UCC21710


数据:
分类: 微电路 / 半导体集成电路 / 接口电路 / 驱动器

描述: 适用于 IGBT/SiC MOSFET、具有 OC 检测和内部钳位的 5.7kVrms ±10A 单通道隔离式栅极驱动器

Number of channels: 1 Isolation rating: Reinforced Withstand isolation voltage (VISO) (Vrms): 5700 Working isolation voltage (VIOWM) (Vrms): 2121 Transient isolation voltage (VIOTM) (VPK): 8000 Power switch: IGBT, SiCFET Peak output current (A): 10 Output VCC/VDD (max) (V): 33 Output VCC/VDD (min) (V): 13 Input supply voltage (min) (V): 3 Input supply voltage (max) (V): 5.5 Propagation delay time (µs): 0.09 Input threshold: CMOS Operating temperature range (°C): -40 to 125 Rating: Catalog Bootstrap supply voltage (max) (V): 800 Rise time (ns): 33 Fall time (ns): 27 Undervoltage lockout (typ) (V): 12 Number of channels: 1
Isolation rating: Reinforced Withstand isolation voltage (VISO) (Vrms): 5700 Working isolation voltage (VIOWM) (Vrms): 2121 Transient isolation voltage (VIOTM) (VPK): 8000 Power switch: IGBT, SiCFET Peak output current (A): 10 Output VCC/VDD (max) (V): 33 Output VCC/VDD (min) (V): 13 Input supply voltage (min) (V): 3 Input supply voltage (max) (V): 5.5 Propagation delay time (µs): 0.09 Input threshold: CMOS Operating temperature range (°C): -40 to 125 Rating: Catalog Bootstrap supply voltage (max) (V): 800 Rise time (ns): 33 Fall time (ns): 27 Undervoltage lockout (typ) (V): 12

UCC5870-Q1


数据:
分类: 微电路 / 半导体集成电路 / 接口电路 / 驱动器

描述: 适用于 IGBT/SiC 的汽车级 3.75kVrms 30A 单通道功能安全隔离式栅极驱动器

Number of channels: 1 Isolation rating: Basic Withstand isolation voltage (VISO) (Vrms): 3750 Working isolation voltage (VIOWM) (Vrms): 1000 Transient isolation voltage (VIOTM) (VPK): 5250 TI functional safety category: Functional Safety-Compliant Power switch: IGBT, SiCFET Peak output current (A): 30 Output VCC/VDD (max) (V): 30 Output VCC/VDD (min) (V): 15 Input supply voltage (min) (V): 3 Input supply voltage (max) (V): 5.5 Propagation delay time (µs): 0.15 Input threshold: CMOS Operating temperature range (°C): -40 to 125 Rating: Automotive Bootstrap supply voltage (max) (V): 1000 Rise time (ns): 150 Fall time (ns): 150 Undervoltage lockout (typ) (V): Programmable
Number of channels: 1 Isolation rating: Basic Withstand isolation voltage (VISO) (Vrms): 3750 Working isolation voltage (VIOWM) (Vrms): 1000 Transient isolation voltage (VIOTM) (VPK): 5250 TI functional safety category: Functional Safety-Compliant Power switch: IGBT, SiCFET Peak output current (A): 30 Output VCC/VDD (max) (V): 30 Output VCC/VDD (min) (V): 15 Input supply voltage (min) (V): 3 Input supply voltage (max) (V): 5.5 Propagation delay time (µs): 0.15 Input threshold: CMOS Operating temperature range (°C): -40 to 125 Rating: Automotive Bootstrap supply voltage (max) (V): 1000 Rise time (ns): 150 Fall time (ns): 150 Undervoltage lockout (typ) (V): Programmable

UCC21732


数据:
分类: 微电路 / 半导体集成电路 / 接口电路 / 驱动器

描述: 适用于 IGBT/SiC FET 且具有 2 级关断的 5.7kVrms ±10A 单通道隔离式栅极驱动器

Number of channels: 1 Isolation rating: Reinforced Withstand isolation voltage (VISO) (Vrms): 5700 Working isolation voltage (VIOWM) (Vrms): 2121 Transient isolation voltage (VIOTM) (VPK): 8000 Power switch: IGBT, SiCFET Peak output current (A): 10 Output VCC/VDD (max) (V): 33 Output VCC/VDD (min) (V): 13 Input supply voltage (min) (V): 3 Input supply voltage (max) (V): 5.5 Propagation delay time (µs): 0.09 Input threshold: CMOS Operating temperature range (°C): -40 to 125 Rating: Catalog Bootstrap supply voltage (max) (V): 800 Rise time (ns): 28 Fall time (ns): 24 Undervoltage lockout (typ) (V): 12 Number of channels: 1
Isolation rating: Reinforced Withstand isolation voltage (VISO) (Vrms): 5700 Working isolation voltage (VIOWM) (Vrms): 2121 Transient isolation voltage (VIOTM) (VPK): 8000 Power switch: IGBT, SiCFET Peak output current (A): 10 Output VCC/VDD (max) (V): 33 Output VCC/VDD (min) (V): 13 Input supply voltage (min) (V): 3 Input supply voltage (max) (V): 5.5 Propagation delay time (µs): 0.09 Input threshold: CMOS Operating temperature range (°C): -40 to 125 Rating: Catalog Bootstrap supply voltage (max) (V): 800 Rise time (ns): 28 Fall time (ns): 24 Undervoltage lockout (typ) (V): 12

UCC21540-Q1


数据:
分类: 微电路 / 半导体集成电路 / 接口电路 / 驱动器

描述: 具有 8V UVLO 和 3.3mm 通道间距的汽车级 5.7kVRMS、4A/6A 双通道隔离式栅极驱动器

Number of channels: 2 Isolation rating: Reinforced Withstand isolation voltage (VISO) (Vrms): 5700 Working isolation voltage (VIOWM) (Vrms): 1414 Transient isolation voltage (VIOTM) (VPK): 8000 TI functional safety category: Functional Safety Quality-Managed Power switch: IGBT, MOSFET Peak output current (A): 6 Features: Disable, Programmable dead time Output VCC/VDD (max) (V): 18 Output VCC/VDD (min) (V): 9.2 Input supply voltage (min) (V): 3 Input supply voltage (max) (V): 5.5 Propagation delay time (µs): 0.028 Input threshold: CMOS, TTL Operating temperature range (°C): -40 to 125 Rating: Automotive Bootstrap supply voltage (max) (V): 1414 Rise time (ns): 5 Fall time (ns): 6
Undervoltage lockout (typ) (V): 8 Number of channels: 2 Isolation rating: Reinforced Withstand isolation voltage (VISO) (Vrms): 5700 Working isolation voltage (VIOWM) (Vrms): 1414 Transient isolation voltage (VIOTM) (VPK): 8000 TI functional safety category: Functional Safety Quality-Managed Power switch: IGBT, MOSFET Peak output current (A): 6 Features: Disable, Programmable dead time Output VCC/VDD (max) (V): 18 Output VCC/VDD (min) (V): 9.2 Input supply voltage (min) (V): 3 Input supply voltage (max) (V): 5.5 Propagation delay time (µs): 0.028 Input threshold: CMOS, TTL Operating temperature range (°C): -40 to 125 Rating: Automotive Bootstrap supply voltage (max) (V): 1414 Rise time (ns): 5 Fall time (ns): 6 Undervoltage lockout (typ) (V): 8

UCC5350-Q1


数据:
分类: 微电路 / 半导体集成电路 / 接口电路 / 驱动器

描述: Automotive ±5A single-channel isolated gate driver with Miller clamp or split outputs for SiC/IGBT

Number of channels: 1 Isolation rating: Basic, Reinforced Withstand isolation voltage (VISO) (Vrms): 3000, 5000 Working isolation voltage (VIOWM) (Vrms): 990, 2121 Transient isolation voltage (VIOTM) (VPK): 4242, 7000 TI functional safety category: Functional Safety-Capable Power switch: IGBT, MOSFET, SiCFET Peak output current (A): 10 Features: Active miller clamp, Split output Output VCC/VDD (max) (V): 33 Output VCC/VDD (min) (V): 9.5 Input supply voltage (min) (V): 3 Input supply voltage (max) (V): 15 Propagation delay time (µs): 0.065 Input threshold: CMOS Operating temperature range (°C): -40 to 125 Rating: Automotive, Catalog Bootstrap supply voltage (max) (V): 990 Rise time (ns): 10 Fall time (ns): 10
Undervoltage lockout (typ) (V): 8, 12 Number of channels: 1 Isolation rating: Basic, Reinforced Withstand isolation voltage (VISO) (Vrms): 3000, 5000 Working isolation voltage (VIOWM) (Vrms): 990, 2121 Transient isolation voltage (VIOTM) (VPK): 4242, 7000 TI functional safety category: Functional Safety-Capable Power switch: IGBT, MOSFET, SiCFET Peak output current (A): 10 Features: Active miller clamp, Split output Output VCC/VDD (max) (V): 33 Output VCC/VDD (min) (V): 9.5 Input supply voltage (min) (V): 3 Input supply voltage (max) (V): 15 Propagation delay time (µs): 0.065 Input threshold: CMOS Operating temperature range (°C): -40 to 125 Rating: Automotive, Catalog Bootstrap supply voltage (max) (V): 990 Rise time (ns): 10 Fall time (ns): 10 Undervoltage lockout (typ) (V): 8, 12

UCC21739-Q1


数据:
分类: 微电路 / 半导体集成电路 / 接口电路 / 驱动器

描述: 适用于 IGBT/SiC MOSFET 且具有隔离式模拟检测的汽车类 3kVrms ±10A 单通道隔离式栅极驱动器

Number of channels: 1 Isolation rating: Basic Withstand isolation voltage (VISO) (Vrms): 3000 Working isolation voltage (VIOWM) (Vrms): 990, 2121 Transient isolation voltage (VIOTM) (VPK): 4242, 8400 Power switch: IGBT, SiCFET Peak output current (A): 10 Output VCC/VDD (max) (V): 33 Output VCC/VDD (min) (V): 13 Input supply voltage (min) (V): 3 Input supply voltage (max) (V): 5.5 Propagation delay time (µs): 0.09 Input threshold: CMOS Operating temperature range (°C): -40 to 125 Rating: Automotive Bootstrap supply voltage (max) (V): 990 Rise time (ns): 33 Fall time (ns): 27 Undervoltage lockout (typ) (V): 12 Number of channels: 1
Isolation rating: Basic Withstand isolation voltage (VISO) (Vrms): 3000 Working isolation voltage (VIOWM) (Vrms): 990, 2121 Transient isolation voltage (VIOTM) (VPK): 4242, 8400 Power switch: IGBT, SiCFET Peak output current (A): 10 Output VCC/VDD (max) (V): 33 Output VCC/VDD (min) (V): 13 Input supply voltage (min) (V): 3 Input supply voltage (max) (V): 5.5 Propagation delay time (µs): 0.09 Input threshold: CMOS Operating temperature range (°C): -40 to 125 Rating: Automotive Bootstrap supply voltage (max) (V): 990 Rise time (ns): 33 Fall time (ns): 27 Undervoltage lockout (typ) (V): 12

UCC5304


数据:
分类: 微电路 / 半导体集成电路 / 接口电路 / 驱动器

描述: 适用于 GaNFET 和 MOSFET 且具有 5V UVLO 的 5kVrms、4A/6A 单通道隔离式栅极驱动器

Number of channels: 1 Isolation rating: Reinforced Withstand isolation voltage (VISO) (Vrms): 5700 Working isolation voltage (VIOWM) (Vrms): 1414 Transient isolation voltage (VIOTM) (VPK): 8000 Power switch: GaNFET, MOSFET Peak output current (A): 6 Features: High CMTI Output VCC/VDD (max) (V): 18 Output VCC/VDD (min) (V): 6 Input supply voltage (min) (V): 3 Input supply voltage (max) (V): 5.5 Propagation delay time (µs): 0.028 Input threshold: CMOS, TTL Operating temperature range (°C): -40 to 125 Rating: Catalog Bootstrap supply voltage (max) (V): 1500 Rise time (ns): 5 Fall time (ns): 6 Undervoltage lockout (typ) (V): 5
Number of channels: 1 Isolation rating: Reinforced Withstand isolation voltage (VISO) (Vrms): 5700 Working isolation voltage (VIOWM) (Vrms): 1414 Transient isolation voltage (VIOTM) (VPK): 8000 Power switch: GaNFET, MOSFET Peak output current (A): 6 Features: High CMTI Output VCC/VDD (max) (V): 18 Output VCC/VDD (min) (V): 6 Input supply voltage (min) (V): 3 Input supply voltage (max) (V): 5.5 Propagation delay time (µs): 0.028 Input threshold: CMOS, TTL Operating temperature range (°C): -40 to 125 Rating: Catalog Bootstrap supply voltage (max) (V): 1500 Rise time (ns): 5 Fall time (ns): 6 Undervoltage lockout (typ) (V): 5

UCC21320-Q1


数据:
分类: 微电路 / 半导体集成电路 / 接口电路 / 驱动器

描述: 具有可编程死区时间且采用 DWK 封装的汽车类 3.75kVrms、4A/6A 双通道隔离式栅极驱动器

Number of channels: 2 Isolation rating: Basic Withstand isolation voltage (VISO) (Vrms): 3750 Working isolation voltage (VIOWM) (Vrms): 2121 Transient isolation voltage (VIOTM) (VPK): 5303, 6250 Power switch: IGBT, MOSFET, SiCFET Peak output current (A): 6 Features: Disable, Programmable dead time Output VCC/VDD (max) (V): 25 Output VCC/VDD (min) (V): 9.2 Input supply voltage (min) (V): 3 Input supply voltage (max) (V): 18 Propagation delay time (µs): 0.019 Input threshold: CMOS, TTL Operating temperature range (°C): -40 to 125 Rating: Automotive Bootstrap supply voltage (max) (V): 2121 Rise time (ns): 6 Fall time (ns): 19 Undervoltage lockout (typ) (V): 8, 12
Number of channels: 2 Isolation rating: Basic Withstand isolation voltage (VISO) (Vrms): 3750 Working isolation voltage (VIOWM) (Vrms): 2121 Transient isolation voltage (VIOTM) (VPK): 5303, 6250 Power switch: IGBT, MOSFET, SiCFET Peak output current (A): 6 Features: Disable, Programmable dead time Output VCC/VDD (max) (V): 25 Output VCC/VDD (min) (V): 9.2 Input supply voltage (min) (V): 3 Input supply voltage (max) (V): 18 Propagation delay time (µs): 0.019 Input threshold: CMOS, TTL Operating temperature range (°C): -40 to 125 Rating: Automotive Bootstrap supply voltage (max) (V): 2121 Rise time (ns): 6 Fall time (ns): 19 Undervoltage lockout (typ) (V): 8, 12

UCC21750-Q1


数据:
分类: 微电路 / 半导体集成电路 / 接口电路 / 驱动器

描述: 适用于 IGBT/SiC 且具有 DESAT 和内部钳位的汽车级 5.7kVrms、±10A 单通道隔离式栅极驱动器

Number of channels: 1 Isolation rating: Reinforced Withstand isolation voltage (VISO) (Vrms): 5700 Working isolation voltage (VIOWM) (Vrms): 2121 Transient isolation voltage (VIOTM) (VPK): 8000, 8400 TI functional safety category: Functional Safety Quality-Managed Power switch: IGBT, SiCFET Peak output current (A): 10 Output VCC/VDD (max) (V): 33 Output VCC/VDD (min) (V): 13 Input supply voltage (min) (V): 3 Input supply voltage (max) (V): 5.5 Propagation delay time (µs): 0.09 Input threshold: CMOS Operating temperature range (°C): -40 to 125 Rating: Automotive Bootstrap supply voltage (max) (V): 2121 Rise time (ns): 33 Fall time (ns): 27 Undervoltage lockout (typ) (V): 12
Number of channels: 1 Isolation rating: Reinforced Withstand isolation voltage (VISO) (Vrms): 5700 Working isolation voltage (VIOWM) (Vrms): 2121 Transient isolation voltage (VIOTM) (VPK): 8000, 8400 TI functional safety category: Functional Safety Quality-Managed Power switch: IGBT, SiCFET Peak output current (A): 10 Output VCC/VDD (max) (V): 33 Output VCC/VDD (min) (V): 13 Input supply voltage (min) (V): 3 Input supply voltage (max) (V): 5.5 Propagation delay time (µs): 0.09 Input threshold: CMOS Operating temperature range (°C): -40 to 125 Rating: Automotive Bootstrap supply voltage (max) (V): 2121 Rise time (ns): 33 Fall time (ns): 27 Undervoltage lockout (typ) (V): 12

UCC21710-Q1


数据:
分类: 微电路 / 半导体集成电路 / 接口电路 / 驱动器

描述: 适用于 IGBT/SiC 且具有过流保护的汽车级 5.7kVrms 10A 单通道隔离式栅极驱动器

Number of channels: 1 Isolation rating: Reinforced Withstand isolation voltage (VISO) (Vrms): 5700 Working isolation voltage (VIOWM) (Vrms): 2121 Transient isolation voltage (VIOTM) (VPK): 8000, 8400 TI functional safety category: Functional Safety Quality-Managed Power switch: IGBT, SiCFET Peak output current (A): 10 Output VCC/VDD (max) (V): 33 Output VCC/VDD (min) (V): 13 Input supply voltage (min) (V): 3 Input supply voltage (max) (V): 5.5 Propagation delay time (µs): 0.09 Input threshold: CMOS Operating temperature range (°C): -40 to 125 Rating: Automotive Bootstrap supply voltage (max) (V): 2121 Rise time (ns): 33 Fall time (ns): 27 Undervoltage lockout (typ) (V): 12
Number of channels: 1 Isolation rating: Reinforced Withstand isolation voltage (VISO) (Vrms): 5700 Working isolation voltage (VIOWM) (Vrms): 2121 Transient isolation voltage (VIOTM) (VPK): 8000, 8400 TI functional safety category: Functional Safety Quality-Managed Power switch: IGBT, SiCFET Peak output current (A): 10 Output VCC/VDD (max) (V): 33 Output VCC/VDD (min) (V): 13 Input supply voltage (min) (V): 3 Input supply voltage (max) (V): 5.5 Propagation delay time (µs): 0.09 Input threshold: CMOS Operating temperature range (°C): -40 to 125 Rating: Automotive Bootstrap supply voltage (max) (V): 2121 Rise time (ns): 33 Fall time (ns): 27 Undervoltage lockout (typ) (V): 12