Number of channels: 2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 3
Rail-to-rail: In to V-
GBW (typ) (MHz): 0.525
Slew rate (typ) (V/µs): 0.46
Vos (offset voltage at 25°C) (max) (mV): 5
Iq per channel (typ) (mA): 0.105
Vn at 1 kHz (typ) (nV√Hz): 32
Rating: Catalog
Operating temperature range (°C): -40 to 85
Offset drift (typ) (µV/°C): 1.7
Input bias current (max) (pA): 60
CMRR (typ) (dB): 91
Iout (typ) (A): 0.008
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.3
Input common mode headroom (to positive supply) (typ) (V): -1
Output swing headroom (to negative supply) (typ) (V): 0.03
Output swing headroom (to positive supply) (typ) (V): -1.1
更多
Number of channels: 2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 3
Rail-to-rail: In to V-
GBW (typ) (MHz): 0.525
Slew rate (typ) (V/µs): 0.46
Vos (offset voltage at 25°C) (max) (mV): 5
Iq per channel (typ) (mA): 0.105
Vn at 1 kHz (typ) (nV√Hz): 32
Rating: Catalog
Operating temperature range (°C): -40 to 85
Offset drift (typ) (µV/°C): 1.7
Input bias current (max) (pA): 60
CMRR (typ) (dB): 91
Iout (typ) (A): 0.008
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.3
Input common mode headroom (to positive supply) (typ) (V): -1
Output swing headroom (to negative supply) (typ) (V): 0.03
Output swing headroom (to positive supply) (typ) (V): -1.1
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 3
Rail-to-rail: In to V-
GBW (typ) (MHz): 0.525
Slew rate (typ) (V/µs): 0.46
Vos (offset voltage at 25°C) (max) (mV): 10
Iq per channel (typ) (mA): 0.105
Vn at 1 kHz (typ) (nV√Hz): 32
Rating: Catalog
Operating temperature range (°C): -40 to 85
Offset drift (typ) (µV/°C): 1.7
Input bias current (max) (pA): 60
CMRR (typ) (dB): 91
Iout (typ) (A): 0.008
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.3
Input common mode headroom (to positive supply) (typ) (V): -1
Output swing headroom (to negative supply) (typ) (V): 0.03
Output swing headroom (to positive supply) (typ) (V): -1.1
更多
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 3
Rail-to-rail: In to V-
GBW (typ) (MHz): 0.525
Slew rate (typ) (V/µs): 0.46
Vos (offset voltage at 25°C) (max) (mV): 10
Iq per channel (typ) (mA): 0.105
Vn at 1 kHz (typ) (nV√Hz): 32
Rating: Catalog
Operating temperature range (°C): -40 to 85
Offset drift (typ) (µV/°C): 1.7
Input bias current (max) (pA): 60
CMRR (typ) (dB): 91
Iout (typ) (A): 0.008
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.3
Input common mode headroom (to positive supply) (typ) (V): -1
Output swing headroom (to negative supply) (typ) (V): 0.03
Output swing headroom (to positive supply) (typ) (V): -1.1
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 3
Rail-to-rail: In to V-
GBW (typ) (MHz): 0.525
Slew rate (typ) (V/µs): 0.46
Vos (offset voltage at 25°C) (max) (mV): 5
Iq per channel (typ) (mA): 0.105
Vn at 1 kHz (typ) (nV√Hz): 32
Rating: Catalog
Operating temperature range (°C): -40 to 85
Offset drift (typ) (µV/°C): 1.7
Input bias current (max) (pA): 60
CMRR (typ) (dB): 91
Iout (typ) (A): 0.008
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.3
Input common mode headroom (to positive supply) (typ) (V): -1
Output swing headroom (to negative supply) (typ) (V): 0.03
Output swing headroom (to positive supply) (typ) (V): -1.1
更多
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 3
Rail-to-rail: In to V-
GBW (typ) (MHz): 0.525
Slew rate (typ) (V/µs): 0.46
Vos (offset voltage at 25°C) (max) (mV): 5
Iq per channel (typ) (mA): 0.105
Vn at 1 kHz (typ) (nV√Hz): 32
Rating: Catalog
Operating temperature range (°C): -40 to 85
Offset drift (typ) (µV/°C): 1.7
Input bias current (max) (pA): 60
CMRR (typ) (dB): 91
Iout (typ) (A): 0.008
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.3
Input common mode headroom (to positive supply) (typ) (V): -1
Output swing headroom (to negative supply) (typ) (V): 0.03
Output swing headroom (to positive supply) (typ) (V): -1.1
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 3
Rail-to-rail: In to V-
GBW (typ) (MHz): 0.525
Slew rate (typ) (V/µs): 0.46
Vos (offset voltage at 25°C) (max) (mV): 2
Iq per channel (typ) (mA): 0.105
Vn at 1 kHz (typ) (nV√Hz): 32
Rating: Catalog
Operating temperature range (°C): -40 to 85
Offset drift (typ) (µV/°C): 1.7
Input bias current (max) (pA): 60
CMRR (typ) (dB): 91
Iout (typ) (A): 0.008
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.3
Input common mode headroom (to positive supply) (typ) (V): -1
Output swing headroom (to negative supply) (typ) (V): 0.03
Output swing headroom (to positive supply) (typ) (V): -1.1
更多
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 3
Rail-to-rail: In to V-
GBW (typ) (MHz): 0.525
Slew rate (typ) (V/µs): 0.46
Vos (offset voltage at 25°C) (max) (mV): 2
Iq per channel (typ) (mA): 0.105
Vn at 1 kHz (typ) (nV√Hz): 32
Rating: Catalog
Operating temperature range (°C): -40 to 85
Offset drift (typ) (µV/°C): 1.7
Input bias current (max) (pA): 60
CMRR (typ) (dB): 91
Iout (typ) (A): 0.008
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.3
Input common mode headroom (to positive supply) (typ) (V): -1
Output swing headroom (to negative supply) (typ) (V): 0.03
Output swing headroom (to positive supply) (typ) (V): -1.1
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 44
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 5
Vos (offset voltage at 25°C) (max) (mV): 0.8
Offset drift (typ) (µV/°C): 0.7
Input bias current (max) (pA): 30000
GBW (typ) (MHz): 0.7
Slew rate (typ) (V/µs): 0.4
Rail-to-rail: In to V-
Iq per channel (typ) (mA): 0.35
Vn at 1 kHz (typ) (nV√Hz): 22
CMRR (typ) (dB): 117
Rating: Military
Operating temperature range (°C): -55 to 125
Iout (typ) (A): 0.025
Architecture: Bipolar
Input common mode headroom (to negative supply) (typ) (V): -0.3
Input common mode headroom (to positive supply) (typ) (V): -1.2
Output swing headroom (to negative supply) (typ) (V): 1
Output swing headroom (to positive supply) (typ) (V): -1
更多
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 44
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 5
Vos (offset voltage at 25°C) (max) (mV): 0.8
Offset drift (typ) (µV/°C): 0.7
Input bias current (max) (pA): 30000
GBW (typ) (MHz): 0.7
Slew rate (typ) (V/µs): 0.4
Rail-to-rail: In to V-
Iq per channel (typ) (mA): 0.35
Vn at 1 kHz (typ) (nV√Hz): 22
CMRR (typ) (dB): 117
Rating: Military
Operating temperature range (°C): -55 to 125
Iout (typ) (A): 0.025
Architecture: Bipolar
Input common mode headroom (to negative supply) (typ) (V): -0.3
Input common mode headroom (to positive supply) (typ) (V): -1.2
Output swing headroom (to negative supply) (typ) (V): 1
Output swing headroom (to positive supply) (typ) (V): -1
Number of channels: 1
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 44
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4
Vos (offset voltage at 25°C) (max) (mV): 1
Offset drift (typ) (µV/°C): 1.7
Input bias current (max) (pA): 1500000
GBW (typ) (MHz): 6
Features: High Cload Drive
Slew rate (typ) (V/µs): 45
Rail-to-rail: In to V-
Iq per channel (typ) (mA): 3.4
Vn at 1 kHz (typ) (nV√Hz): 10.5
CMRR (typ) (dB): 108
Rating: Military
Operating temperature range (°C): -55 to 125
Iout (typ) (A): 0.031
Architecture: Bipolar
Input common mode headroom (to negative supply) (typ) (V): -0.3
Input common mode headroom (to positive supply) (typ) (V): -1.8
Output swing headroom (to negative supply) (typ) (V): 0.1
更多
Output swing headroom (to positive supply) (typ) (V): -0.8
THD + N at 1 kHz (typ) (%): 0.0052
Number of channels: 1
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 44
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4
Vos (offset voltage at 25°C) (max) (mV): 1
Offset drift (typ) (µV/°C): 1.7
Input bias current (max) (pA): 1500000
GBW (typ) (MHz): 6
Features: High Cload Drive
Slew rate (typ) (V/µs): 45
Rail-to-rail: In to V-
Iq per channel (typ) (mA): 3.4
Vn at 1 kHz (typ) (nV√Hz): 10.5
CMRR (typ) (dB): 108
Rating: Military
Operating temperature range (°C): -55 to 125
Iout (typ) (A): 0.031
Architecture: Bipolar
Input common mode headroom (to negative supply) (typ) (V): -0.3
Input common mode headroom (to positive supply) (typ) (V): -1.8
Output swing headroom (to negative supply) (typ) (V): 0.1
Output swing headroom (to positive supply) (typ) (V): -0.8
THD + N at 1 kHz (typ) (%): 0.0052
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 44
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4
Rail-to-rail: In to V-
GBW (typ) (MHz): 6
Slew rate (typ) (V/µs): 45
Vos (offset voltage at 25°C) (max) (mV): 2.4
Iq per channel (typ) (mA): 3.45
Vn at 1 kHz (typ) (nV√Hz): 10.5
Rating: Military
Operating temperature range (°C): -55 to 125
Offset drift (typ) (µV/°C): 1.7
Features: High Cload Drive
Input bias current (max) (pA): 1500000
CMRR (typ) (dB): 108
Iout (typ) (A): 0.031
Architecture: Bipolar
Input common mode headroom (to negative supply) (typ) (V): -0.3
Input common mode headroom (to positive supply) (typ) (V): -1.8
Output swing headroom (to negative supply) (typ) (V): 0.1
更多
Output swing headroom (to positive supply) (typ) (V): -0.8
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 44
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4
Rail-to-rail: In to V-
GBW (typ) (MHz): 6
Slew rate (typ) (V/µs): 45
Vos (offset voltage at 25°C) (max) (mV): 2.4
Iq per channel (typ) (mA): 3.45
Vn at 1 kHz (typ) (nV√Hz): 10.5
Rating: Military
Operating temperature range (°C): -55 to 125
Offset drift (typ) (µV/°C): 1.7
Features: High Cload Drive
Input bias current (max) (pA): 1500000
CMRR (typ) (dB): 108
Iout (typ) (A): 0.031
Architecture: Bipolar
Input common mode headroom (to negative supply) (typ) (V): -0.3
Input common mode headroom (to positive supply) (typ) (V): -1.8
Output swing headroom (to negative supply) (typ) (V): 0.1
Output swing headroom (to positive supply) (typ) (V): -0.8
Number of channels: 1
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 7
Vos (offset voltage at 25°C) (max) (mV): 0.005
GBW (typ) (MHz): 1.9
Features: Zero Drift
Slew rate (typ) (V/µs): 2.8
Rail-to-rail: In to V-, Out
Offset drift (typ) (µV/°C): 0.003
Iq per channel (typ) (mA): 1.5
Vn at 1 kHz (typ) (nV√Hz): 23
CMRR (typ) (dB): 140
Rating: Catalog
Operating temperature range (°C): 0 to 70
Input bias current (max) (pA): 30
Iout (typ) (A): 0.002
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): 0
Input common mode headroom (to positive supply) (typ) (V): -1.9
Output swing headroom (to negative supply) (typ) (V): 0.1
更多
Output swing headroom (to positive supply) (typ) (V): -0.2
Number of channels: 1
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 7
Vos (offset voltage at 25°C) (max) (mV): 0.005
GBW (typ) (MHz): 1.9
Features: Zero Drift
Slew rate (typ) (V/µs): 2.8
Rail-to-rail: In to V-, Out
Offset drift (typ) (µV/°C): 0.003
Iq per channel (typ) (mA): 1.5
Vn at 1 kHz (typ) (nV√Hz): 23
CMRR (typ) (dB): 140
Rating: Catalog
Operating temperature range (°C): 0 to 70
Input bias current (max) (pA): 30
Iout (typ) (A): 0.002
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): 0
Input common mode headroom (to positive supply) (typ) (V): -1.9
Output swing headroom (to negative supply) (typ) (V): 0.1
Output swing headroom (to positive supply) (typ) (V): -0.2
Number of channels: 1
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 44
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 5
Offset drift (typ) (µV/°C): 0.5
GBW (typ) (MHz): 0.6
Slew rate (typ) (V/µs): 0.3
Rail-to-rail: No
Iq per channel (typ) (mA): 2.7
Vn at 1 kHz (typ) (nV√Hz): 9.8
CMRR (typ) (dB): 120
Rating: Catalog
Operating temperature range (°C): to
Iout (typ) (A): 0.01
Architecture: Bipolar
Input common mode headroom (to negative supply) (typ) (V): 1
Input common mode headroom (to positive supply) (typ) (V): -1
Output swing headroom (to negative supply) (typ) (V): 1
Output swing headroom (to positive supply) (typ) (V): -1
Number of channels: 1
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 44
更多
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 5
Offset drift (typ) (µV/°C): 0.5
GBW (typ) (MHz): 0.6
Slew rate (typ) (V/µs): 0.3
Rail-to-rail: No
Iq per channel (typ) (mA): 2.7
Vn at 1 kHz (typ) (nV√Hz): 9.8
CMRR (typ) (dB): 120
Rating: Catalog
Operating temperature range (°C): to
Iout (typ) (A): 0.01
Architecture: Bipolar
Input common mode headroom (to negative supply) (typ) (V): 1
Input common mode headroom (to positive supply) (typ) (V): -1
Output swing headroom (to negative supply) (typ) (V): 1
Output swing headroom (to positive supply) (typ) (V): -1
FAN4174IS5X
制造商: ONSEMI数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 运算放大器
描述: 运算放大器，轨对轨 I/O，3.7Mhz，CMOS 运算放大器
状态: 量产中
Compliance: Pb A H P
Rail to Rail: Input/Output
Channels: 1
VS Min (V): 2.3
VS Max (V): 5.25
Iq Typ (mA): 0.2
VOS Max (mV): 6
GBW Typ (MHz): 4
SR Typ (V/µs): 3
IO Typ (mA): 12
ΔVOS/ΔT (μV/C): 2.9
eN (nV/√Hz): 25
Ibias Typ (pA): 5
CMRR Typ (dB): 73
Architecture: CMOS
Temperature Range (°C): -40 to 125
Package Type: SOT-23-5
MSL Type: 1
MSL Temp (°C): 260
更多
ON Target: No
参考价格: $0.1935