Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In, Out GBW (typ) (MHz): 4.5 Slew rate (typ) (V/µs): 21 Vos (offset voltage at 25°C) (max) (mV): 0.75 Iq per channel (typ) (mA): 0.56 Vn at 1 kHz (typ) (nV√Hz): 10.8 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 0.3 CMRR (typ) (dB): 125 Iout (typ) (A): 0.075 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.025 Output swing headroom (to positive supply) (typ) (V): -0.025

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 40 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 3.5 Slew rate (typ) (V/µs): 20 Vos (offset voltage at 25°C) (max) (mV): 1.8 Iq per channel (typ) (mA): 0.65 Vn at 1 kHz (typ) (nV√Hz): 15 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 1.5 Features: Cost Optimized, EMI Hardened, MUX Friendly CMRR (typ) (dB): 110 Iout (typ) (A): 0.06 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.025 Output swing headroom (to positive supply) (typ) (V): -0.025

Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In, Out GBW (typ) (MHz): 1.1 Slew rate (typ) (V/µs): 4.5 Vos (offset voltage at 25°C) (max) (mV): 1.5 Iq per channel (typ) (mA): 0.12 Vn at 1 kHz (typ) (nV√Hz): 30 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 0.6 CMRR (typ) (dB): 110 Iout (typ) (A): 0.08 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.2 Input common mode headroom (to positive supply) (typ) (V): 0.2 Output swing headroom (to negative supply) (typ) (V): 0.025 Output swing headroom (to positive supply) (typ) (V): -0.025

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 40 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 1 Slew rate (typ) (V/µs): 3 Vos (offset voltage at 25°C) (max) (mV): 2.5 Iq per channel (typ) (mA): 0.15 Vn at 1 kHz (typ) (nV√Hz): 33 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 2 Features: Cost Optimized, EMI Hardened, MUX Friendly CMRR (typ) (dB): 110 Iout (typ) (A): 0.06 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.2 Input common mode headroom (to positive supply) (typ) (V): 2 Output swing headroom (to negative supply) (typ) (V): 0.04 Output swing headroom (to positive supply) (typ) (V): -0.04

2nd harmonic (dBc): -84 3rd harmonic (dBc): -106 Frequency of harmonic distortion measurement (MHz): 1 Architecture: FET / CMOS Input, Voltage FB Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 6 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 13 GBW (typ) (MHz): 2700 BW at Acl (MHz): 765 Acl, min spec gain (V/V): 7 Slew rate (typ) (V/µs): 1400 Vn at flatband (typ) (nV√Hz): 2.2 Vn at 1 kHz (typ) (nV√Hz): 8.5 Iq per channel (typ) (mA): 27.7 Vos (offset voltage at 25°C) (max) (mV): 1.25 Rail-to-rail: No Features: Decompensated Rating: Catalog Operating temperature range (°C): -40 to 125 CMRR (typ) (dB): 90 Input bias current (max) (pA): 25 Offset drift (typ) (µV/°C): 3 Iout (typ) (mA): 60 2nd harmonic (dBc): -84 3rd harmonic (dBc): -106 Frequency of harmonic distortion measurement (MHz): 1

Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In, Out GBW (typ) (MHz): 1.1 Slew rate (typ) (V/µs): 4.5 Vos (offset voltage at 25°C) (max) (mV): 1.5 Iq per channel (typ) (mA): 0.12 Vn at 1 kHz (typ) (nV√Hz): 30 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 0.6 CMRR (typ) (dB): 110 Iout (typ) (A): 0.08 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.2 Input common mode headroom (to positive supply) (typ) (V): 0.2 Output swing headroom (to negative supply) (typ) (V): 0.025 Output swing headroom (to positive supply) (typ) (V): -0.025

Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 40 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 1 Slew rate (typ) (V/µs): 3 Vos (offset voltage at 25°C) (max) (mV): 2.5 Iq per channel (typ) (mA): 0.15 Vn at 1 kHz (typ) (nV√Hz): 33 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 2 Features: Cost Optimized, EMI Hardened, MUX Friendly CMRR (typ) (dB): 110 Iout (typ) (A): 0.06 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.2 Input common mode headroom (to positive supply) (typ) (V): 2 Output swing headroom (to negative supply) (typ) (V): 0.04 Output swing headroom (to positive supply) (typ) (V): -0.04

Rating: Catalog Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 3 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 12.6 BW at Acl (MHz): 44 Acl, min spec gain (V/V): 2 Slew rate (typ) (V/µs): 140 Architecture: Bipolar, Differential Amplifier, High Input Impedance Vn at flatband (typ) (nV√Hz): 2.3 Iq per channel (typ) (mA): 3.1 Rail-to-rail: Out Vos (offset voltage at 25°C) (max) (mV): 0.325 Operating temperature range (°C): -40 to 125 Iout (typ) (mA): 60 2nd harmonic (dBc): -122 3rd harmonic (dBc): -140 Frequency of harmonic distortion measurement (MHz): 0.05 GBW (typ) (MHz): 400 Input bias current (max) (pA): 3100000 Features: Shutdown CMRR (typ) (dB): 120 Rating: Catalog

Output swing headroom (to positive supply) (typ) (V): -0.2 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.5 Rail-to-rail: In, Out GBW (typ) (MHz): 0.0055 Slew rate (typ) (V/µs): 0.0025 Vos (offset voltage at 25°C) (max) (mV): 1.9 Iq per channel (typ) (mA): 0.00088 Vn at 1 kHz (typ) (nV√Hz): 500 Rating: Automotive Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 3 Features: Low Power Input bias current (max) (pA): 1000 CMRR (typ) (dB): 120 Iout (typ) (A): 0.0002 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0.00095 Input common mode headroom (to positive supply) (typ) (V): 0.00088 Output swing headroom (to negative supply) (typ) (V): 0.2 Output swing headroom (to positive supply) (typ) (V): -0.2

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 10 Slew rate (typ) (V/µs): 4.6 Vos (offset voltage at 25°C) (max) (mV): 0.7 Iq per channel (typ) (mA): 0.99 Vn at 1 kHz (typ) (nV√Hz): 4.6 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 0.16 Features: EMI Hardened CMRR (typ) (dB): 110 Iout (typ) (A): 0.068 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): -1.2 Output swing headroom (to negative supply) (typ) (V): 0.007 Output swing headroom (to positive supply) (typ) (V): -0.007