Rating: Automotive
Architecture: Integrated FET
Control topology: Sensorless, Sinusoidal
Control interface: 1xPWM, Analog, Serial
Vs (min) (V): 6.2
Vs ABS (max) (V): 45
Operating temperature range (°C): -40 to 125
Rating: Automotive
Architecture: Integrated FET
Control topology: Sensorless, Sinusoidal
Control interface: 1xPWM, Analog, Serial
Vs (min) (V): 6.2
Vs ABS (max) (V): 45
Operating temperature range (°C): -40 to 125
Number of full bridges: 1
Vs (min) (V): 4.5
Vs ABS (max) (V): 40
RDS(ON) (HS + LS) (mΩ): 700
Sleep current (µA): 0.75
Control mode: Independent 1/2-Bridge, PWM
Control interface: Hardware (GPIO)
Rating: Catalog
Operating temperature range (°C): -40 to 125
Number of full bridges: 1
Vs (min) (V): 4.5
Vs ABS (max) (V): 40
RDS(ON) (HS + LS) (mΩ): 700
Sleep current (µA): 0.75
Control mode: Independent 1/2-Bridge, PWM
Control interface: Hardware (GPIO)
Rating: Catalog
Operating temperature range (°C): -40 to 125
Rating: Catalog
Architecture: Gate driver
Control interface: 1xPWM, 3xPWM, 6xPWM
Gate drive (A): 1
Vs (min) (V): 9
Vs ABS (max) (V): 102
Operating temperature range (°C): -40 to 125
Rating: Catalog
Architecture: Gate driver
Control interface: 1xPWM, 3xPWM, 6xPWM
Gate drive (A): 1
Vs (min) (V): 9
Vs ABS (max) (V): 102
Operating temperature range (°C): -40 to 125
Rating: Catalog
Architecture: Gate driver
Control interface: 1xPWM, 3xPWM, 6xPWM
Gate drive (A): 1
Vs (min) (V): 9
Vs ABS (max) (V): 102
Features: Hardware Management I/F, SPI/I2C, Smart Gate Drive
Operating temperature range (°C): -40 to 125
Rating: Catalog
Architecture: Gate driver
Control interface: 1xPWM, 3xPWM, 6xPWM
Gate drive (A): 1
Vs (min) (V): 9
Vs ABS (max) (V): 102
Features: Hardware Management I/F, SPI/I2C, Smart Gate Drive
Operating temperature range (°C): -40 to 125
Rating: Automotive
Architecture: Gate driver
Control interface: 1xPWM, 3xPWM, 6xPWM
Gate drive (A): 1
Vs (min) (V): 5.5
Vs ABS (max) (V): 65
Operating temperature range (°C): -40 to 125
Rating: Automotive
Architecture: Gate driver
Control interface: 1xPWM, 3xPWM, 6xPWM
Gate drive (A): 1
Vs (min) (V): 5.5
Vs ABS (max) (V): 65
Operating temperature range (°C): -40 to 125
Number of full bridges: 1
Vs (min) (V): 4.5
Vs ABS (max) (V): 40
Peak output current (A): 3.5
RDS(ON) (HS + LS) (mΩ): 700
Sleep current (µA): 0.75
Control mode: Independent 1/2-Bridge, PH/EN, PWM
Control interface: Hardware (GPIO)
Features: Current sense Amplifier, Integrated Current Sensing
Rating: Catalog
Operating temperature range (°C): -40 to 125
Number of full bridges: 1
Vs (min) (V): 4.5
Vs ABS (max) (V): 40
Peak output current (A): 3.5
RDS(ON) (HS + LS) (mΩ): 700
Sleep current (µA): 0.75
Control mode: Independent 1/2-Bridge, PH/EN, PWM
Control interface: Hardware (GPIO)
Features: Current sense Amplifier, Integrated Current Sensing
更多
Rating: Catalog
Operating temperature range (°C): -40 to 125
Bootstrap supply voltage (max) (V): 110
Power switch: MOSFET
Input supply voltage (min) (V): 6
Input supply voltage (max) (V): 16
Peak output current (A): 2.6
Operating temperature range (°C): -40 to 125
Undervoltage lockout (typ) (V): 5
Rating: Catalog
Propagation delay time (µs): 0.02
Rise time (ns): 11
Fall time (ns): 8
Iq (mA): 0.00028
Input threshold: TTL
Channel input logic: TTL
Switch node voltage (V): -5
Features: Enable, Interlock
Driver configuration: Dual inputs
Bootstrap supply voltage (max) (V): 110
Power switch: MOSFET
Input supply voltage (min) (V): 6
更多
Input supply voltage (max) (V): 16
Peak output current (A): 2.6
Operating temperature range (°C): -40 to 125
Undervoltage lockout (typ) (V): 5
Rating: Catalog
Propagation delay time (µs): 0.02
Rise time (ns): 11
Fall time (ns): 8
Iq (mA): 0.00028
Input threshold: TTL
Channel input logic: TTL
Switch node voltage (V): -5
Features: Enable, Interlock
Driver configuration: Dual inputs
Rating: Automotive
Architecture: Gate driver
Control interface: 1xPWM, 3xPWM, 6xPWM
Gate drive (A): 1
Vs (min) (V): 5.5
Vs ABS (max) (V): 65
Operating temperature range (°C): -40 to 125
Rating: Automotive
Architecture: Gate driver
Control interface: 1xPWM, 3xPWM, 6xPWM
Gate drive (A): 1
Vs (min) (V): 5.5
Vs ABS (max) (V): 65
Operating temperature range (°C): -40 to 125
Rating: Automotive
Architecture: Gate driver
Control interface: 1xPWM, 3xPWM, 6xPWM
Gate drive (A): 1
Vs (min) (V): 4.5
Vs ABS (max) (V): 45
Operating temperature range (°C): -40 to 150
TI functional safety category: Functional Safety-Compliant
Rating: Automotive
Architecture: Gate driver
Control interface: 1xPWM, 3xPWM, 6xPWM
Gate drive (A): 1
Vs (min) (V): 4.5
Vs ABS (max) (V): 45
Operating temperature range (°C): -40 to 150
TI functional safety category: Functional Safety-Compliant
LMG1210
数据:
分类: 微电路 / 半导体集成电路 / 接口电路 / 驱动器
描述: 适用于 GaNFET 和 MOSFET、具有 5V UVLO 和可编程死区时间的 1.5A、3A 200V 半桥栅极驱动器
Bootstrap supply voltage (max) (V): 300
Power switch: GaNFET, MOSFET
Input supply voltage (min) (V): 6
Input supply voltage (max) (V): 18
Peak output current (A): 3
Operating temperature range (°C): -40 to 125
Undervoltage lockout (typ) (V): 4
Rating: Catalog
Propagation delay time (µs): 0.01
Rise time (ns): 0.5
Fall time (ns): 0.5
Iq (mA): 0.3
Input threshold: TTL
Channel input logic: TTL/PWM
Features: Dead time control, Internal LDO
Driver configuration: Half bridge
Bootstrap supply voltage (max) (V): 300
Power switch: GaNFET, MOSFET
Input supply voltage (min) (V): 6
Input supply voltage (max) (V): 18
更多
Peak output current (A): 3
Operating temperature range (°C): -40 to 125
Undervoltage lockout (typ) (V): 4
Rating: Catalog
Propagation delay time (µs): 0.01
Rise time (ns): 0.5
Fall time (ns): 0.5
Iq (mA): 0.3
Input threshold: TTL
Channel input logic: TTL/PWM
Features: Dead time control, Internal LDO
Driver configuration: Half bridge