2nd harmonic (dBc): 92 3rd harmonic (dBc): 95 Frequency of harmonic distortion measurement (MHz): 1 Architecture: Voltage FB Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 5 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 12 GBW (typ) (MHz): 180 BW at Acl (MHz): 90 Acl, min spec gain (V/V): 2 Slew rate (typ) (V/µs): 170 Vn at flatband (typ) (nV√Hz): 4.5 Vn at 1 kHz (typ) (nV√Hz): 4.5 Iq per channel (typ) (mA): 6.2 Vos (offset voltage at 25°C) (max) (mV): 5.5 Rail-to-rail: In to V- Features: Decompensated Rating: Catalog Operating temperature range (°C): -40 to 150 CMRR (typ) (dB): 110 Input bias current (max) (pA): 14000000 Offset drift (typ) (µV/°C): 5 Iout (typ) (mA): 200 2nd harmonic (dBc): 92 3rd harmonic (dBc): 95 Frequency of harmonic distortion measurement (MHz): 1

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 1 Slew rate (typ) (V/µs): 0.66 Vos (offset voltage at 25°C) (max) (mV): 8 Iq per channel (typ) (mA): 0.163 Vn at 1 kHz (typ) (nV√Hz): 40 Rating: Catalog Operating temperature range (°C): -40 to 85 Offset drift (typ) (µV/°C): 5 Input bias current (max) (pA): 35 CMRR (typ) (dB): 111 Iout (typ) (A): 0.06 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -1.2 Output swing headroom (to negative supply) (typ) (V): 0.034 Output swing headroom (to positive supply) (typ) (V): -0.034

Output swing headroom (to positive supply) (typ) (V): -0.04 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 12 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4 Rail-to-rail: In, Out GBW (typ) (MHz): 1 Slew rate (typ) (V/µs): 0.6 Vos (offset voltage at 25°C) (max) (mV): 0.75 Iq per channel (typ) (mA): 0.16 Vn at 1 kHz (typ) (nV√Hz): 45 Rating: Catalog Operating temperature range (°C): -40 to 85 Offset drift (typ) (µV/°C): 4 Features: High Cload Drive Input bias current (max) (pA): 10 CMRR (typ) (dB): 90 Iout (typ) (A): 0.04 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): 0.3 Output swing headroom (to negative supply) (typ) (V): 0.04 Output swing headroom (to positive supply) (typ) (V): -0.04

Output swing headroom (to positive supply) (typ) (V): -0.04 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 12 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4 Rail-to-rail: In, Out GBW (typ) (MHz): 3 Slew rate (typ) (V/µs): 3 Vos (offset voltage at 25°C) (max) (mV): 0.75 Iq per channel (typ) (mA): 0.16 Vn at 1 kHz (typ) (nV√Hz): 45 Rating: Catalog Operating temperature range (°C): -40 to 85 Offset drift (typ) (µV/°C): 4 Features: Decompensated Input bias current (max) (pA): 10 CMRR (typ) (dB): 90 Iout (typ) (A): 0.04 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): 0.3 Output swing headroom (to negative supply) (typ) (V): 0.04 Output swing headroom (to positive supply) (typ) (V): -0.04

Output swing headroom (to positive supply) (typ) (V): -0.04 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 12 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4 Rail-to-rail: In, Out GBW (typ) (MHz): 1 Slew rate (typ) (V/µs): 0.6 Vos (offset voltage at 25°C) (max) (mV): 5 Iq per channel (typ) (mA): 0.16 Vn at 1 kHz (typ) (nV√Hz): 45 Rating: Catalog Operating temperature range (°C): -40 to 85 Offset drift (typ) (µV/°C): 4 Features: High Cload Drive Input bias current (max) (pA): 10 CMRR (typ) (dB): 77 Iout (typ) (A): 0.04 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): 0.3 Output swing headroom (to negative supply) (typ) (V): 0.04 Output swing headroom (to positive supply) (typ) (V): -0.04

Output swing headroom (to positive supply) (typ) (V): -0.04 Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 12 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4 Rail-to-rail: In, Out GBW (typ) (MHz): 1 Slew rate (typ) (V/µs): 0.6 Vos (offset voltage at 25°C) (max) (mV): 0.75 Iq per channel (typ) (mA): 0.16 Vn at 1 kHz (typ) (nV√Hz): 45 Rating: Catalog Operating temperature range (°C): -40 to 85 Offset drift (typ) (µV/°C): 4 Features: High Cload Drive Input bias current (max) (pA): 10 CMRR (typ) (dB): 90 Iout (typ) (A): 0.04 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): 0.3 Output swing headroom (to negative supply) (typ) (V): 0.04 Output swing headroom (to positive supply) (typ) (V): -0.04

Output swing headroom (to positive supply) (typ) (V): -0.04 Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 12 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4 Rail-to-rail: In, Out GBW (typ) (MHz): 3 Slew rate (typ) (V/µs): 3 Vos (offset voltage at 25°C) (max) (mV): 0.75 Iq per channel (typ) (mA): 0.16 Vn at 1 kHz (typ) (nV√Hz): 45 Rating: Catalog Operating temperature range (°C): -40 to 85 Offset drift (typ) (µV/°C): 4 Features: Decompensated Input bias current (max) (pA): 10 CMRR (typ) (dB): 90 Iout (typ) (A): 0.04 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): 0.3 Output swing headroom (to negative supply) (typ) (V): 0.04 Output swing headroom (to positive supply) (typ) (V): -0.04

Output swing headroom (to positive supply) (typ) (V): -0.04 Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 12 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4 Rail-to-rail: In, Out GBW (typ) (MHz): 1 Slew rate (typ) (V/µs): 0.6 Vos (offset voltage at 25°C) (max) (mV): 5 Iq per channel (typ) (mA): 0.16 Vn at 1 kHz (typ) (nV√Hz): 45 Rating: Catalog Operating temperature range (°C): -40 to 85 Offset drift (typ) (µV/°C): 4 Features: High Cload Drive Input bias current (max) (pA): 10 CMRR (typ) (dB): 77 Iout (typ) (A): 0.04 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): 0.3 Output swing headroom (to negative supply) (typ) (V): 0.04 Output swing headroom (to positive supply) (typ) (V): -0.04

Output swing headroom (to positive supply) (typ) (V): -0.04 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 12 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4 Rail-to-rail: In, Out GBW (typ) (MHz): 3 Slew rate (typ) (V/µs): 3 Vos (offset voltage at 25°C) (max) (mV): 0.75 Iq per channel (typ) (mA): 0.16 Vn at 1 kHz (typ) (nV√Hz): 45 Rating: Catalog Operating temperature range (°C): -40 to 85 Offset drift (typ) (µV/°C): 4 Features: Decompensated Input bias current (max) (pA): 10 CMRR (typ) (dB): 90 Iout (typ) (A): 0.04 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): 0.3 Output swing headroom (to negative supply) (typ) (V): 0.04 Output swing headroom (to positive supply) (typ) (V): -0.04

Output swing headroom (to positive supply) (typ) (V): -0.04 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 12 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4 Rail-to-rail: In, Out GBW (typ) (MHz): 1 Slew rate (typ) (V/µs): 0.6 Vos (offset voltage at 25°C) (max) (mV): 5 Iq per channel (typ) (mA): 0.16 Vn at 1 kHz (typ) (nV√Hz): 45 Rating: Catalog Operating temperature range (°C): -40 to 85 Offset drift (typ) (µV/°C): 4 Features: High Cload Drive Input bias current (max) (pA): 10 CMRR (typ) (dB): 77 Iout (typ) (A): 0.04 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): 0.3 Output swing headroom (to negative supply) (typ) (V): 0.04 Output swing headroom (to positive supply) (typ) (V): -0.04