OPA310
数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 运算放大器
描述: 单通道、5.5V、3MHz 高输出电流 (150mA) 快速关断 (1μs) 运算放大器
Number of channels: 1
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.5
Rail-to-rail: In, Out
GBW (typ) (MHz): 3
Slew rate (typ) (V/µs): 3
Vos (offset voltage at 25°C) (max) (mV): 1.3
Iq per channel (typ) (mA): 0.165
Vn at 1 kHz (typ) (nV√Hz): 16
Rating: Catalog
Operating temperature range (°C): -40 to 125
Offset drift (typ) (µV/°C): 0.5
Features: Shutdown, Small Size
Input bias current (max) (pA): 30
CMRR (typ) (dB): 95
Iout (typ) (A): 0.15
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.1
Input common mode headroom (to positive supply) (typ) (V): 0.1
Output swing headroom (to negative supply) (typ) (V): 0.001
更多
Output swing headroom (to positive supply) (typ) (V): -0.001
Number of channels: 1
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.5
Rail-to-rail: In, Out
GBW (typ) (MHz): 3
Slew rate (typ) (V/µs): 3
Vos (offset voltage at 25°C) (max) (mV): 1.3
Iq per channel (typ) (mA): 0.165
Vn at 1 kHz (typ) (nV√Hz): 16
Rating: Catalog
Operating temperature range (°C): -40 to 125
Offset drift (typ) (µV/°C): 0.5
Features: Shutdown, Small Size
Input bias current (max) (pA): 30
CMRR (typ) (dB): 95
Iout (typ) (A): 0.15
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.1
Input common mode headroom (to positive supply) (typ) (V): 0.1
Output swing headroom (to negative supply) (typ) (V): 0.001
Output swing headroom (to positive supply) (typ) (V): -0.001
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 3
Rail-to-rail: In to V-
GBW (typ) (MHz): 1.2
Slew rate (typ) (V/µs): 0.5
Vos (offset voltage at 25°C) (max) (mV): 3
Iq per channel (typ) (mA): 0.175
Vn at 1 kHz (typ) (nV√Hz): 35
Rating: Catalog
Operating temperature range (°C): -40 to 125
Offset drift (typ) (µV/°C): 7
Features: Cost Optimized, EMI Hardened, Standard Amps
Input bias current (max) (pA): 35000
CMRR (typ) (dB): 80
Iout (typ) (A): 0.04
Architecture: Bipolar
Input common mode headroom (to negative supply) (typ) (V): 0
Input common mode headroom (to positive supply) (typ) (V): -1.5
Output swing headroom (to negative supply) (typ) (V): 0.005
更多
Output swing headroom (to positive supply) (typ) (V): -1.4
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 3
Rail-to-rail: In to V-
GBW (typ) (MHz): 1.2
Slew rate (typ) (V/µs): 0.5
Vos (offset voltage at 25°C) (max) (mV): 3
Iq per channel (typ) (mA): 0.175
Vn at 1 kHz (typ) (nV√Hz): 35
Rating: Catalog
Operating temperature range (°C): -40 to 125
Offset drift (typ) (µV/°C): 7
Features: Cost Optimized, EMI Hardened, Standard Amps
Input bias current (max) (pA): 35000
CMRR (typ) (dB): 80
Iout (typ) (A): 0.04
Architecture: Bipolar
Input common mode headroom (to negative supply) (typ) (V): 0
Input common mode headroom (to positive supply) (typ) (V): -1.5
Output swing headroom (to negative supply) (typ) (V): 0.005
Output swing headroom (to positive supply) (typ) (V): -1.4
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 3
Rail-to-rail: In to V-
GBW (typ) (MHz): 1.2
Slew rate (typ) (V/µs): 0.5
Vos (offset voltage at 25°C) (max) (mV): 3
Iq per channel (typ) (mA): 0.175
Vn at 1 kHz (typ) (nV√Hz): 35
Rating: Catalog
Operating temperature range (°C): -40 to 85
Offset drift (typ) (µV/°C): 7
Features: Cost Optimized, EMI Hardened, Standard Amps
Input bias current (max) (pA): 35000
CMRR (typ) (dB): 80
Iout (typ) (A): 0.04
Architecture: Bipolar
Input common mode headroom (to negative supply) (typ) (V): 0
Input common mode headroom (to positive supply) (typ) (V): -1.5
Output swing headroom (to negative supply) (typ) (V): 0.005
更多
Output swing headroom (to positive supply) (typ) (V): -1.4
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 3
Rail-to-rail: In to V-
GBW (typ) (MHz): 1.2
Slew rate (typ) (V/µs): 0.5
Vos (offset voltage at 25°C) (max) (mV): 3
Iq per channel (typ) (mA): 0.175
Vn at 1 kHz (typ) (nV√Hz): 35
Rating: Catalog
Operating temperature range (°C): -40 to 85
Offset drift (typ) (µV/°C): 7
Features: Cost Optimized, EMI Hardened, Standard Amps
Input bias current (max) (pA): 35000
CMRR (typ) (dB): 80
Iout (typ) (A): 0.04
Architecture: Bipolar
Input common mode headroom (to negative supply) (typ) (V): 0
Input common mode headroom (to positive supply) (typ) (V): -1.5
Output swing headroom (to negative supply) (typ) (V): 0.005
Output swing headroom (to positive supply) (typ) (V): -1.4
OPA4310
数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 运算放大器
描述: 四通道、5.5V、3MHz 高输出电流 (150mA) 快速关断 (1μs) 运算放大器
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.5
Rail-to-rail: In, Out
GBW (typ) (MHz): 3
Slew rate (typ) (V/µs): 3
Vos (offset voltage at 25°C) (max) (mV): 1.3
Iq per channel (typ) (mA): 0.165
Vn at 1 kHz (typ) (nV√Hz): 16
Rating: Catalog
Operating temperature range (°C): -40 to 125
Offset drift (typ) (µV/°C): 0.5
Features: Shutdown, Small Size
Input bias current (max) (pA): 30
CMRR (typ) (dB): 95
Iout (typ) (A): 0.15
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.1
Input common mode headroom (to positive supply) (typ) (V): 0.1
Output swing headroom (to negative supply) (typ) (V): 0.001
更多
Output swing headroom (to positive supply) (typ) (V): -0.001
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.5
Rail-to-rail: In, Out
GBW (typ) (MHz): 3
Slew rate (typ) (V/µs): 3
Vos (offset voltage at 25°C) (max) (mV): 1.3
Iq per channel (typ) (mA): 0.165
Vn at 1 kHz (typ) (nV√Hz): 16
Rating: Catalog
Operating temperature range (°C): -40 to 125
Offset drift (typ) (µV/°C): 0.5
Features: Shutdown, Small Size
Input bias current (max) (pA): 30
CMRR (typ) (dB): 95
Iout (typ) (A): 0.15
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.1
Input common mode headroom (to positive supply) (typ) (V): 0.1
Output swing headroom (to negative supply) (typ) (V): 0.001
Output swing headroom (to positive supply) (typ) (V): -0.001
Number of channels: 1
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5
Vos (offset voltage at 25°C) (max) (mV): 0.025
GBW (typ) (MHz): 3.6
Features: Super Beta, e-Trim™
Slew rate (typ) (V/µs): 3.2
Rail-to-rail: Out
Offset drift (typ) (µV/°C): 0.08
Iq per channel (typ) (mA): 0.22
Vn at 1 kHz (typ) (nV√Hz): 7.2
CMRR (typ) (dB): 140
Rating: Catalog
Operating temperature range (°C): -40 to 125
Input bias current (max) (pA): 500
Iout (typ) (A): 0.025
Architecture: Bipolar
Input common mode headroom (to negative supply) (typ) (V): 1
Input common mode headroom (to positive supply) (typ) (V): -1.4
Output swing headroom (to negative supply) (typ) (V): 0.2
更多
Output swing headroom (to positive supply) (typ) (V): -0.2
THD + N at 1 kHz (typ) (%): 0.0004
Number of channels: 1
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5
Vos (offset voltage at 25°C) (max) (mV): 0.025
GBW (typ) (MHz): 3.6
Features: Super Beta, e-Trim™
Slew rate (typ) (V/µs): 3.2
Rail-to-rail: Out
Offset drift (typ) (µV/°C): 0.08
Iq per channel (typ) (mA): 0.22
Vn at 1 kHz (typ) (nV√Hz): 7.2
CMRR (typ) (dB): 140
Rating: Catalog
Operating temperature range (°C): -40 to 125
Input bias current (max) (pA): 500
Iout (typ) (A): 0.025
Architecture: Bipolar
Input common mode headroom (to negative supply) (typ) (V): 1
Input common mode headroom (to positive supply) (typ) (V): -1.4
Output swing headroom (to negative supply) (typ) (V): 0.2
Output swing headroom (to positive supply) (typ) (V): -0.2
THD + N at 1 kHz (typ) (%): 0.0004
Number of channels: 2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 24
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5
Vos (offset voltage at 25°C) (max) (mV): 0.01
GBW (typ) (MHz): 0.75
Features: Cost Optimized, EMI Hardened, Zero Drift
Slew rate (typ) (V/µs): 0.35
Rail-to-rail: In, Out
Offset drift (typ) (µV/°C): 0.01
Iq per channel (typ) (mA): 0.09
Vn at 1 kHz (typ) (nV√Hz): 38
CMRR (typ) (dB): 134
Rating: Catalog
Operating temperature range (°C): -40 to 125
Input bias current (max) (pA): 30
Iout (typ) (A): 0.02
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.1
Input common mode headroom (to positive supply) (typ) (V): 0.1
Output swing headroom (to negative supply) (typ) (V): 0.06
更多
Output swing headroom (to positive supply) (typ) (V): 0.06
THD + N at 1 kHz (typ) (%): 0.001
Number of channels: 2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 24
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5
Vos (offset voltage at 25°C) (max) (mV): 0.01
GBW (typ) (MHz): 0.75
Features: Cost Optimized, EMI Hardened, Zero Drift
Slew rate (typ) (V/µs): 0.35
Rail-to-rail: In, Out
Offset drift (typ) (µV/°C): 0.01
Iq per channel (typ) (mA): 0.09
Vn at 1 kHz (typ) (nV√Hz): 38
CMRR (typ) (dB): 134
Rating: Catalog
Operating temperature range (°C): -40 to 125
Input bias current (max) (pA): 30
Iout (typ) (A): 0.02
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.1
Input common mode headroom (to positive supply) (typ) (V): 0.1
Output swing headroom (to negative supply) (typ) (V): 0.06
Output swing headroom (to positive supply) (typ) (V): 0.06
THD + N at 1 kHz (typ) (%): 0.001
Architecture: Current FB
Number of channels: 2
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 13
GBW (typ) (MHz): 730
BW at Acl (MHz): 730
Acl, min spec gain (V/V): 1
Slew rate (typ) (V/µs): 3000
Vn at flatband (typ) (nV√Hz): 2.4
Vn at 1 kHz (typ) (nV√Hz): 2.4
Iq per channel (typ) (mA): 16.5
Vos (offset voltage at 25°C) (max) (mV): 5
Rail-to-rail: No
Features: Adjustable BW/IQ/IOUT, Shutdown
Rating: Catalog
Operating temperature range (°C): -40 to 85
CMRR (typ) (dB): 64
Input bias current (max) (pA): 25000000
Offset drift (typ) (µV/°C): 3
Iout (typ) (mA): 1000
更多
2nd harmonic (dBc): 70
3rd harmonic (dBc): 73
Frequency of harmonic distortion measurement (MHz): 10
Architecture: Current FB
Number of channels: 2
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 13
GBW (typ) (MHz): 730
BW at Acl (MHz): 730
Acl, min spec gain (V/V): 1
Slew rate (typ) (V/µs): 3000
Vn at flatband (typ) (nV√Hz): 2.4
Vn at 1 kHz (typ) (nV√Hz): 2.4
Iq per channel (typ) (mA): 16.5
Vos (offset voltage at 25°C) (max) (mV): 5
Rail-to-rail: No
Features: Adjustable BW/IQ/IOUT, Shutdown
Rating: Catalog
Operating temperature range (°C): -40 to 85
CMRR (typ) (dB): 64
Input bias current (max) (pA): 25000000
Offset drift (typ) (µV/°C): 3
Iout (typ) (mA): 1000
2nd harmonic (dBc): 70
3rd harmonic (dBc): 73
Frequency of harmonic distortion measurement (MHz): 10
Number of channels: 2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.2
Vos (offset voltage at 25°C) (max) (mV): 0.05
GBW (typ) (MHz): 40
Features: EMI Hardened, Zero Crossover, e-Trim™
Slew rate (typ) (V/µs): 30
Rail-to-rail: In, Out
Offset drift (typ) (µV/°C): 0.15
Iq per channel (typ) (mA): 3.8
Vn at 1 kHz (typ) (nV√Hz): 9.8
CMRR (typ) (dB): 120
Rating: Catalog
Operating temperature range (°C): -40 to 125
Input bias current (max) (pA): 1
Iout (typ) (A): 0.065
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.1
Input common mode headroom (to positive supply) (typ) (V): -0.1
Output swing headroom (to negative supply) (typ) (V): 0.005
更多
Output swing headroom (to positive supply) (typ) (V): 0.005
THD + N at 1 kHz (typ) (%): 0.0001
Number of channels: 2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.2
Vos (offset voltage at 25°C) (max) (mV): 0.05
GBW (typ) (MHz): 40
Features: EMI Hardened, Zero Crossover, e-Trim™
Slew rate (typ) (V/µs): 30
Rail-to-rail: In, Out
Offset drift (typ) (µV/°C): 0.15
Iq per channel (typ) (mA): 3.8
Vn at 1 kHz (typ) (nV√Hz): 9.8
CMRR (typ) (dB): 120
Rating: Catalog
Operating temperature range (°C): -40 to 125
Input bias current (max) (pA): 1
Iout (typ) (A): 0.065
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.1
Input common mode headroom (to positive supply) (typ) (V): -0.1
Output swing headroom (to negative supply) (typ) (V): 0.005
Output swing headroom (to positive supply) (typ) (V): 0.005
THD + N at 1 kHz (typ) (%): 0.0001
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 18
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5
Vos (offset voltage at 25°C) (max) (mV): 0.12
GBW (typ) (MHz): 11
Slew rate (typ) (V/µs): 20
Rail-to-rail: Out
Offset drift (typ) (µV/°C): 0.35
Iq per channel (typ) (mA): 1.8
Vn at 1 kHz (typ) (nV√Hz): 5.8
CMRR (typ) (dB): 140
Rating: Space
Operating temperature range (°C): -55 to 125
Input bias current (max) (pA): 10
Iout (typ) (A): 0.03
Architecture: FET
Input common mode headroom (to negative supply) (typ) (V): -0.1
Input common mode headroom (to positive supply) (typ) (V): -3.5
Output swing headroom (to negative supply) (typ) (V): 0.2
Output swing headroom (to positive supply) (typ) (V): -0.2
更多
THD + N at 1 kHz (typ) (%): 0.00005
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 18
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5
Vos (offset voltage at 25°C) (max) (mV): 0.12
GBW (typ) (MHz): 11
Slew rate (typ) (V/µs): 20
Rail-to-rail: Out
Offset drift (typ) (µV/°C): 0.35
Iq per channel (typ) (mA): 1.8
Vn at 1 kHz (typ) (nV√Hz): 5.8
CMRR (typ) (dB): 140
Rating: Space
Operating temperature range (°C): -55 to 125
Input bias current (max) (pA): 10
Iout (typ) (A): 0.03
Architecture: FET
Input common mode headroom (to negative supply) (typ) (V): -0.1
Input common mode headroom (to positive supply) (typ) (V): -3.5
Output swing headroom (to negative supply) (typ) (V): 0.2
Output swing headroom (to positive supply) (typ) (V): -0.2
THD + N at 1 kHz (typ) (%): 0.00005
OPA2310
数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 运算放大器
描述: 双通道、5.5V、3MHz、高输出电流 (150mA)、快速关断 (1μs) 运算放大器
Number of channels: 2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.5
Rail-to-rail: In, Out
GBW (typ) (MHz): 3
Slew rate (typ) (V/µs): 3
Vos (offset voltage at 25°C) (max) (mV): 1.3
Iq per channel (typ) (mA): 0.165
Vn at 1 kHz (typ) (nV√Hz): 16
Rating: Catalog
Operating temperature range (°C): -40 to 125
Offset drift (typ) (µV/°C): 0.5
Features: Shutdown, Small Size
Input bias current (max) (pA): 30
CMRR (typ) (dB): 95
Iout (typ) (A): 0.15
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.1
Input common mode headroom (to positive supply) (typ) (V): 0.1
Output swing headroom (to negative supply) (typ) (V): 0.001
更多
Output swing headroom (to positive supply) (typ) (V): -0.001
Number of channels: 2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.5
Rail-to-rail: In, Out
GBW (typ) (MHz): 3
Slew rate (typ) (V/µs): 3
Vos (offset voltage at 25°C) (max) (mV): 1.3
Iq per channel (typ) (mA): 0.165
Vn at 1 kHz (typ) (nV√Hz): 16
Rating: Catalog
Operating temperature range (°C): -40 to 125
Offset drift (typ) (µV/°C): 0.5
Features: Shutdown, Small Size
Input bias current (max) (pA): 30
CMRR (typ) (dB): 95
Iout (typ) (A): 0.15
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.1
Input common mode headroom (to positive supply) (typ) (V): 0.1
Output swing headroom (to negative supply) (typ) (V): 0.001
Output swing headroom (to positive supply) (typ) (V): -0.001