Output swing headroom (to positive supply) (typ) (V): -0.005 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Rail-to-rail: In, Out GBW (typ) (MHz): 3 Slew rate (typ) (V/µs): 1.5 Vos (offset voltage at 25°C) (max) (mV): 2.5 Iq per channel (typ) (mA): 0.15 Vn at 1 kHz (typ) (nV√Hz): 14 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 1 Features: EMI Hardened, Small Size Input bias current (max) (pA): 10 CMRR (typ) (dB): 80 Iout (typ) (A): 0.02 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.2 Input common mode headroom (to positive supply) (typ) (V): 0.2 Output swing headroom (to negative supply) (typ) (V): 0.005 Output swing headroom (to positive supply) (typ) (V): -0.005

Output swing headroom (to positive supply) (typ) (V): -0.01 THD + N at 1 kHz (typ) (%): 0.0005 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Vos (offset voltage at 25°C) (max) (mV): 0.15 GBW (typ) (MHz): 20 Features: EMI Hardened, Shutdown, Zero Crossover Slew rate (typ) (V/µs): 10 Rail-to-rail: In, Out Offset drift (typ) (µV/°C): 1.5 Iq per channel (typ) (mA): 1.45 Vn at 1 kHz (typ) (nV√Hz): 8.5 CMRR (typ) (dB): 114 Rating: Catalog Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 0.9 Iout (typ) (A): 0.065 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.01 THD + N at 1 kHz (typ) (%): 0.0005

Output swing headroom (to positive supply) (typ) (V): -0.01 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Rail-to-rail: In, Out GBW (typ) (MHz): 20 Slew rate (typ) (V/µs): 10 Vos (offset voltage at 25°C) (max) (mV): 2 Iq per channel (typ) (mA): 1.6 Vn at 1 kHz (typ) (nV√Hz): 8.5 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 1.8 Features: Shutdown, Zero Crossover Input bias current (max) (pA): 10 CMRR (typ) (dB): 100 Iout (typ) (A): 0.065 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.01

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 5 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 44 GBW (typ) (MHz): 55 BW at Acl (MHz): 55 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 20 Vn at flatband (typ) (nV√Hz): 2.5 Vn at 1 kHz (typ) (nV√Hz): 2.5 Iq per channel (typ) (mA): 6.25 Vos (offset voltage at 25°C) (max) (mV): 0.4 Rail-to-rail: No Rating: Catalog Operating temperature range (°C): -40 to 125 CMRR (typ) (dB): 115 Input bias current (max) (pA): 200000 Offset drift (typ) (µV/°C): 0.1 Iout (typ) (mA): 42

2nd harmonic (dBc): 81 3rd harmonic (dBc): 93 Frequency of harmonic distortion measurement (MHz): 1 Architecture: FET / CMOS Input, Voltage FB Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 GBW (typ) (MHz): 50 BW at Acl (MHz): 50 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 25 Vn at flatband (typ) (nV√Hz): 4.5 Vn at 1 kHz (typ) (nV√Hz): 4.5 Iq per channel (typ) (mA): 4.6 Vos (offset voltage at 25°C) (max) (mV): 0.2 Rail-to-rail: In, Out Features: Zero Crossover Rating: HiRel Enhanced Product Operating temperature range (°C): -55 to 125 CMRR (typ) (dB): 120 Input bias current (max) (pA): 10 Offset drift (typ) (µV/°C): 1 Iout (typ) (mA): 65 2nd harmonic (dBc): 81 3rd harmonic (dBc): 93 Frequency of harmonic distortion measurement (MHz): 1

Output swing headroom (to positive supply) (typ) (V): -0.22 THD + N at 1 kHz (typ) (%): 0.0001 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4 Vos (offset voltage at 25°C) (max) (mV): 0.025 GBW (typ) (MHz): 2 Features: EMI Hardened, Zero Drift Slew rate (typ) (V/µs): 0.8 Rail-to-rail: In to V-, Out Offset drift (typ) (µV/°C): 0.03 Iq per channel (typ) (mA): 0.415 Vn at 1 kHz (typ) (nV√Hz): 8.8 CMRR (typ) (dB): 134 Rating: Catalog Operating temperature range (°C): -40 to 105 Input bias current (max) (pA): 850 Iout (typ) (A): 0.018 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): -1.5 Output swing headroom (to negative supply) (typ) (V): 0.22 Output swing headroom (to positive supply) (typ) (V): -0.22 THD + N at 1 kHz (typ) (%): 0.0001

Output swing headroom (to positive supply) (typ) (V): -0.35 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 3 Slew rate (typ) (V/µs): 1.5 Vos (offset voltage at 25°C) (max) (mV): 1.8 Iq per channel (typ) (mA): 0.475 Vn at 1 kHz (typ) (nV√Hz): 14 Rating: Automotive Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 0.3 Features: EMI Hardened Input bias current (max) (pA): 15 CMRR (typ) (dB): 120 Iout (typ) (A): 0.025 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): -2 Output swing headroom (to negative supply) (typ) (V): 0.03 Output swing headroom (to positive supply) (typ) (V): -0.35

GBW (typ) (MHz): 17 Slew rate (typ) (V/µs): 40 Vos (offset voltage at 25°C) (max) (mV): 20 Offset drift (typ) (V/°C): 0.00001 Iq per channel (typ) (mA): 39 Features: Adj Current Limit, Shutdown Rating: Automotive Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 100 CMRR (typ) (dB): 80 Rail-to-rail: In to V- Architecture: FET

Output swing headroom (to positive supply) (typ) (V): -0.35 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 3 Slew rate (typ) (V/µs): 1.5 Vos (offset voltage at 25°C) (max) (mV): 1.8 Iq per channel (typ) (mA): 0.475 Vn at 1 kHz (typ) (nV√Hz): 14 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 0.3 Features: EMI Hardened Input bias current (max) (pA): 15 CMRR (typ) (dB): 120 Iout (typ) (A): 0.025 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): -2 Output swing headroom (to negative supply) (typ) (V): 0.03 Output swing headroom (to positive supply) (typ) (V): -0.35

Output swing headroom (to positive supply) (typ) (V): -0.35 Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 3 Slew rate (typ) (V/µs): 1.5 Vos (offset voltage at 25°C) (max) (mV): 1.8 Iq per channel (typ) (mA): 0.475 Vn at 1 kHz (typ) (nV√Hz): 14 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 0.3 Features: EMI Hardened Input bias current (max) (pA): 15 CMRR (typ) (dB): 120 Iout (typ) (A): 0.025 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): -2 Output swing headroom (to negative supply) (typ) (V): 0.03 Output swing headroom (to positive supply) (typ) (V): -0.35