Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 3.6 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Rail-to-rail: In, Out GBW (typ) (MHz): 8 Slew rate (typ) (V/µs): 5 Vos (offset voltage at 25°C) (max) (mV): 3 Iq per channel (typ) (mA): 0.65 Vn at 1 kHz (typ) (nV√Hz): 18 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 8 Input bias current (max) (pA): 15 CMRR (typ) (dB): 80 Iout (typ) (A): 0.017 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.2 Input common mode headroom (to positive supply) (typ) (V): 0.2 Output swing headroom (to negative supply) (typ) (V): 0.07 Output swing headroom (to positive supply) (typ) (V): -0.1

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 6 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In, Out GBW (typ) (MHz): 6.4 Slew rate (typ) (V/µs): 1.6 Vos (offset voltage at 25°C) (max) (mV): 1.5 Iq per channel (typ) (mA): 0.55 Vn at 1 kHz (typ) (nV√Hz): 11 Rating: Military Operating temperature range (°C): -55 to 125 Offset drift (typ) (µV/°C): 2 Input bias current (max) (pA): 14000 CMRR (typ) (dB): 85 Iout (typ) (A): 0.08 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): 0 Output swing headroom (to negative supply) (typ) (V): 0.2 Output swing headroom (to positive supply) (typ) (V): -0.2

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 6 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In, Out GBW (typ) (MHz): 6.4 Slew rate (typ) (V/µs): 1.6 Vos (offset voltage at 25°C) (max) (mV): 2 Iq per channel (typ) (mA): 0.55 Vn at 1 kHz (typ) (nV√Hz): 11 Rating: Military Operating temperature range (°C): -55 to 125 Offset drift (typ) (µV/°C): 2 Input bias current (max) (pA): 14000 CMRR (typ) (dB): 85 Iout (typ) (A): 0.08 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): 0 Output swing headroom (to negative supply) (typ) (V): 0.2 Output swing headroom (to positive supply) (typ) (V): -0.2

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Rail-to-rail: In, Out GBW (typ) (MHz): 0.07 Slew rate (typ) (V/µs): 0.02 Vos (offset voltage at 25°C) (max) (mV): 10 Iq per channel (typ) (mA): 0.001 Vn at 1 kHz (typ) (nV√Hz): 300 Rating: Catalog Operating temperature range (°C): -55 to 125 Offset drift (typ) (µV/°C): 15 Input bias current (max) (pA): 10 CMRR (typ) (dB): 60 Iout (typ) (A): 0.008 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0.002 Input common mode headroom (to positive supply) (typ) (V): 0.001 Output swing headroom (to negative supply) (typ) (V): 0.3 Output swing headroom (to positive supply) (typ) (V): -0.3

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Rail-to-rail: In, Out GBW (typ) (MHz): 0.07 Slew rate (typ) (V/µs): 0.02 Vos (offset voltage at 25°C) (max) (mV): 10 Iq per channel (typ) (mA): 0.001 Vn at 1 kHz (typ) (nV√Hz): 300 Rating: Catalog Operating temperature range (°C): -40 to 85 Offset drift (typ) (µV/°C): 15 Input bias current (max) (pA): 10 CMRR (typ) (dB): 60 Iout (typ) (A): 0.008 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0.002 Input common mode headroom (to positive supply) (typ) (V): 0.001 Output swing headroom (to negative supply) (typ) (V): 0.3 Output swing headroom (to positive supply) (typ) (V): -0.3

Slew rate (typ) (V/µs): 7.2 Vos (offset voltage at 25°C) (max) (mV): 3 Offset drift (typ) (V/°C): 0.000005 Iq per channel (typ) (mA): 5.5 Rating: Catalog Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 100 CMRR (typ) (dB): 94 Rail-to-rail: No Architecture: FET

GBW (typ) (MHz): 7.5 Slew rate (typ) (V/µs): 23 Vos (offset voltage at 25°C) (max) (mV): 3 Offset drift (typ) (V/°C): 0.000005 Iq per channel (typ) (mA): 5.5 Features: Decompensated Rating: Catalog Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 100 CMRR (typ) (dB): 94 Rail-to-rail: No Architecture: FET

Output swing headroom (to positive supply) (typ) (V): -0.2 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 6 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In, Out GBW (typ) (MHz): 6.4 Slew rate (typ) (V/µs): 1.6 Vos (offset voltage at 25°C) (max) (mV): 2 Iq per channel (typ) (mA): 0.55 Vn at 1 kHz (typ) (nV√Hz): 11 Rating: Military Operating temperature range (°C): -55 to 125 Offset drift (typ) (µV/°C): 2 Features: Shutdown Input bias current (max) (pA): 14000 CMRR (typ) (dB): 85 Iout (typ) (A): 0.08 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): 0 Output swing headroom (to negative supply) (typ) (V): 0.2 Output swing headroom (to positive supply) (typ) (V): -0.2

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 6 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In, Out GBW (typ) (MHz): 6.4 Slew rate (typ) (V/µs): 1.6 Vos (offset voltage at 25°C) (max) (mV): 2 Iq per channel (typ) (mA): 0.55 Vn at 1 kHz (typ) (nV√Hz): 11 Rating: Military Operating temperature range (°C): -55 to 125 Offset drift (typ) (µV/°C): 2 Input bias current (max) (pA): 14000 CMRR (typ) (dB): 85 Iout (typ) (A): 0.08 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): 0 Output swing headroom (to negative supply) (typ) (V): 0.2 Output swing headroom (to positive supply) (typ) (V): -0.2

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.5 Rail-to-rail: In, Out GBW (typ) (MHz): 0.0055 Slew rate (typ) (V/µs): 0.0025 Vos (offset voltage at 25°C) (max) (mV): 1.2 Iq per channel (typ) (mA): 0.00088 Vn at 1 kHz (typ) (nV√Hz): 500 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 3 Input bias current (max) (pA): 300 CMRR (typ) (dB): 120 Iout (typ) (A): 0.0002 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0.00095 Input common mode headroom (to positive supply) (typ) (V): 0.00088 Output swing headroom (to negative supply) (typ) (V): 0.02 Output swing headroom (to positive supply) (typ) (V): -0.02