Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 6 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In, Out GBW (typ) (MHz): 0.22 Slew rate (typ) (V/µs): 0.11 Vos (offset voltage at 25°C) (max) (mV): 1 Iq per channel (typ) (mA): 0.023 Vn at 1 kHz (typ) (nV√Hz): 52 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 0.3 Input bias current (max) (pA): 5000 CMRR (typ) (dB): 80 Iout (typ) (A): 0.012 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): 0 Output swing headroom (to negative supply) (typ) (V): 0.07 Output swing headroom (to positive supply) (typ) (V): -0.03

Output swing headroom (to positive supply) (typ) (V): -0.1 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.5 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 5.1 Slew rate (typ) (V/µs): 10.5 Vos (offset voltage at 25°C) (max) (mV): 2.5 Iq per channel (typ) (mA): 1 Vn at 1 kHz (typ) (nV√Hz): 17 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 2 Features: Shutdown Input bias current (max) (pA): 60 CMRR (typ) (dB): 96 Iout (typ) (A): 0.04 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): -1.3 Output swing headroom (to negative supply) (typ) (V): 0.1 Output swing headroom (to positive supply) (typ) (V): -0.1

Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.5 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 5.1 Slew rate (typ) (V/µs): 10.5 Vos (offset voltage at 25°C) (max) (mV): 2.5 Iq per channel (typ) (mA): 1 Vn at 1 kHz (typ) (nV√Hz): 17 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 2 Input bias current (max) (pA): 60 CMRR (typ) (dB): 96 Iout (typ) (A): 0.04 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): -1.3 Output swing headroom (to negative supply) (typ) (V): 0.1 Output swing headroom (to positive supply) (typ) (V): -0.1

Output swing headroom (to positive supply) (typ) (V): -0.1 Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.5 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 5.1 Slew rate (typ) (V/µs): 10.5 Vos (offset voltage at 25°C) (max) (mV): 2.5 Iq per channel (typ) (mA): 1 Vn at 1 kHz (typ) (nV√Hz): 17 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 2 Features: Shutdown Input bias current (max) (pA): 60 CMRR (typ) (dB): 96 Iout (typ) (A): 0.04 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): -1.3 Output swing headroom (to negative supply) (typ) (V): 0.1 Output swing headroom (to positive supply) (typ) (V): -0.1

Common-mode input low (min) (V): -15 Common-mode input high (max) (V): 28 Input offset (±) (max) (V): 0.00025 Iq (typ) (mA): 0.16 Slew rate (typ) (V/µs): 0.1 Voltage gain (min) (V/V): 1 Voltage gain (max) (V/V): 1 Small-signal bandwidth (typ) (Hz): 300000 Rating: Catalog Operating temperature range (°C): -40 to 85 Gain drift (max) (ppm/°C): 1 Gain error (±) (max) (%): 0.075

THD + N at 1 kHz (typ) (%): 0.00005 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 5 Vos (offset voltage at 25°C) (max) (mV): 0.075 Offset drift (typ) (µV/°C): 0.1 Input bias current (max) (pA): 10000 GBW (typ) (MHz): 8 Slew rate (typ) (V/µs): 2.3 Rail-to-rail: No Iq per channel (typ) (mA): 3.7 Vn at 1 kHz (typ) (nV√Hz): 3 CMRR (typ) (dB): 138 Rating: Catalog Operating temperature range (°C): -40 to 85 Iout (typ) (A): 0.045 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): 2 Input common mode headroom (to positive supply) (typ) (V): -2 Output swing headroom (to negative supply) (typ) (V): 2 Output swing headroom (to positive supply) (typ) (V): -2 THD + N at 1 kHz (typ) (%): 0.00005

THD + N at 1 kHz (typ) (%): 0.0006 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Vos (offset voltage at 25°C) (max) (mV): 0.5 Offset drift (typ) (µV/°C): 4 Input bias current (max) (pA): 10 GBW (typ) (MHz): 38 Slew rate (typ) (V/µs): 22 Rail-to-rail: In, Out Iq per channel (typ) (mA): 5.2 Vn at 1 kHz (typ) (nV√Hz): 7 CMRR (typ) (dB): 84 Rating: Catalog Operating temperature range (°C): -40 to 85 Iout (typ) (A): 0.08 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.01 THD + N at 1 kHz (typ) (%): 0.0006

Output swing headroom (to positive supply) (typ) (V): -0.01 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In, Out GBW (typ) (MHz): 44 Slew rate (typ) (V/µs): 22 Vos (offset voltage at 25°C) (max) (mV): 8 Iq per channel (typ) (mA): 5.2 Vn at 1 kHz (typ) (nV√Hz): 7 Rating: Catalog Operating temperature range (°C): -40 to 85 Offset drift (typ) (µV/°C): 5 Features: High Cload Drive Input bias current (max) (pA): 10 CMRR (typ) (dB): 86 Iout (typ) (A): 0.08 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.01

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 3 Slew rate (typ) (V/µs): 1.2 Vos (offset voltage at 25°C) (max) (mV): 3 Iq per channel (typ) (mA): 0.525 Vn at 1 kHz (typ) (nV√Hz): 26 Rating: Catalog Operating temperature range (°C): -40 to 85 Offset drift (typ) (µV/°C): 2 Input bias current (max) (pA): 10 CMRR (typ) (dB): 90 Iout (typ) (A): 0.009 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.2 Input common mode headroom (to positive supply) (typ) (V): -1.2 Output swing headroom (to negative supply) (typ) (V): 0.04 Output swing headroom (to positive supply) (typ) (V): -0.04

Output swing headroom (to positive supply) (typ) (V): -0.04 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 62.5 Slew rate (typ) (V/µs): 4.6 Vos (offset voltage at 25°C) (max) (mV): 3 Iq per channel (typ) (mA): 0.525 Vn at 1 kHz (typ) (nV√Hz): 26 Rating: Catalog Operating temperature range (°C): -40 to 85 Offset drift (typ) (µV/°C): 2 Features: Decompensated Input bias current (max) (pA): 10 CMRR (typ) (dB): 90 Iout (typ) (A): 0.009 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.2 Input common mode headroom (to positive supply) (typ) (V): -1.2 Output swing headroom (to negative supply) (typ) (V): 0.04 Output swing headroom (to positive supply) (typ) (V): -0.04