Output swing headroom (to positive supply) (typ) (V): -0.115 Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 40 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Rail-to-rail: In to V+ GBW (typ) (MHz): 5.25 Slew rate (typ) (V/µs): 20 Vos (offset voltage at 25°C) (max) (mV): 4 Iq per channel (typ) (mA): 0.9375 Vn at 1 kHz (typ) (nV√Hz): 37 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 2 Features: Cost Optimized, EMI Hardened, Small Size, Standard Amps Input bias current (max) (pA): 120 CMRR (typ) (dB): 105 Iout (typ) (A): 0.026 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 1.5 Input common mode headroom (to positive supply) (typ) (V): 0 Output swing headroom (to negative supply) (typ) (V): 0.105 Output swing headroom (to positive supply) (typ) (V): -0.115

THD + N at 1 kHz (typ) (%): 0.0001 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Vos (offset voltage at 25°C) (max) (mV): 0.15 GBW (typ) (MHz): 5.5 Slew rate (typ) (V/µs): 20 Rail-to-rail: Out Offset drift (typ) (µV/°C): 0.4 Iq per channel (typ) (mA): 0.445 Vn at 1 kHz (typ) (nV√Hz): 7 CMRR (typ) (dB): 140 Rating: Catalog Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 10 Iout (typ) (A): 0.02 Architecture: FET Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): -3.5 Output swing headroom (to negative supply) (typ) (V): 0.1 Output swing headroom (to positive supply) (typ) (V): -0.1 THD + N at 1 kHz (typ) (%): 0.0001

GBW (typ) (MHz): 6.5 Slew rate (typ) (V/µs): 32 Vos (offset voltage at 25°C) (max) (mV): 3.4 Offset drift (typ) (V/°C): 0.000004 Iq per channel (typ) (mA): 3.2 Features: Shutdown Rating: Catalog Operating temperature range (°C): -40 to 85 Input bias current (max) (pA): 100 CMRR (typ) (dB): 120 Rail-to-rail: No Architecture: FET

Output swing headroom (to positive supply) (typ) (V): 0.115 Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 40 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Rail-to-rail: In to V+ GBW (typ) (MHz): 5.25 Slew rate (typ) (V/µs): 20 Vos (offset voltage at 25°C) (max) (mV): 4 Iq per channel (typ) (mA): 0.9375 Vn at 1 kHz (typ) (nV√Hz): 37 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 2 Features: Cost Optimized, EMI Hardened, Small Size, Standard Amps Input bias current (max) (pA): 120 CMRR (typ) (dB): 105 Iout (typ) (A): 0.026 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 1.5 Input common mode headroom (to positive supply) (typ) (V): 0 Output swing headroom (to negative supply) (typ) (V): 0.105 Output swing headroom (to positive supply) (typ) (V): 0.115

2nd harmonic (dBc): -105 3rd harmonic (dBc): -95 Frequency of harmonic distortion measurement (MHz): 0.02 Architecture: FET / CMOS Input, Voltage FB Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 GBW (typ) (MHz): 50 BW at Acl (MHz): 2.5 Acl, min spec gain (V/V): 6 Slew rate (typ) (V/µs): 24 Vn at flatband (typ) (nV√Hz): 3.8 Vn at 1 kHz (typ) (nV√Hz): 5.3 Iq per channel (typ) (mA): 0.9 Vos (offset voltage at 25°C) (max) (mV): 0.6 Rail-to-rail: In to V-, Out Features: Decompensated, Shutdown Rating: Catalog Operating temperature range (°C): -40 to 125 CMRR (typ) (dB): 100 Input bias current (max) (pA): 10 Offset drift (typ) (µV/°C): 0.3 Iout (typ) (mA): 20 2nd harmonic (dBc): -105 3rd harmonic (dBc): -95 Frequency of harmonic distortion measurement (MHz): 0.02

Output swing headroom (to positive supply) (typ) (V): 0.02 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.2 Rail-to-rail: In, Out GBW (typ) (MHz): 0.35 Slew rate (typ) (V/µs): 0.2 Vos (offset voltage at 25°C) (max) (mV): 2.25 Iq per channel (typ) (mA): 0.01 Vn at 1 kHz (typ) (nV√Hz): 66 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 0.8 Features: Cost Optimized, EMI Hardened, Low Power, Shutdown, Small Size Input bias current (max) (pA): 12 CMRR (typ) (dB): 89 Iout (typ) (A): 0.04 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): 0 Output swing headroom (to negative supply) (typ) (V): 0.02 Output swing headroom (to positive supply) (typ) (V): 0.02

2nd harmonic (dBc): 85 3rd harmonic (dBc): 95 Frequency of harmonic distortion measurement (MHz): 10 Architecture: Voltage FB Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 3.3 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.25 GBW (typ) (MHz): 1080 BW at Acl (MHz): 1100 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 350 Vn at flatband (typ) (nV√Hz): 0.9 Vn at 1 kHz (typ) (nV√Hz): 0.9 Iq per channel (typ) (mA): 17.2 Vos (offset voltage at 25°C) (max) (mV): 1.5 Rail-to-rail: No Features: Shutdown Rating: Catalog Operating temperature range (°C): -40 to 125 CMRR (typ) (dB): 106 Input bias current (max) (pA): 5000000 Offset drift (typ) (µV/°C): 0.7 Iout (typ) (mA): 100 2nd harmonic (dBc): 85 3rd harmonic (dBc): 95 Frequency of harmonic distortion measurement (MHz): 10

Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In, Out GBW (typ) (MHz): 4.5 Slew rate (typ) (V/µs): 21 Vos (offset voltage at 25°C) (max) (mV): 0.75 Iq per channel (typ) (mA): 0.56 Vn at 1 kHz (typ) (nV√Hz): 10.8 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 0.3 CMRR (typ) (dB): 125 Iout (typ) (A): 0.075 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.025 Output swing headroom (to positive supply) (typ) (V): -0.025

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 40 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 3.5 Slew rate (typ) (V/µs): 20 Vos (offset voltage at 25°C) (max) (mV): 1.8 Iq per channel (typ) (mA): 0.65 Vn at 1 kHz (typ) (nV√Hz): 15 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 1.5 Features: Cost Optimized, EMI Hardened, MUX Friendly, Small Size CMRR (typ) (dB): 110 Iout (typ) (A): 0.06 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.025 Output swing headroom (to positive supply) (typ) (V): -0.025

Output swing headroom (to negative supply) (typ) (V): 0.005 Output swing headroom (to positive supply) (typ) (V): -0.001 THD + N at 1 kHz (typ) (%): 0.0005 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.5 Vos (offset voltage at 25°C) (max) (mV): 0.005 GBW (typ) (MHz): 10 Features: EMI Hardened, High Cload Drive, Zero Crossover, Zero Drift Slew rate (typ) (V/µs): 5 Rail-to-rail: In, Out Offset drift (typ) (µV/°C): 0.005 Iq per channel (typ) (mA): 1.7 Vn at 1 kHz (typ) (nV√Hz): 7 CMRR (typ) (dB): 138 Rating: Automotive Operating temperature range (°C): -40 to 125 TI functional safety category: Functional Safety-Capable Input bias current (max) (pA): 350 Iout (typ) (A): 0.06 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.005 Output swing headroom (to positive supply) (typ) (V): -0.001 THD + N at 1 kHz (typ) (%): 0.0005