Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 12 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 3.5 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 7 Slew rate (typ) (V/µs): 10 Vos (offset voltage at 25°C) (max) (mV): 7 Iq per channel (typ) (mA): 1.1 Vn at 1 kHz (typ) (nV√Hz): 30 Rating: Catalog Operating temperature range (°C): -40 to 85 Offset drift (typ) (µV/°C): 8 Input bias current (max) (pA): 10 CMRR (typ) (dB): 84 Iout (typ) (A): 0.03 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.075 Output swing headroom (to positive supply) (typ) (V): -0.075

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 12 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 3.5 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 7 Slew rate (typ) (V/µs): 10 Vos (offset voltage at 25°C) (max) (mV): 7 Iq per channel (typ) (mA): 1.1 Vn at 1 kHz (typ) (nV√Hz): 30 Rating: Catalog Operating temperature range (°C): -40 to 85 Offset drift (typ) (µV/°C): 8 Input bias current (max) (pA): 10 CMRR (typ) (dB): 84 Iout (typ) (A): 0.03 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.075 Output swing headroom (to positive supply) (typ) (V): -0.075

3rd harmonic (dBc): 81 Frequency of harmonic distortion measurement (MHz): 5 Architecture: Current FB Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 12.6 GBW (typ) (MHz): 220 BW at Acl (MHz): 220 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 2000 Vn at flatband (typ) (nV√Hz): 2 Vn at 1 kHz (typ) (nV√Hz): 2 Iq per channel (typ) (mA): 18 Vos (offset voltage at 25°C) (max) (mV): 4.5 Rail-to-rail: No Rating: Catalog Operating temperature range (°C): -40 to 85 CMRR (typ) (dB): 55 Input bias current (max) (pA): 35000000 Offset drift (typ) (µV/°C): 4 Iout (typ) (mA): 500 2nd harmonic (dBc): 72 3rd harmonic (dBc): 81 Frequency of harmonic distortion measurement (MHz): 5

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.5 Rail-to-rail: In to V+, Out GBW (typ) (MHz): 11 Slew rate (typ) (V/µs): 6 Vos (offset voltage at 25°C) (max) (mV): 3.5 Iq per channel (typ) (mA): 0.8 Vn at 1 kHz (typ) (nV√Hz): 53 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 3 Input bias current (max) (pA): 50 CMRR (typ) (dB): 99 Iout (typ) (A): 0.028 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 1 Input common mode headroom (to positive supply) (typ) (V): 0.2 Output swing headroom (to negative supply) (typ) (V): 0.025 Output swing headroom (to positive supply) (typ) (V): -0.02

Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.5 Rail-to-rail: In to V+, Out GBW (typ) (MHz): 11 Slew rate (typ) (V/µs): 6 Vos (offset voltage at 25°C) (max) (mV): 3.5 Iq per channel (typ) (mA): 0.8 Vn at 1 kHz (typ) (nV√Hz): 53 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 3 Input bias current (max) (pA): 50 CMRR (typ) (dB): 99 Iout (typ) (A): 0.028 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 1 Input common mode headroom (to positive supply) (typ) (V): 0.2 Output swing headroom (to negative supply) (typ) (V): 0.025 Output swing headroom (to positive supply) (typ) (V): -0.02

2nd harmonic (dBc): 81 3rd harmonic (dBc): 93 Frequency of harmonic distortion measurement (MHz): 1 Architecture: FET / CMOS Input, Voltage FB Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 GBW (typ) (MHz): 200 BW at Acl (MHz): 200 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 300 Vn at flatband (typ) (nV√Hz): 5.8 Vn at 1 kHz (typ) (nV√Hz): 5.8 Iq per channel (typ) (mA): 8.3 Vos (offset voltage at 25°C) (max) (mV): 9 Rail-to-rail: In to V-, Out Features: Shutdown Rating: Catalog Operating temperature range (°C): -40 to 125 CMRR (typ) (dB): 80 Input bias current (max) (pA): 50 Offset drift (typ) (µV/°C): 7 Iout (typ) (mA): 100 2nd harmonic (dBc): 81 3rd harmonic (dBc): 93 Frequency of harmonic distortion measurement (MHz): 1

3rd harmonic (dBc): 100 Frequency of harmonic distortion measurement (MHz): 1 Architecture: Voltage FB Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 5 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 12 GBW (typ) (MHz): 400 BW at Acl (MHz): 400 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 170 Vn at flatband (typ) (nV√Hz): 2 Vn at 1 kHz (typ) (nV√Hz): 2 Iq per channel (typ) (mA): 4 Vos (offset voltage at 25°C) (max) (mV): 1.2 Rail-to-rail: No Rating: Catalog Operating temperature range (°C): -40 to 85 CMRR (typ) (dB): 110 Input bias current (max) (pA): 18000000 Offset drift (typ) (µV/°C): 5 Iout (typ) (mA): 150 2nd harmonic (dBc): 91 3rd harmonic (dBc): 100 Frequency of harmonic distortion measurement (MHz): 1

Output swing headroom (to positive supply) (typ) (V): -0.07 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In, Out GBW (typ) (MHz): 3 Slew rate (typ) (V/µs): 2.4 Vos (offset voltage at 25°C) (max) (mV): 4.5 Iq per channel (typ) (mA): 0.55 Vn at 1 kHz (typ) (nV√Hz): 39 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 2 Features: Shutdown Input bias current (max) (pA): 60 CMRR (typ) (dB): 72 Iout (typ) (A): 0.007 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): 0 Output swing headroom (to negative supply) (typ) (V): 0.05 Output swing headroom (to positive supply) (typ) (V): -0.07

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In, Out GBW (typ) (MHz): 3 Slew rate (typ) (V/µs): 2.4 Vos (offset voltage at 25°C) (max) (mV): 4.5 Iq per channel (typ) (mA): 0.55 Vn at 1 kHz (typ) (nV√Hz): 39 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 2 Input bias current (max) (pA): 60 CMRR (typ) (dB): 72 Iout (typ) (A): 0.007 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): 0 Output swing headroom (to negative supply) (typ) (V): 0.05 Output swing headroom (to positive supply) (typ) (V): -0.07

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In, Out GBW (typ) (MHz): 3 Slew rate (typ) (V/µs): 2.4 Vos (offset voltage at 25°C) (max) (mV): 4.5 Iq per channel (typ) (mA): 0.55 Vn at 1 kHz (typ) (nV√Hz): 39 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 2 Input bias current (max) (pA): 60 CMRR (typ) (dB): 72 Iout (typ) (A): 0.007 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): 0 Output swing headroom (to negative supply) (typ) (V): 0.05 Output swing headroom (to positive supply) (typ) (V): -0.07