Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 0.16 Slew rate (typ) (V/µs): 0.06 Vos (offset voltage at 25°C) (max) (mV): 5 Iq per channel (typ) (mA): 0.007 Vn at 1 kHz (typ) (nV√Hz): 89 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 1.1 Input bias current (max) (pA): 60 CMRR (typ) (dB): 86 Iout (typ) (A): 0.0004 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.2 Input common mode headroom (to positive supply) (typ) (V): -1.2 Output swing headroom (to negative supply) (typ) (V): 0.05 Output swing headroom (to positive supply) (typ) (V): -0.05

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 0.16 Slew rate (typ) (V/µs): 0.06 Vos (offset voltage at 25°C) (max) (mV): 5 Iq per channel (typ) (mA): 0.007 Vn at 1 kHz (typ) (nV√Hz): 89 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 1.1 Input bias current (max) (pA): 60 CMRR (typ) (dB): 86 Iout (typ) (A): 0.0004 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.2 Input common mode headroom (to positive supply) (typ) (V): -1.2 Output swing headroom (to negative supply) (typ) (V): 0.05 Output swing headroom (to positive supply) (typ) (V): -0.05

3rd harmonic (dBc): 78 Frequency of harmonic distortion measurement (MHz): 1 Architecture: Current FB Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 10 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 30 GBW (typ) (MHz): 110 BW at Acl (MHz): 110 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 1550 Vn at flatband (typ) (nV√Hz): 2.8 Vn at 1 kHz (typ) (nV√Hz): 2.2 Iq per channel (typ) (mA): 4.9 Vos (offset voltage at 25°C) (max) (mV): 10 Rail-to-rail: No Rating: Catalog Operating temperature range (°C): -40 to 85 CMRR (typ) (dB): 67 Input bias current (max) (pA): 2000000 Offset drift (typ) (µV/°C): 10 Iout (typ) (mA): 270 2nd harmonic (dBc): 78 3rd harmonic (dBc): 78 Frequency of harmonic distortion measurement (MHz): 1

2nd harmonic (dBc): 78 3rd harmonic (dBc): 78 Frequency of harmonic distortion measurement (MHz): 1 Architecture: Current FB Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 10 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 30 GBW (typ) (MHz): 110 BW at Acl (MHz): 110 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 1550 Vn at flatband (typ) (nV√Hz): 2.8 Vn at 1 kHz (typ) (nV√Hz): 2.2 Iq per channel (typ) (mA): 4.9 Vos (offset voltage at 25°C) (max) (mV): 10 Rail-to-rail: No Features: Shutdown Rating: Catalog Operating temperature range (°C): -40 to 85 CMRR (typ) (dB): 67 Input bias current (max) (pA): 2000000 Offset drift (typ) (µV/°C): 10 Iout (typ) (mA): 270 2nd harmonic (dBc): 78 3rd harmonic (dBc): 78 Frequency of harmonic distortion measurement (MHz): 1

3rd harmonic (dBc): 77 Frequency of harmonic distortion measurement (MHz): 1 Architecture: Current FB Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 10 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 30 GBW (typ) (MHz): 138 BW at Acl (MHz): 138 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 1550 Vn at flatband (typ) (nV√Hz): 2.2 Vn at 1 kHz (typ) (nV√Hz): 2.2 Iq per channel (typ) (mA): 7.2 Vos (offset voltage at 25°C) (max) (mV): 10 Rail-to-rail: No Rating: Catalog Operating temperature range (°C): -40 to 85 CMRR (typ) (dB): 67 Input bias current (max) (pA): 2000000 Offset drift (typ) (µV/°C): 10 Iout (typ) (mA): 440 2nd harmonic (dBc): 80 3rd harmonic (dBc): 77 Frequency of harmonic distortion measurement (MHz): 1

2nd harmonic (dBc): 80 3rd harmonic (dBc): 77 Frequency of harmonic distortion measurement (MHz): 1 Architecture: Current FB Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 10 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 30 GBW (typ) (MHz): 138 BW at Acl (MHz): 138 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 1550 Vn at flatband (typ) (nV√Hz): 2.2 Vn at 1 kHz (typ) (nV√Hz): 2.2 Iq per channel (typ) (mA): 7.2 Vos (offset voltage at 25°C) (max) (mV): 10 Rail-to-rail: No Features: Shutdown Rating: Catalog Operating temperature range (°C): -40 to 85 CMRR (typ) (dB): 67 Input bias current (max) (pA): 2000000 Offset drift (typ) (µV/°C): 10 Iout (typ) (mA): 440 2nd harmonic (dBc): 80 3rd harmonic (dBc): 77 Frequency of harmonic distortion measurement (MHz): 1

3rd harmonic (dBc): 93 Frequency of harmonic distortion measurement (MHz): 1 Architecture: FET / CMOS Input, Voltage FB Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.5 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 GBW (typ) (MHz): 200 BW at Acl (MHz): 450 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 300 Vn at flatband (typ) (nV√Hz): 5.8 Vn at 1 kHz (typ) (nV√Hz): 5.8 Iq per channel (typ) (mA): 8.3 Vos (offset voltage at 25°C) (max) (mV): 9 Rail-to-rail: In to V-, Out Rating: Catalog Operating temperature range (°C): -40 to 125 CMRR (typ) (dB): 80 Input bias current (max) (pA): 50 Offset drift (typ) (µV/°C): 7 Iout (typ) (mA): 100 2nd harmonic (dBc): 81 3rd harmonic (dBc): 93 Frequency of harmonic distortion measurement (MHz): 1

3rd harmonic (dBc): 93 Frequency of harmonic distortion measurement (MHz): 1 Architecture: FET / CMOS Input, Voltage FB Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.5 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 GBW (typ) (MHz): 200 BW at Acl (MHz): 450 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 360 Vn at flatband (typ) (nV√Hz): 5.8 Vn at 1 kHz (typ) (nV√Hz): 5.8 Iq per channel (typ) (mA): 8.3 Vos (offset voltage at 25°C) (max) (mV): 9 Rail-to-rail: Out Rating: Catalog Operating temperature range (°C): -40 to 125 CMRR (typ) (dB): 80 Input bias current (max) (pA): 50 Offset drift (typ) (µV/°C): 7 Iout (typ) (mA): 100 2nd harmonic (dBc): 81 3rd harmonic (dBc): 93 Frequency of harmonic distortion measurement (MHz): 1

2nd harmonic (dBc): 81 3rd harmonic (dBc): 93 Frequency of harmonic distortion measurement (MHz): 1 Architecture: FET / CMOS Input, Voltage FB Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.5 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 GBW (typ) (MHz): 200 BW at Acl (MHz): 200 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 300 Vn at flatband (typ) (nV√Hz): 5.8 Vn at 1 kHz (typ) (nV√Hz): 5.8 Iq per channel (typ) (mA): 8.3 Vos (offset voltage at 25°C) (max) (mV): 9 Rail-to-rail: In to V-, Out Features: Shutdown Rating: Catalog Operating temperature range (°C): -40 to 125 CMRR (typ) (dB): 80 Input bias current (max) (pA): 50 Offset drift (typ) (µV/°C): 7 Iout (typ) (mA): 100 2nd harmonic (dBc): 81 3rd harmonic (dBc): 93 Frequency of harmonic distortion measurement (MHz): 1

3rd harmonic (dBc): 50 Frequency of harmonic distortion measurement (MHz): 5 Radiation, TID (typ) (krad): 100 Radiation, SEL (MeV·cm2/mg): Bipolar Architecture: Voltage FB Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 GBW (typ) (MHz): 100 BW at Acl (MHz): 80 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 3000 Vn at flatband (typ) (nV√Hz): 12 Vn at 1 kHz (typ) (nV√Hz): 12 Iq per channel (typ) (mA): 2.3 Vos (offset voltage at 25°C) (max) (mV): 1.5 Rail-to-rail: No Rating: Space Operating temperature range (°C): -55 to 125 CMRR (typ) (dB): 110 Input bias current (max) (pA): 2500000 Offset drift (typ) (µV/°C): 6 Iout (typ) (mA): 85 2nd harmonic (dBc): 50 3rd harmonic (dBc): 50 Frequency of harmonic distortion measurement (MHz): 5 Radiation, TID (typ) (krad): 100 Radiation, SEL (MeV·cm2/mg): Bipolar