BTS118D

供应商:

描述: N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions.

物料参数

EAS/Avalanche Energy:2000.0mJ
ID:2.4A
ID(lim):NoneA
IL(LIM):NoneA
Mounting:SMT
Ptot:NoneW
VDS:NoneV
Load Current:3.2A
Control Interface:Discrete
IL(nom):2.4A
Operating Temperature:None°C
EAS(Energy capability):2000.0mJ
toff(Turn OFF time):Noneµs
ton(Turn ON time):Noneµs
Family:Classic HITFET™
Classification:-
Channels:1.0
RDS (on)(@ Tj = 25°C):90.0mΩ
RDS (on)(@ Tj = 150°C):NonemΩ
Diagnostics:-
Protection strategy:Latch
Nominal Load Current per channel:2.4A
IL(Short Circuit Current):15.0A
Recommended Operating Voltage:NoneV
价格梯度 价格
1+¥3.6046
包装: 库存:0