2nd harmonic (dBc): 92 3rd harmonic (dBc): 96 Frequency of harmonic distortion measurement (MHz): 1 Architecture: Voltage FB Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 15 GBW (typ) (MHz): 120 BW at Acl (MHz): 230 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 990 Vn at flatband (typ) (nV√Hz): 13 Vn at 1 kHz (typ) (nV√Hz): 13 Iq per channel (typ) (mA): 14 Vos (offset voltage at 25°C) (max) (mV): 10 Rail-to-rail: No Features: Shutdown Rating: Catalog Operating temperature range (°C): -40 to 85 CMRR (typ) (dB): 94 Input bias current (max) (pA): 3000000 Offset drift (typ) (µV/°C): 20 Iout (typ) (mA): 100 2nd harmonic (dBc): 92 3rd harmonic (dBc): 96 Frequency of harmonic distortion measurement (MHz): 1

3rd harmonic (dBc): 97 Frequency of harmonic distortion measurement (MHz): 5 Architecture: Voltage FB Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 7 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 12 GBW (typ) (MHz): 200 BW at Acl (MHz): 350 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 400 Vn at flatband (typ) (nV√Hz): 2.7 Vn at 1 kHz (typ) (nV√Hz): 2.6 Iq per channel (typ) (mA): 20.2 Vos (offset voltage at 25°C) (max) (mV): 1.2 Rail-to-rail: No Rating: Catalog Operating temperature range (°C): -40 to 85 CMRR (typ) (dB): 95 Input bias current (max) (pA): 35000000 Offset drift (typ) (µV/°C): 4 Iout (typ) (mA): 100 2nd harmonic (dBc): 80 3rd harmonic (dBc): 97 Frequency of harmonic distortion measurement (MHz): 5

2nd harmonic (dBc): 76 3rd harmonic (dBc): 102 Frequency of harmonic distortion measurement (MHz): 5 Architecture: Voltage FB Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 8 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 12 GBW (typ) (MHz): 800 BW at Acl (MHz): 500 Acl, min spec gain (V/V): 3 Slew rate (typ) (V/µs): 1000 Vn at flatband (typ) (nV√Hz): 2 Vn at 1 kHz (typ) (nV√Hz): 2 Iq per channel (typ) (mA): 20.2 Vos (offset voltage at 25°C) (max) (mV): 1.2 Rail-to-rail: No Features: Decompensated Rating: Catalog Operating temperature range (°C): -40 to 85 CMRR (typ) (dB): 95 Input bias current (max) (pA): 35000000 Offset drift (typ) (µV/°C): 4 Iout (typ) (mA): 100 2nd harmonic (dBc): 76 3rd harmonic (dBc): 102 Frequency of harmonic distortion measurement (MHz): 5

2nd harmonic (dBc): 66 3rd harmonic (dBc): 81 Frequency of harmonic distortion measurement (MHz): 70 Architecture: Fixed Gain/Buffer Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 3 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5 GBW (typ) (MHz): 1200 BW at Acl (MHz): 2400 Acl, min spec gain (V/V): 5 Slew rate (typ) (V/µs): 5500 Vn at flatband (typ) (nV√Hz): 2.8 Vn at 1 kHz (typ) (nV√Hz): 20 Iq per channel (typ) (mA): 37 Vos (offset voltage at 25°C) (max) (mV): 4.25 Rail-to-rail: No Features: Shutdown Rating: Catalog Operating temperature range (°C): -40 to 85 CMRR (typ) (dB): 60 Input bias current (max) (pA): 10000000 Offset drift (typ) (µV/°C): 20 Iout (typ) (mA): 180 2nd harmonic (dBc): 66 3rd harmonic (dBc): 81 Frequency of harmonic distortion measurement (MHz): 70

THD + N at 1 kHz (typ) (%): 0.007 Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Vos (offset voltage at 25°C) (max) (mV): 1 Offset drift (typ) (µV/°C): 0.35 Input bias current (max) (pA): 100 GBW (typ) (MHz): 3.5 Slew rate (typ) (V/µs): 1.4 Rail-to-rail: In to V-, Out Iq per channel (typ) (mA): 0.6 Vn at 1 kHz (typ) (nV√Hz): 7.5 CMRR (typ) (dB): 90 Rating: Catalog Operating temperature range (°C): -40 to 125 Iout (typ) (A): 0.066 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): -0.9 Output swing headroom (to negative supply) (typ) (V): 0.035 Output swing headroom (to positive supply) (typ) (V): -0.03 THD + N at 1 kHz (typ) (%): 0.007

2nd harmonic (dBc): 58 3rd harmonic (dBc): 68 Frequency of harmonic distortion measurement (MHz): 5 Architecture: Current FB Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 5 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 12 GBW (typ) (MHz): 145 BW at Acl (MHz): 145 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 210 Vn at flatband (typ) (nV√Hz): 4.4 Vn at 1 kHz (typ) (nV√Hz): 4.4 Iq per channel (typ) (mA): 0.79 Vos (offset voltage at 25°C) (max) (mV): 3.5 Rail-to-rail: No Features: Shutdown Rating: Catalog Operating temperature range (°C): -40 to 85 CMRR (typ) (dB): 56 Input bias current (max) (pA): 4000000 Offset drift (typ) (µV/°C): 12 Iout (typ) (mA): 110 2nd harmonic (dBc): 58 3rd harmonic (dBc): 68 Frequency of harmonic distortion measurement (MHz): 5

Output swing headroom (to positive supply) (typ) (V): -0.01 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Rail-to-rail: In, Out GBW (typ) (MHz): 7 Slew rate (typ) (V/µs): 5 Vos (offset voltage at 25°C) (max) (mV): 2.5 Iq per channel (typ) (mA): 0.65 Vn at 1 kHz (typ) (nV√Hz): 17 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 3 Features: Shutdown, Small Size, Zero Crossover Input bias current (max) (pA): 10 CMRR (typ) (dB): 90 Iout (typ) (A): 0.045 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.01

Output swing headroom (to positive supply) (typ) (V): -0.01 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Rail-to-rail: In, Out GBW (typ) (MHz): 7 Slew rate (typ) (V/µs): 5 Vos (offset voltage at 25°C) (max) (mV): 2.5 Iq per channel (typ) (mA): 0.65 Vn at 1 kHz (typ) (nV√Hz): 17 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 3 Features: Zero Crossover Input bias current (max) (pA): 10 CMRR (typ) (dB): 90 Iout (typ) (A): 0.045 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.01

Output swing headroom (to positive supply) (typ) (V): -0.01 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Rail-to-rail: In, Out GBW (typ) (MHz): 7 Slew rate (typ) (V/µs): 5 Vos (offset voltage at 25°C) (max) (mV): 2.5 Iq per channel (typ) (mA): 0.65 Vn at 1 kHz (typ) (nV√Hz): 17 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 3 Features: Shutdown, Zero Crossover Input bias current (max) (pA): 10 CMRR (typ) (dB): 90 Iout (typ) (A): 0.045 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.01

Output swing headroom (to positive supply) (typ) (V): -0.01 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Rail-to-rail: In, Out GBW (typ) (MHz): 7 Slew rate (typ) (V/µs): 5 Vos (offset voltage at 25°C) (max) (mV): 2.5 Iq per channel (typ) (mA): 0.65 Vn at 1 kHz (typ) (nV√Hz): 17 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 3 Features: Zero Crossover Input bias current (max) (pA): 10 CMRR (typ) (dB): 90 Iout (typ) (A): 0.045 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.01