Output swing headroom (to positive supply) (typ) (V): -0.95 THD + N at 1 kHz (typ) (%): 0.00008 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Vos (offset voltage at 25°C) (max) (mV): 0.025 GBW (typ) (MHz): 10 Features: EMI Hardened, High Cload Drive Slew rate (typ) (V/µs): 20 Rail-to-rail: In, Out Offset drift (typ) (µV/°C): 0.1 Iq per channel (typ) (mA): 1 Vn at 1 kHz (typ) (nV√Hz): 5.5 CMRR (typ) (dB): 120 Rating: Catalog Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 20 Iout (typ) (A): 0.065 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.095 Output swing headroom (to positive supply) (typ) (V): -0.95 THD + N at 1 kHz (typ) (%): 0.00008

Output swing headroom (to positive supply) (typ) (V): -0.01 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 10 Slew rate (typ) (V/µs): 10 Vos (offset voltage at 25°C) (max) (mV): 1 Iq per channel (typ) (mA): 1.6 Vn at 1 kHz (typ) (nV√Hz): 7 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 0.3 Features: EMI Hardened Input bias current (max) (pA): 15 CMRR (typ) (dB): 120 Iout (typ) (A): 0.075 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): -2 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.01

Rating: Catalog Operating temperature range (°C): -40 to 125 Rail-to-rail: No Architecture: FET

Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.5 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 5.6 Slew rate (typ) (V/µs): 2 Vos (offset voltage at 25°C) (max) (mV): 3.5 Iq per channel (typ) (mA): 0.25 Vn at 1 kHz (typ) (nV√Hz): 24 Rating: Automotive Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 1 Input bias current (max) (pA): 100000 CMRR (typ) (dB): 90 Iout (typ) (A): 0.04 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -0.7 Output swing headroom (to negative supply) (typ) (V): 0.1 Output swing headroom (to positive supply) (typ) (V): -0.1

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Rail-to-rail: In, Out GBW (typ) (MHz): 1.5 Slew rate (typ) (V/µs): 0.42 Vos (offset voltage at 25°C) (max) (mV): 5.5 Iq per channel (typ) (mA): 0.116 Vn at 1 kHz (typ) (nV√Hz): 50 Rating: Automotive Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 5.5 Input bias current (max) (pA): 35000 CMRR (typ) (dB): 86 Iout (typ) (A): 0.065 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): 0.35 Output swing headroom (to negative supply) (typ) (V): 0.037 Output swing headroom (to positive supply) (typ) (V): -0.033

Output swing headroom (to positive supply) (typ) (V): -0.2 THD + N at 1 kHz (typ) (%): 0.000015 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Vos (offset voltage at 25°C) (max) (mV): 0.175 GBW (typ) (MHz): 45 Features: Shutdown Slew rate (typ) (V/µs): 27 Rail-to-rail: Out Offset drift (typ) (µV/°C): 0.35 Iq per channel (typ) (mA): 3.6 Vn at 1 kHz (typ) (nV√Hz): 1.1 CMRR (typ) (dB): 120 Rating: High Temp Operating temperature range (°C): -55 to 150 Input bias current (max) (pA): 215000 Iout (typ) (A): 0.03 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): 1.8 Input common mode headroom (to positive supply) (typ) (V): -1.4 Output swing headroom (to negative supply) (typ) (V): 0.2 Output swing headroom (to positive supply) (typ) (V): -0.2 THD + N at 1 kHz (typ) (%): 0.000015

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.5 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 5.6 Slew rate (typ) (V/µs): 2 Vos (offset voltage at 25°C) (max) (mV): 3.5 Iq per channel (typ) (mA): 0.25 Vn at 1 kHz (typ) (nV√Hz): 24 Rating: Automotive Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 1 Input bias current (max) (pA): 100000 CMRR (typ) (dB): 90 Iout (typ) (A): 0.04 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -0.7 Output swing headroom (to negative supply) (typ) (V): 0.1 Output swing headroom (to positive supply) (typ) (V): -0.1

Output swing headroom (to positive supply) (typ) (V): -0.01 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Rail-to-rail: In, Out GBW (typ) (MHz): 20 Slew rate (typ) (V/µs): 10 Vos (offset voltage at 25°C) (max) (mV): 2 Iq per channel (typ) (mA): 1.5 Vn at 1 kHz (typ) (nV√Hz): 8.5 Rating: Automotive Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 1.8 Features: EMI Hardened, Zero Crossover Input bias current (max) (pA): 10 CMRR (typ) (dB): 100 Iout (typ) (A): 0.065 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.01

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Vos (offset voltage at 25°C) (max) (mV): 0.09 GBW (typ) (MHz): 0.3 Features: EMI Hardened, Small Size, Zero Drift Slew rate (typ) (V/µs): 0.15 Rail-to-rail: In, Out Offset drift (typ) (µV/°C): 0.05 Iq per channel (typ) (mA): 0.021 Vn at 1 kHz (typ) (nV√Hz): 55 CMRR (typ) (dB): 108 Rating: Catalog Operating temperature range (°C): -40 to 125 Iout (typ) (A): 0.005 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.03 Output swing headroom (to positive supply) (typ) (V): -0.03

Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Vos (offset voltage at 25°C) (max) (mV): 0.09 GBW (typ) (MHz): 0.3 Features: EMI Hardened, Zero Drift Slew rate (typ) (V/µs): 0.15 Rail-to-rail: In, Out Offset drift (typ) (µV/°C): 0.05 Iq per channel (typ) (mA): 0.021 Vn at 1 kHz (typ) (nV√Hz): 55 CMRR (typ) (dB): 108 Rating: Catalog Operating temperature range (°C): -40 to 125 Iout (typ) (A): 0.005 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.03 Output swing headroom (to positive supply) (typ) (V): -0.03