Common-mode input low (min) (V): -37.5 Common-mode input high (max) (V): 37.5 Input offset (±) (max) (V): 0.0005 Iq (typ) (mA): 2.4 Slew rate (typ) (V/µs): 14 Voltage gain (min) (V/V): 0.5 Voltage gain (max) (V/V): 2 Small-signal bandwidth (typ) (Hz): 4000000 Rating: Catalog Operating temperature range (°C): -40 to 85 Gain drift (max) (ppm/°C): 1 Gain error (±) (max) (%): 0.05

3rd harmonic (dBc): 72 Frequency of harmonic distortion measurement (MHz): 1 Architecture: Voltage FB Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 9 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 32 GBW (typ) (MHz): 180 BW at Acl (MHz): 180 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 400 Vn at flatband (typ) (nV√Hz): 14.5 Vn at 1 kHz (typ) (nV√Hz): 14.5 Iq per channel (typ) (mA): 7.8 Vos (offset voltage at 25°C) (max) (mV): 8 Rail-to-rail: No Rating: Catalog Operating temperature range (°C): -40 to 85 CMRR (typ) (dB): 110 Input bias current (max) (pA): 3000000 Offset drift (typ) (µV/°C): 15 Iout (typ) (mA): 115 2nd harmonic (dBc): 72 3rd harmonic (dBc): 72 Frequency of harmonic distortion measurement (MHz): 1

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.6 Vos (offset voltage at 25°C) (max) (mV): 0.2 GBW (typ) (MHz): 1.8 Slew rate (typ) (V/µs): 2.5 Rail-to-rail: In to V-, Out Offset drift (typ) (µV/°C): 0.5 Iq per channel (typ) (mA): 1 Vn at 1 kHz (typ) (nV√Hz): 8 CMRR (typ) (dB): 110 Rating: Automotive Operating temperature range (°C): -55 to 125 Input bias current (max) (pA): 60 Iout (typ) (A): 0.0045 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): -2.3 Output swing headroom (to negative supply) (typ) (V): 0.05 Output swing headroom (to positive supply) (typ) (V): -0.2

Output swing headroom (to positive supply) (typ) (V): -0.01 THD + N at 1 kHz (typ) (%): 0.0008 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.4 Vos (offset voltage at 25°C) (max) (mV): 0.95 Offset drift (typ) (µV/°C): 2 Input bias current (max) (pA): 60 GBW (typ) (MHz): 2.18 Features: High Cload Drive Slew rate (typ) (V/µs): 3.6 Rail-to-rail: In to V-, Out Iq per channel (typ) (mA): 1.1 Vn at 1 kHz (typ) (nV√Hz): 9 CMRR (typ) (dB): 75 Rating: Automotive Operating temperature range (°C): -55 to 125 Iout (typ) (A): 0.0022 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -0.8 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.01 THD + N at 1 kHz (typ) (%): 0.0008

Output swing headroom (to positive supply) (typ) (V): -0.06 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.4 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 2.18 Slew rate (typ) (V/µs): 3.6 Vos (offset voltage at 25°C) (max) (mV): 2.5 Iq per channel (typ) (mA): 1.1 Vn at 1 kHz (typ) (nV√Hz): 9 Rating: Automotive Operating temperature range (°C): -55 to 125 Offset drift (typ) (µV/°C): 2 Features: High Cload Drive Input bias current (max) (pA): 60 CMRR (typ) (dB): 75 Iout (typ) (A): 0.0022 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -0.8 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.06

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4 Rail-to-rail: In to V- GBW (typ) (MHz): 0.085 Slew rate (typ) (V/µs): 0.03 Vos (offset voltage at 25°C) (max) (mV): 10 Iq per channel (typ) (mA): 0.01 Vn at 1 kHz (typ) (nV√Hz): 68 Rating: Military Operating temperature range (°C): -55 to 125 Offset drift (typ) (µV/°C): 1.4 Input bias current (max) (pA): 60 CMRR (typ) (dB): 94 Iout (typ) (A): 0.001 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -0.8 Output swing headroom (to negative supply) (typ) (V): 0.03 Output swing headroom (to positive supply) (typ) (V): -0.9

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 40 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4 Vos (offset voltage at 25°C) (max) (mV): 0.6 GBW (typ) (MHz): 1.7 Slew rate (typ) (V/µs): 0.5 Rail-to-rail: In to V- Offset drift (typ) (µV/°C): 2 Iq per channel (typ) (mA): 0.17 Vn at 1 kHz (typ) (nV√Hz): 17 CMRR (typ) (dB): 110 Rating: Automotive Operating temperature range (°C): -55 to 125 Input bias current (max) (pA): 70000 Iout (typ) (A): 0.003 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -1 Output swing headroom (to negative supply) (typ) (V): 0.7 Output swing headroom (to positive supply) (typ) (V): -0.7

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 40 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4 Vos (offset voltage at 25°C) (max) (mV): 0.4 Offset drift (typ) (µV/°C): 2 Input bias current (max) (pA): 70000 GBW (typ) (MHz): 1.7 Slew rate (typ) (V/µs): 0.5 Rail-to-rail: In to V- Iq per channel (typ) (mA): 0.225 Vn at 1 kHz (typ) (nV√Hz): 17 CMRR (typ) (dB): 102 Rating: Automotive Operating temperature range (°C): -55 to 125 Iout (typ) (A): 0.003 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -1 Output swing headroom (to negative supply) (typ) (V): 0.7 Output swing headroom (to positive supply) (typ) (V): -0.7

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 40 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4 Vos (offset voltage at 25°C) (max) (mV): 0.6 Offset drift (typ) (µV/°C): 2 Input bias current (max) (pA): 70000 GBW (typ) (MHz): 1.7 Slew rate (typ) (V/µs): 0.5 Rail-to-rail: In to V- Iq per channel (typ) (mA): 0.225 Vn at 1 kHz (typ) (nV√Hz): 17 CMRR (typ) (dB): 100 Rating: Automotive Operating temperature range (°C): -55 to 125 Iout (typ) (A): 0.003 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -1 Output swing headroom (to negative supply) (typ) (V): 0.7 Output swing headroom (to positive supply) (typ) (V): -0.7

THD + N at 1 kHz (typ) (%): 0.002 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 38 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 8 Vos (offset voltage at 25°C) (max) (mV): 0.1 GBW (typ) (MHz): 13 Slew rate (typ) (V/µs): 2.8 Rail-to-rail: No Offset drift (typ) (µV/°C): 0.4 Iq per channel (typ) (mA): 3.8 Vn at 1 kHz (typ) (nV√Hz): 2.5 CMRR (typ) (dB): 131 Rating: Automotive Operating temperature range (°C): -55 to 125 Input bias current (max) (pA): 90000 Iout (typ) (A): 0.035 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): 2 Input common mode headroom (to positive supply) (typ) (V): -2 Output swing headroom (to negative supply) (typ) (V): 1.5 Output swing headroom (to positive supply) (typ) (V): -1.8 THD + N at 1 kHz (typ) (%): 0.002