Output swing headroom (to positive supply) (typ) (V): -0.08 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 15.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 1.4 Slew rate (typ) (V/µs): 1.5 Vos (offset voltage at 25°C) (max) (mV): 5 Iq per channel (typ) (mA): 0.4 Vn at 1 kHz (typ) (nV√Hz): 27 Rating: Catalog Operating temperature range (°C): -40 to 85 Offset drift (typ) (µV/°C): 2.3 Features: Small Size Input bias current (max) (pA): 0.2 CMRR (typ) (dB): 96 Iout (typ) (A): 0.005 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.5 Input common mode headroom (to positive supply) (typ) (V): -0.5 Output swing headroom (to negative supply) (typ) (V): 0.07 Output swing headroom (to positive supply) (typ) (V): -0.08

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Vos (offset voltage at 25°C) (max) (mV): 0.95 Offset drift (typ) (µV/°C): 2.5 Input bias current (max) (pA): 40000 GBW (typ) (MHz): 1.5 Slew rate (typ) (V/µs): 0.5 Rail-to-rail: In to V- Iq per channel (typ) (mA): 0.2 Vn at 1 kHz (typ) (nV√Hz): 28 CMRR (typ) (dB): 90 Rating: Catalog Operating temperature range (°C): -40 to 70 Iout (typ) (A): 0.0045 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): -0.2 Input common mode headroom (to positive supply) (typ) (V): -1.5 Output swing headroom (to negative supply) (typ) (V): 0.3 Output swing headroom (to positive supply) (typ) (V): -0.9

3rd harmonic (dBc): 50 Frequency of harmonic distortion measurement (MHz): 5 Architecture: Voltage FB Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 GBW (typ) (MHz): 100 BW at Acl (MHz): 80 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 3000 Vn at flatband (typ) (nV√Hz): 12 Vn at 1 kHz (typ) (nV√Hz): 12 Iq per channel (typ) (mA): 2.3 Vos (offset voltage at 25°C) (max) (mV): 1.5 Rail-to-rail: No Rating: Military Operating temperature range (°C): -55 to 125 CMRR (typ) (dB): 110 Input bias current (max) (pA): 2500000 Offset drift (typ) (µV/°C): 6 Iout (typ) (mA): 85 2nd harmonic (dBc): 50 3rd harmonic (dBc): 50 Frequency of harmonic distortion measurement (MHz): 5

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 30 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.2 Rail-to-rail: In, Out GBW (typ) (MHz): 4 Slew rate (typ) (V/µs): 1.25 Vos (offset voltage at 25°C) (max) (mV): 6 Iq per channel (typ) (mA): 0.6 Vn at 1 kHz (typ) (nV√Hz): 36 Rating: Catalog Operating temperature range (°C): -40 to 85 Offset drift (typ) (µV/°C): 2 Input bias current (max) (pA): 200000 CMRR (typ) (dB): 93 Iout (typ) (A): 0.0095 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.07 Output swing headroom (to positive supply) (typ) (V): -0.07

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 10 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 0.51 Slew rate (typ) (V/µs): 0.18 Vos (offset voltage at 25°C) (max) (mV): 3 Iq per channel (typ) (mA): 0.055 Vn at 1 kHz (typ) (nV√Hz): 19 Rating: Catalog Operating temperature range (°C): -40 to 85 Offset drift (typ) (µV/°C): 1 Input bias current (max) (pA): 60 CMRR (typ) (dB): 83 Iout (typ) (A): 0.01 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -0.8 Output swing headroom (to negative supply) (typ) (V): 0.125 Output swing headroom (to positive supply) (typ) (V): -0.125

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 10 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 2 Slew rate (typ) (V/µs): 1.6 Vos (offset voltage at 25°C) (max) (mV): 3 Iq per channel (typ) (mA): 0.85 Vn at 1 kHz (typ) (nV√Hz): 15 Rating: Catalog Operating temperature range (°C): -40 to 85 Offset drift (typ) (µV/°C): 1 Input bias current (max) (pA): 60 CMRR (typ) (dB): 70 Iout (typ) (A): 0.014 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -0.8 Output swing headroom (to negative supply) (typ) (V): 0.16 Output swing headroom (to positive supply) (typ) (V): -0.16

2nd harmonic (dBc): 75 3rd harmonic (dBc): 55 Frequency of harmonic distortion measurement (MHz): 5 Architecture: Voltage FB Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 GBW (typ) (MHz): 200 BW at Acl (MHz): 220 Acl, min spec gain (V/V): 2 Slew rate (typ) (V/µs): 4100 Vn at flatband (typ) (nV√Hz): 14 Vn at 1 kHz (typ) (nV√Hz): 14 Iq per channel (typ) (mA): 6.5 Vos (offset voltage at 25°C) (max) (mV): 1 Rail-to-rail: No Features: Decompensated Rating: Military Operating temperature range (°C): -55 to 125 CMRR (typ) (dB): 105 Input bias current (max) (pA): 10000000 Offset drift (typ) (µV/°C): 35 Iout (typ) (mA): 100 2nd harmonic (dBc): 75 3rd harmonic (dBc): 55 Frequency of harmonic distortion measurement (MHz): 5

Output swing headroom (to positive supply) (typ) (V): -0.125 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 10 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 0.065 Slew rate (typ) (V/µs): 0.025 Vos (offset voltage at 25°C) (max) (mV): 3 Iq per channel (typ) (mA): 0.013 Vn at 1 kHz (typ) (nV√Hz): 21 Rating: Catalog Operating temperature range (°C): -40 to 85 Offset drift (typ) (µV/°C): 0.5 Features: High Cload Drive Input bias current (max) (pA): 60 CMRR (typ) (dB): 83 Iout (typ) (A): 0.01 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -0.8 Output swing headroom (to negative supply) (typ) (V): 0.125 Output swing headroom (to positive supply) (typ) (V): -0.125

Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 15.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 3 Vos (offset voltage at 25°C) (max) (mV): 0.5 GBW (typ) (MHz): 0.05 Slew rate (typ) (V/µs): 0.015 Rail-to-rail: In, Out Offset drift (typ) (µV/°C): 2 Iq per channel (typ) (mA): 0.02 Vn at 1 kHz (typ) (nV√Hz): 80 CMRR (typ) (dB): 85 Rating: Military Operating temperature range (°C): -55 to 125 Input bias current (max) (pA): 25 Iout (typ) (A): 0.027 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.25 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.01

Rail-to-rail: No Vos (offset voltage at 25°C) (max) (mV): 0.5 Iq per channel (typ) (mA): 4 Vn at 1 kHz (typ) (nV√Hz): 8 Rating: Catalog Operating temperature range (°C): -40 to 125 Iout (typ) (A): 0.04 Architecture: FET CMRR (typ) (dB): 100 Input bias current (max) (pA): 50