Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.6 Vos (offset voltage at 25°C) (max) (mV): 0.2 GBW (typ) (MHz): 1.8 Slew rate (typ) (V/µs): 2.5 Rail-to-rail: In to V-, Out Offset drift (typ) (µV/°C): 0.5 Iq per channel (typ) (mA): 1 Vn at 1 kHz (typ) (nV√Hz): 8 CMRR (typ) (dB): 110 Rating: Catalog Operating temperature range (°C): 0 to 70 Input bias current (max) (pA): 60 Iout (typ) (A): 0.0045 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): -2.3 Output swing headroom (to negative supply) (typ) (V): 0.05 Output swing headroom (to positive supply) (typ) (V): -0.2

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 9 Rail-to-rail: No GBW (typ) (MHz): 4.5 Slew rate (typ) (V/µs): 18 Vos (offset voltage at 25°C) (max) (mV): 1 Iq per channel (typ) (mA): 4.5 Vn at 1 kHz (typ) (nV√Hz): 9 Rating: Catalog Operating temperature range (°C): -25 to 85 Offset drift (typ) (µV/°C): 3 Input bias current (max) (pA): 10 CMRR (typ) (dB): 94 Iout (typ) (A): 0.04 Architecture: FET Input common mode headroom (to negative supply) (typ) (V): 4.5 Input common mode headroom (to positive supply) (typ) (V): -4.5 Output swing headroom (to negative supply) (typ) (V): 4 Output swing headroom (to positive supply) (typ) (V): -3

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.6 Vos (offset voltage at 25°C) (max) (mV): 0.5 GBW (typ) (MHz): 1.8 Slew rate (typ) (V/µs): 2.5 Rail-to-rail: In to V-, Out Offset drift (typ) (µV/°C): 0.5 Iq per channel (typ) (mA): 1 Vn at 1 kHz (typ) (nV√Hz): 8 CMRR (typ) (dB): 110 Rating: Catalog Operating temperature range (°C): 0 to 70 Input bias current (max) (pA): 60 Iout (typ) (A): 0.0045 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): -2.3 Output swing headroom (to negative supply) (typ) (V): 0.05 Output swing headroom (to positive supply) (typ) (V): -0.2

Output swing headroom (to positive supply) (typ) (V): -0.2 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.6 Vos (offset voltage at 25°C) (max) (mV): 0.01 GBW (typ) (MHz): 1.9 Features: Zero Drift Slew rate (typ) (V/µs): 2.8 Rail-to-rail: In to V-, Out Offset drift (typ) (µV/°C): 0.01 Iq per channel (typ) (mA): 1.5 Vn at 1 kHz (typ) (nV√Hz): 23 CMRR (typ) (dB): 125 Rating: Catalog Operating temperature range (°C): -40 to 85 Input bias current (max) (pA): 60 Iout (typ) (A): 0.003 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): -2.3 Output swing headroom (to negative supply) (typ) (V): 0.1 Output swing headroom (to positive supply) (typ) (V): -0.2

Output swing headroom (to positive supply) (typ) (V): -0.2 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.6 Vos (offset voltage at 25°C) (max) (mV): 0.01 GBW (typ) (MHz): 1.9 Features: Zero Drift Slew rate (typ) (V/µs): 2.8 Rail-to-rail: In to V-, Out Offset drift (typ) (µV/°C): 0.01 Iq per channel (typ) (mA): 1.5 Vn at 1 kHz (typ) (nV√Hz): 23 CMRR (typ) (dB): 125 Rating: Catalog Operating temperature range (°C): 0 to 70 Input bias current (max) (pA): 60 Iout (typ) (A): 0.003 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): -2.3 Output swing headroom (to negative supply) (typ) (V): 0.1 Output swing headroom (to positive supply) (typ) (V): -0.2

Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.4 Vos (offset voltage at 25°C) (max) (mV): 0.85 Offset drift (typ) (µV/°C): 1.1 Input bias current (max) (pA): 60 GBW (typ) (MHz): 0.1 Slew rate (typ) (V/µs): 0.032 Rail-to-rail: In to V- Iq per channel (typ) (mA): 0.01 Vn at 1 kHz (typ) (nV√Hz): 68 CMRR (typ) (dB): 95 Rating: Catalog Operating temperature range (°C): 0 to 70 Iout (typ) (A): 0.01 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -0.8 Output swing headroom (to negative supply) (typ) (V): 0.025 Output swing headroom (to positive supply) (typ) (V): -0.8

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.4 Vos (offset voltage at 25°C) (max) (mV): 0.45 GBW (typ) (MHz): 0.1 Slew rate (typ) (V/µs): 0.032 Rail-to-rail: In to V- Offset drift (typ) (µV/°C): 1.1 Iq per channel (typ) (mA): 0.01 Vn at 1 kHz (typ) (nV√Hz): 68 CMRR (typ) (dB): 95 Rating: Catalog Operating temperature range (°C): -40 to 85 Input bias current (max) (pA): 60 Iout (typ) (A): 0.01 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -0.8 Output swing headroom (to negative supply) (typ) (V): 0.025 Output swing headroom (to positive supply) (typ) (V): -0.8

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 10 Rail-to-rail: Out GBW (typ) (MHz): 6.5 Slew rate (typ) (V/µs): 35 Vos (offset voltage at 25°C) (max) (mV): 1 Iq per channel (typ) (mA): 3 Vn at 1 kHz (typ) (nV√Hz): 13 Rating: Catalog Operating temperature range (°C): -25 to 85 Offset drift (typ) (µV/°C): 3 Input bias current (max) (pA): 2 CMRR (typ) (dB): 100 Iout (typ) (A): 0.02 Architecture: FET Input common mode headroom (to negative supply) (typ) (V): 4 Input common mode headroom (to positive supply) (typ) (V): -2 Output swing headroom (to negative supply) (typ) (V): 2.1 Output swing headroom (to positive supply) (typ) (V): -1.2

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 3 Vos (offset voltage at 25°C) (max) (mV): 0.5 GBW (typ) (MHz): 0.085 Slew rate (typ) (V/µs): 0.03 Rail-to-rail: In to V- Offset drift (typ) (µV/°C): 1.1 Iq per channel (typ) (mA): 0.01 Vn at 1 kHz (typ) (nV√Hz): 68 CMRR (typ) (dB): 94 Rating: Catalog Operating temperature range (°C): -40 to 85 Input bias current (max) (pA): 60 Iout (typ) (A): 0.01 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -0.8 Output swing headroom (to negative supply) (typ) (V): 0 Output swing headroom (to positive supply) (typ) (V): -0.9

Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 3 Vos (offset voltage at 25°C) (max) (mV): 0.9 GBW (typ) (MHz): 0.085 Slew rate (typ) (V/µs): 0.03 Rail-to-rail: In to V- Offset drift (typ) (µV/°C): 1.1 Iq per channel (typ) (mA): 0.01 Vn at 1 kHz (typ) (nV√Hz): 68 CMRR (typ) (dB): 94 Rating: Catalog Operating temperature range (°C): -40 to 85 Input bias current (max) (pA): 60 Iout (typ) (A): 0.01 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -0.8 Output swing headroom (to negative supply) (typ) (V): 0 Output swing headroom (to positive supply) (typ) (V): -0.9