3rd harmonic (dBc): 83 Frequency of harmonic distortion measurement (MHz): 1 Architecture: FET / CMOS Input, Voltage FB Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.5 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 GBW (typ) (MHz): 100 BW at Acl (MHz): 250 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 150 Vn at flatband (typ) (nV√Hz): 6.5 Vn at 1 kHz (typ) (nV√Hz): 6.5 Iq per channel (typ) (mA): 4.9 Vos (offset voltage at 25°C) (max) (mV): 8 Rail-to-rail: In, Out Rating: Catalog Operating temperature range (°C): -40 to 125 CMRR (typ) (dB): 80 Input bias current (max) (pA): 50 Offset drift (typ) (µV/°C): 4 Iout (typ) (mA): 100 2nd harmonic (dBc): 75 3rd harmonic (dBc): 83 Frequency of harmonic distortion measurement (MHz): 1

2nd harmonic (dBc): 65 3rd harmonic (dBc): 62 Frequency of harmonic distortion measurement (MHz): 5 Architecture: Voltage FB Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 3 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 12 GBW (typ) (MHz): 86 BW at Acl (MHz): 228 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 200 Vn at flatband (typ) (nV√Hz): 16 Vn at 1 kHz (typ) (nV√Hz): 16 Iq per channel (typ) (mA): 4.18 Vos (offset voltage at 25°C) (max) (mV): 5 Rail-to-rail: In to V-, Out Features: Shutdown Rating: Catalog Operating temperature range (°C): -40 to 85 CMRR (typ) (dB): 95 Input bias current (max) (pA): 2600000 Offset drift (typ) (µV/°C): 8 Iout (typ) (mA): 168 2nd harmonic (dBc): 65 3rd harmonic (dBc): 62 Frequency of harmonic distortion measurement (MHz): 5

2nd harmonic (dBc): 70 3rd harmonic (dBc): 74 Frequency of harmonic distortion measurement (MHz): 5 Architecture: Current FB Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 12 GBW (typ) (MHz): 280 BW at Acl (MHz): 280 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 2100 Vn at flatband (typ) (nV√Hz): 1.7 Vn at 1 kHz (typ) (nV√Hz): 1.7 Iq per channel (typ) (mA): 5.1 Vos (offset voltage at 25°C) (max) (mV): 3 Rail-to-rail: No Features: Shutdown Rating: Catalog Operating temperature range (°C): -40 to 85 CMRR (typ) (dB): 56 Input bias current (max) (pA): 35000000 Offset drift (typ) (µV/°C): 20 Iout (typ) (mA): 190 2nd harmonic (dBc): 70 3rd harmonic (dBc): 74 Frequency of harmonic distortion measurement (MHz): 5

2nd harmonic (dBc): 70 3rd harmonic (dBc): 74 Frequency of harmonic distortion measurement (MHz): 5 Architecture: Current FB Number of channels: 3 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 12 GBW (typ) (MHz): 280 BW at Acl (MHz): 280 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 2100 Vn at flatband (typ) (nV√Hz): 1.7 Vn at 1 kHz (typ) (nV√Hz): 1.7 Iq per channel (typ) (mA): 5.1 Vos (offset voltage at 25°C) (max) (mV): 3 Rail-to-rail: No Features: Shutdown Rating: Catalog Operating temperature range (°C): -40 to 85 CMRR (typ) (dB): 56 Input bias current (max) (pA): 35000000 Offset drift (typ) (µV/°C): 20 Iout (typ) (mA): 190 2nd harmonic (dBc): 70 3rd harmonic (dBc): 74 Frequency of harmonic distortion measurement (MHz): 5

3rd harmonic (dBc): 81 Frequency of harmonic distortion measurement (MHz): 5 Architecture: FET / CMOS Input, Voltage FB Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 8 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 12 GBW (typ) (MHz): 230 BW at Acl (MHz): 500 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 290 Vn at flatband (typ) (nV√Hz): 7 Vn at 1 kHz (typ) (nV√Hz): 10 Iq per channel (typ) (mA): 14 Vos (offset voltage at 25°C) (max) (mV): 0.6 Rail-to-rail: No Rating: Catalog Operating temperature range (°C): -40 to 85 CMRR (typ) (dB): 86 Input bias current (max) (pA): 5 Offset drift (typ) (µV/°C): 2 Iout (typ) (mA): 70 2nd harmonic (dBc): 71 3rd harmonic (dBc): 81 Frequency of harmonic distortion measurement (MHz): 5

2nd harmonic (dBc): 74 3rd harmonic (dBc): 106 Frequency of harmonic distortion measurement (MHz): 5 Architecture: FET / CMOS Input, Voltage FB Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 8 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 12 GBW (typ) (MHz): 1600 BW at Acl (MHz): 350 Acl, min spec gain (V/V): 7 Slew rate (typ) (V/µs): 700 Vn at flatband (typ) (nV√Hz): 4.8 Vn at 1 kHz (typ) (nV√Hz): 7 Iq per channel (typ) (mA): 14 Vos (offset voltage at 25°C) (max) (mV): 1.8 Rail-to-rail: No Features: Decompensated Rating: Catalog Operating temperature range (°C): -40 to 85 CMRR (typ) (dB): 89 Input bias current (max) (pA): 20 Offset drift (typ) (µV/°C): 2 Iout (typ) (mA): 70 2nd harmonic (dBc): 74 3rd harmonic (dBc): 106 Frequency of harmonic distortion measurement (MHz): 5

2nd harmonic (dBc): 68 3rd harmonic (dBc): 70 Frequency of harmonic distortion measurement (MHz): 5 Architecture: Voltage FB Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 5 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 12 GBW (typ) (MHz): 500 BW at Acl (MHz): 500 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 1800 Vn at flatband (typ) (nV√Hz): 5.5 Vn at 1 kHz (typ) (nV√Hz): 5.5 Iq per channel (typ) (mA): 5.5 Vos (offset voltage at 25°C) (max) (mV): 4 Rail-to-rail: No Features: Shutdown Rating: Catalog Operating temperature range (°C): -40 to 85 CMRR (typ) (dB): 65 Input bias current (max) (pA): 10000000 Offset drift (typ) (µV/°C): 10 Iout (typ) (mA): 190 2nd harmonic (dBc): 68 3rd harmonic (dBc): 70 Frequency of harmonic distortion measurement (MHz): 5

2nd harmonic (dBc): 70 3rd harmonic (dBc): 74 Frequency of harmonic distortion measurement (MHz): 5 Architecture: Current FB Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 12 GBW (typ) (MHz): 280 BW at Acl (MHz): 280 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 2100 Vn at flatband (typ) (nV√Hz): 1.7 Vn at 1 kHz (typ) (nV√Hz): 1.7 Iq per channel (typ) (mA): 5.1 Vos (offset voltage at 25°C) (max) (mV): 2.5 Rail-to-rail: No Features: Shutdown Rating: Catalog Operating temperature range (°C): -40 to 85 CMRR (typ) (dB): 56 Input bias current (max) (pA): 35000000 Offset drift (typ) (µV/°C): 20 Iout (typ) (mA): 190 2nd harmonic (dBc): 70 3rd harmonic (dBc): 74 Frequency of harmonic distortion measurement (MHz): 5

GBW (typ) (MHz): 17 Slew rate (typ) (V/µs): 50 Vos (offset voltage at 25°C) (max) (mV): 20 Offset drift (typ) (V/°C): 0.00005 Iq per channel (typ) (mA): 50 Features: Shutdown Rating: Catalog Operating temperature range (°C): 0 to 125 Input bias current (max) (pA): 100 CMRR (typ) (dB): 80 Rail-to-rail: In to V- Architecture: FET

3rd harmonic (dBc): 73 Frequency of harmonic distortion measurement (MHz): 1 Architecture: FET / CMOS Input, Voltage FB Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 10 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 32 GBW (typ) (MHz): 180 BW at Acl (MHz): 440 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 100 Vn at flatband (typ) (nV√Hz): 5.4 Vn at 1 kHz (typ) (nV√Hz): 5.4 Iq per channel (typ) (mA): 10 Vos (offset voltage at 25°C) (max) (mV): 4 Rail-to-rail: No Rating: Catalog Operating temperature range (°C): -40 to 85 CMRR (typ) (dB): 110 Input bias current (max) (pA): 100 Offset drift (typ) (µV/°C): 10 Iout (typ) (mA): 50 2nd harmonic (dBc): 65 3rd harmonic (dBc): 73 Frequency of harmonic distortion measurement (MHz): 1