Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.5 Rail-to-rail: Out GBW (typ) (MHz): 2.2 Slew rate (typ) (V/µs): 0.9 Vos (offset voltage at 25°C) (max) (mV): 1.25 Iq per channel (typ) (mA): 0.07 Vn at 1 kHz (typ) (nV√Hz): 33 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 1.9 Input bias current (max) (pA): 200 CMRR (typ) (dB): 90 Iout (typ) (A): 0.113 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.2 Input common mode headroom (to positive supply) (typ) (V): -0.5 Output swing headroom (to negative supply) (typ) (V): 0.018 Output swing headroom (to positive supply) (typ) (V): -0.07

3rd harmonic (dBc): 62 Frequency of harmonic distortion measurement (MHz): 20 Radiation, TID (typ) (krad): 300 Radiation, SEL (MeV·cm2/mg): Bipolar Architecture: Current FB Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 10 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 12 GBW (typ) (MHz): 1700 BW at Acl (MHz): 1700 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 3100 Vn at flatband (typ) (nV√Hz): 1.83 Vn at 1 kHz (typ) (nV√Hz): 4.5 Iq per channel (typ) (mA): 12.5 Vos (offset voltage at 25°C) (max) (mV): 4.5 Rail-to-rail: No Rating: Space Operating temperature range (°C): -55 to 125 CMRR (typ) (dB): 48 Input bias current (max) (pA): 15000000 Offset drift (typ) (µV/°C): 13 Iout (typ) (mA): 80 2nd harmonic (dBc): 52 3rd harmonic (dBc): 62 Frequency of harmonic distortion measurement (MHz): 20 Radiation, TID (typ) (krad): 300 Radiation, SEL (MeV·cm2/mg): Bipolar

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 32 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 3 Rail-to-rail: In to V- GBW (typ) (MHz): 0.1 Slew rate (typ) (V/µs): 0.05 Vos (offset voltage at 25°C) (max) (mV): 4 Iq per channel (typ) (mA): 0.02125 Vn at 1 kHz (typ) (nV√Hz): 80 Rating: Catalog Operating temperature range (°C): 0 to 70 Offset drift (typ) (µV/°C): 10 Input bias current (max) (pA): 10000 CMRR (typ) (dB): 90 Iout (typ) (A): 0.004 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): -1.5 Output swing headroom (to negative supply) (typ) (V): 0.7 Output swing headroom (to positive supply) (typ) (V): -1.4

Architecture: FET / CMOS Input, Voltage FB Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 GBW (typ) (MHz): 150 BW at Acl (MHz): 150 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 80 Vn at flatband (typ) (nV√Hz): 3 Vn at 1 kHz (typ) (nV√Hz): 3 Iq per channel (typ) (mA): 9.5 Vos (offset voltage at 25°C) (max) (mV): 5 Rail-to-rail: In to V-, Out Features: Shutdown Rating: Catalog Operating temperature range (°C): -40 to 125 CMRR (typ) (dB): 80 Input bias current (max) (pA): 5 Offset drift (typ) (µV/°C): 2.5 Iout (typ) (mA): 70

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 GBW (typ) (MHz): 150 BW at Acl (MHz): 150 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 80 Vn at flatband (typ) (nV√Hz): 3 Vn at 1 kHz (typ) (nV√Hz): 3 Iq per channel (typ) (mA): 9.5 Vos (offset voltage at 25°C) (max) (mV): 5 Rail-to-rail: In to V-, Out Rating: Catalog Operating temperature range (°C): -40 to 125 CMRR (typ) (dB): 80 Input bias current (max) (pA): 5 Offset drift (typ) (µV/°C): 2.5 Iout (typ) (mA): 70

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 32 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4 Rail-to-rail: No GBW (typ) (MHz): 12 Slew rate (typ) (V/µs): 5 Vos (offset voltage at 25°C) (max) (mV): 1.5 Iq per channel (typ) (mA): 3 Vn at 1 kHz (typ) (nV√Hz): 7 Rating: Catalog Operating temperature range (°C): -40 to 85 Offset drift (typ) (µV/°C): 1.8 Input bias current (max) (pA): 500000 CMRR (typ) (dB): 90 Iout (typ) (A): 0.1 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): 1.5 Input common mode headroom (to positive supply) (typ) (V): -1.5 Output swing headroom (to negative supply) (typ) (V): 1.5 Output swing headroom (to positive supply) (typ) (V): -1.5

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 32 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4 Rail-to-rail: No GBW (typ) (MHz): 12 Slew rate (typ) (V/µs): 5 Vos (offset voltage at 25°C) (max) (mV): 1 Iq per channel (typ) (mA): 3 Vn at 1 kHz (typ) (nV√Hz): 7 Rating: Catalog Operating temperature range (°C): -40 to 85 Offset drift (typ) (µV/°C): 1.8 Input bias current (max) (pA): 500000 CMRR (typ) (dB): 90 Iout (typ) (A): 0.1 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): 1.5 Input common mode headroom (to positive supply) (typ) (V): -1.5 Output swing headroom (to negative supply) (typ) (V): 1.5 Output swing headroom (to positive supply) (typ) (V): -1.5

Output swing headroom (to positive supply) (typ) (V): -0.022 THD + N at 1 kHz (typ) (%): 0.001 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Vos (offset voltage at 25°C) (max) (mV): 0.15 Offset drift (typ) (µV/°C): 1 Input bias current (max) (pA): 1 GBW (typ) (MHz): 17 Features: Shutdown Slew rate (typ) (V/µs): 9.5 Rail-to-rail: In to V-, Out Iq per channel (typ) (mA): 1.15 Vn at 1 kHz (typ) (nV√Hz): 5.8 CMRR (typ) (dB): 100 Rating: Catalog Operating temperature range (°C): -40 to 125 Iout (typ) (A): 0.023 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -1 Output swing headroom (to negative supply) (typ) (V): 0.02 Output swing headroom (to positive supply) (typ) (V): -0.022 THD + N at 1 kHz (typ) (%): 0.001

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 6 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 12 BW at Acl (MHz): 500 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 2200 Vn at flatband (typ) (nV√Hz): 5 Iq per channel (typ) (mA): 12.5 Vos (offset voltage at 25°C) (max) (mV): 15 Features: Integrated Multiplexer, Shutdown Rating: Catalog Operating temperature range (°C): -40 to 85 Input bias current (max) (pA): 8000000 Offset drift (typ) (µV/°C): 30 Iout (typ) (mA): 80 2nd harmonic (dBc): -68 3rd harmonic (dBc): -84 Frequency of harmonic distortion measurement (MHz): 5

3rd harmonic (dBc): 57 Frequency of harmonic distortion measurement (MHz): 5 Architecture: Fixed Gain/Buffer Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.8 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 11 GBW (typ) (MHz): 250 BW at Acl (MHz): 250 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 300 Vn at flatband (typ) (nV√Hz): 9.3 Vn at 1 kHz (typ) (nV√Hz): 9.2 Iq per channel (typ) (mA): 4.25 Vos (offset voltage at 25°C) (max) (mV): 7.5 Rail-to-rail: In to V-, Out Rating: Catalog Operating temperature range (°C): -40 to 85 CMRR (typ) (dB): 72 Input bias current (max) (pA): 10000000 Offset drift (typ) (µV/°C): 27 Iout (typ) (mA): 75 2nd harmonic (dBc): 64 3rd harmonic (dBc): 57 Frequency of harmonic distortion measurement (MHz): 5