input offset drift (±) (typ) (µV/°C): 0.1
Voltage gain (V/V): 0.125, 0.25, 0.5, 1
CMRR (min) (dB): 100
Supply voltage (max) (V): 5.5
Supply voltage (min) (V): 3
Iq (max) (mA): 1
Digital interface: I2C, SMBus
Gain error (%): 0.3, 0.5
Gain error drift (±) (max) (ppm/°C): 83, 167
Features: Bidirectional, Intergrated Power Monitor, Programmable Gain
Number of channels: 1
Resolution (bps): 12
Power measurement accuracy (%): 0.8, 1
Rating: Catalog
Operating temperature range (°C): -40 to 125
UART Interfaces: 2.0
ISO UART Interfaces: 2.0
Voltage Class: 75.0V
Isolated Communication Interface: iso UART
Non-isolated Communication Interface: UART
Standby Current: 3 µA
ESD Protection: 4.0kV
Tj: None°C
Classification: NA
TLE9012DQU
数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路
描述: Li-Ion battery monitoring and balancing system IC
Voltage Measurement Channels: 12.0
Temperature Measurement Channels: 5.0
Voltage Class: 75.0V
Cell Voltage: NoneV
Balancing Current: NonemA
Isolated Communication Interface: iso UART
Non-isolated Communication Interface: UART
Standby Current: 2.5 µA
ESD Protection: 4.0kV
Tj: None°C
Classification: ISO 26262-compliant
BSP76
数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路
描述: N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions.
EAS/Avalanche Energy: 150.0mJ
I[D ]: 1.4A
I[D(lim)] min: 5.0A
I[L(LIM)] min: 5.0A
Mounting: SMT
P[tot] max: 3.8W
V[DS] max: 42.0V
Load Current: 1.8A
Control Interface: Discrete
I[L(nom)]: 1.4A
Operating Temperature max: 150.0°C
E[AS](Energy capability): 150.0mJ
t[off](Turn OFF time) max: 100.0µs
t[on](Turn ON time) max: 100.0µs
Family: Classic HITFET™
Classification: -
Channels: 1.0
R[DS (on)](@ Tj = 25°C): 190.0mΩ
R[DS (on)](@ Tj = 150°C) max: 480.0mΩ
Diagnostics: -
更多
Protection strategy: Auto-restart
Nominal Load Current per channel: 1.4A
I[L](Short Circuit Current): 5.0A
Recommended Operating Voltage max: 42.0V
Currently planned availability until at least: 2038
EAS/Avalanche Energy: 2000.0mJ
I[D ]: 2.4A
I[D(lim)] min: 15.0A
Load Current: 2.4A
Mounting: SMT
P[tot] max: 21.0W
V[DS] max: 42.0V
Control Interface: Discrete
I[L(nom)]: 2.4A
Recommended Operating Voltage max: 42.0V
Operating Temperature max: 150.0°C
E[AS](Energy capability): 2000.0mJ
t[off](Turn OFF time) max: 100.0µs
t[on](Turn ON time) max: 100.0µs
Classification: -
Channels: 1.0
R[DS (on)](@ Tj = 25°C): 90.0mΩ
R[DS (on)](@ Tj = 150°C) max: 240.0mΩ
Diagnostics: -
Protection strategy: Latch
更多
Nominal Load Current per channel: 2.4A
I[L](Short Circuit Current): 10.0A
Family: Classic HITFET™ 12V
Currently planned availability until at least: 2038
BSP77E6433
数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路
描述: N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions.
EAS/Avalanche Energy: 250.0mJ
I[D ]: 2.17A
I[D(lim)] min: 10.0A
I[L(LIM)] min: 10.0A
Mounting: SMT
P[tot] max: 3.8W
V[DS] max: 42.0V
Load Current: 2.8A
Control Interface: Discrete
I[L(nom)]: 2.17A
Operating Temperature max: 150.0°C
E[AS](Energy capability): 250.0mJ
t[off](Turn OFF time) max: 100.0µs
t[on](Turn ON time) max: 100.0µs
Classification: -
Channels: 1.0
R[DS (on)](@ Tj = 25°C): 90.0mΩ
R[DS (on)](@ Tj = 150°C) max: 240.0mΩ
Diagnostics: -
Protection strategy: Auto-restart
更多
Nominal Load Current per channel: 2.17A
I[L](Short Circuit Current): 10.0A
Recommended Operating Voltage max: 42.0V
Family: Classic HITFET™ 12V
Currently planned availability until at least: 2038
BSP78
数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路
描述: N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions
EAS/Avalanche Energy: 500.0mJ
I[D ]: 3.0A
I[D(lim)] min: 18.0A
I[L(LIM)] min: 18.0A
Mounting: SMT
P[tot] max: 3.8W
V[DS] max: 42.0V
Load Current: 4.0A
Control Interface: Discrete
I[L(nom)]: 3.0A
Operating Temperature max: 150.0°C
E[AS](Energy capability): 500.0mJ
t[off](Turn OFF time) max: 100.0µs
t[on](Turn ON time) max: 100.0µs
Classification: -
Channels: 1.0
R[DS (on)](@ Tj = 25°C): 35.0mΩ
R[DS (on)](@ Tj = 150°C) max: 90.0mΩ
Diagnostics: -
Protection strategy: Auto-restart
更多
Nominal Load Current per channel: 3.0A
I[L](Short Circuit Current): 18.0A
Recommended Operating Voltage max: 42.0V
Family: Classic HITFET™ 12V
Currently planned availability until at least: 2038
BTS118D
数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路
描述: N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions.
EAS/Avalanche Energy: 2000.0mJ
I[D ]: 2.4A
I[D(lim)] min: 15.0A
I[L(LIM)] min: 15.0A
Mounting: SMT
P[tot] max: 21.0W
V[DS] max: 42.0V
Load Current: 3.2A
Control Interface: Discrete
I[L(nom)]: 2.4A
Operating Temperature max: 150.0°C
E[AS](Energy capability): 2000.0mJ
t[off](Turn OFF time) max: 100.0µs
t[on](Turn ON time) max: 100.0µs
Classification: -
Channels: 1.0
R[DS (on)](@ Tj = 25°C): 90.0mΩ
R[DS (on)](@ Tj = 150°C) max: 240.0mΩ
Diagnostics: -
Protection strategy: Latch
更多
Nominal Load Current per channel: 2.4A
I[L](Short Circuit Current): 15.0A
Recommended Operating Voltage max: 42.0V
Family: Classic HITFET™ 12V
Currently planned availability until at least: 2038