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HMC635LC4


数据:
分类: 微电路 / 微波半导体集成电路 / 放大器 / 宽带放大器

描述: GaAs PHEMT MMIC驱动放大器，18 - 40 GHz

RF Primary Function: Driver Amp, Wideband Distributed Amps Gain dB (typ): 18.5dB OP1dB (typ): 22dBm NF (typ): 7dB OIP3 (typ): 27dBm Vs (typ): 5V Is (typ): 280mA Package: 24-Lead LCC (4 x 4mm) Product Lifecycle: 量产 # of Channels: 1 Eval / Ref Circuit: Reference circuit Automotive: No Temp Range: -55 to 85°C EP: No Specified at Freq: None Package Height: None Design Tools: None Launch Date: None Gain dB (max): None Gain dB (min): None
Package Area: None Vs+ (max): None Vs+ (min): None Reliability Level: None

HMC635LC4TR-R5


数据:
分类: 微电路 / 微波半导体集成电路 / 放大器 / 宽带放大器

描述: GaAs PHEMT MMIC驱动放大器，18 - 40 GHz

RF Primary Function: Driver Amp, Wideband Distributed Amps Gain dB (typ): 18.5dB OP1dB (typ): 22dBm NF (typ): 7dB OIP3 (typ): 27dBm Vs (typ): 5V Is (typ): 280mA Package: 24-Lead LCC (4 x 4mm) Product Lifecycle: 量产 # of Channels: 1 Eval / Ref Circuit: Reference circuit Automotive: No Temp Range: -55 to 85°C EP: No Specified at Freq: None Package Height: None Design Tools: None Launch Date: None Gain dB (max): None Gain dB (min): None
Package Area: None Vs+ (max): None Vs+ (min): None Reliability Level: None

HMC635LC4TR


数据:
分类: 微电路 / 微波半导体集成电路 / 放大器 / 宽带放大器

描述: GaAs PHEMT MMIC驱动放大器，18 - 40 GHz

RF Primary Function: Driver Amp, Wideband Distributed Amps Gain dB (typ): 18.5dB OP1dB (typ): 22dBm NF (typ): 7dB OIP3 (typ): 27dBm Vs (typ): 5V Is (typ): 280mA Package: 24-Lead LCC (4 x 4mm) Product Lifecycle: 量产 # of Channels: 1 Eval / Ref Circuit: Reference circuit Automotive: No Temp Range: -55 to 85°C EP: No Specified at Freq: None Package Height: None Design Tools: None Launch Date: None Gain dB (max): None Gain dB (min): None
Package Area: None Vs+ (max): None Vs+ (min): None Reliability Level: None

HMC636ST89


分类: 微电路 / 微波半导体集成电路 / 放大器 / 宽带放大器

描述: 高IP3 SMT放大器，0.2 - 4.0 GHz

RF Primary Function: Gain Block Gain dB (typ): 13dB OP1dB (typ): 22dBm NF (typ): 2.5dB OIP3 (typ): 39dBm Vs (typ): 5V Is (typ): 155mA Package: 3-Lead SOT-89 Product Lifecycle: 推荐用于新设计 # of Channels: 1 Vs+ (max): 5.5V Eval / Ref Circuit: Evaluation board Automotive: No Temp Range: -40 to 85°C Package Height: 1.6mm (3-Lead SOT-89) (HMC636ST89E)mm EP: No Specified at Freq: None Design Tools: None Launch Date: None Gain dB (max): None
Gain dB (min): None Vs+ (min): None Reliability Level: None

HMC636ST89E


分类: 微电路 / 微波半导体集成电路 / 放大器 / 宽带放大器

描述: 高IP3 SMT放大器，0.2 - 4.0 GHz

RF Primary Function: Gain Block Gain dB (typ): 13dB OP1dB (typ): 22dBm NF (typ): 2.5dB OIP3 (typ): 39dBm Vs (typ): 5V Is (typ): 155mA Package: 3-Lead SOT-89 Product Lifecycle: 推荐用于新设计 # of Channels: 1 Vs+ (max): 5.5V Eval / Ref Circuit: Evaluation board Automotive: No Temp Range: -40 to 85°C Package Height: 1.6mm (3-Lead SOT-89) (HMC636ST89E)mm EP: No Specified at Freq: None Design Tools: None Launch Date: None Gain dB (max): None
Gain dB (min): None Vs+ (min): None Reliability Level: None

HMC636ST89ETR


分类: 微电路 / 微波半导体集成电路 / 放大器 / 宽带放大器

描述: 高IP3 SMT放大器，0.2 - 4.0 GHz

RF Primary Function: Gain Block Gain dB (typ): 13dB OP1dB (typ): 22dBm NF (typ): 2.5dB OIP3 (typ): 39dBm Vs (typ): 5V Is (typ): 155mA Package: 3-Lead SOT-89 Product Lifecycle: 推荐用于新设计 # of Channels: 1 Vs+ (max): 5.5V Eval / Ref Circuit: Evaluation board Automotive: No Temp Range: -40 to 85°C Package Height: 1.6mm (3-Lead SOT-89) (HMC636ST89E)mm EP: No Specified at Freq: None Design Tools: None Launch Date: None Gain dB (max): None
Gain dB (min): None Vs+ (min): None Reliability Level: None

HMC636ST89TR


分类: 微电路 / 微波半导体集成电路 / 放大器 / 宽带放大器

描述: 高IP3 SMT放大器，0.2 - 4.0 GHz

RF Primary Function: Gain Block Gain dB (typ): 13dB OP1dB (typ): 22dBm NF (typ): 2.5dB OIP3 (typ): 39dBm Vs (typ): 5V Is (typ): 155mA Package: 3-Lead SOT-89 Product Lifecycle: 推荐用于新设计 # of Channels: 1 Vs+ (max): 5.5V Eval / Ref Circuit: Evaluation board Automotive: No Temp Range: -40 to 85°C Package Height: 1.6mm (3-Lead SOT-89) (HMC636ST89E)mm EP: No Specified at Freq: None Design Tools: None Launch Date: None Gain dB (max): None
Gain dB (min): None Vs+ (min): None Reliability Level: None

HMC637A


分类: 微电路 / 微波半导体集成电路 / 放大器 / 宽带放大器

描述: GaAs MMIC 1 W功率放大器，DC - 6 GHz

RF Primary Function: Power Amp, Wideband Distributed Amps Gain dB (typ): 15.5dB OP1dB (typ): 30.5dBm NF (typ): 4dB OIP3 (typ): 43dBm Vs (typ): 12V Is (typ): 400mA Package: CHIPS OR DIE Product Lifecycle: 量产 # of Channels: 1 Vs+ (min): 8V Vs+ (max): 13V Gain dB (min): 12.5dB Gain dB (max): 15.5dB Automotive: No EP: No Specified at Freq: None Package Height: None Design Tools: None Launch Date: None
Temp Range: None Package Area: None Eval / Ref Circuit: None Reliability Level: None

HMC637ALP5E


数据:
分类: 微电路 / 微波半导体集成电路 / 放大器 / 宽带放大器

描述: GaAs、pHEMT、MMIC、1 W功率放大器，0.1 GHz至6 GHz

RF Primary Function: Power Amp, Wideband Distributed Amps Gain dB (typ): 15.5dB OP1dB (typ): 29dBm NF (typ): 5dB OIP3 (typ): 44dBm Vs (typ): 12V Is (typ): 400mA Product Lifecycle: 量产 # of Channels: 1 Vs+ (min): 8V Vs+ (max): 13V Gain dB (min): 12.5dB Gain dB (max): 15.5dB Automotive: No Temp Range: -55 to 105°C EP: No Specified at Freq: None Design Tools: None Launch Date: None Eval / Ref Circuit: None Reliability Level: None

HMC637ASCPZ-EP-PT


数据:
分类: 微电路 / 微波半导体集成电路 / 放大器 / 宽带放大器

描述: GaAs、pHEMT、MMIC、1 W功率放大器，0.1 GHz至6 GHz

RF Primary Function: Power Amp, Wideband Distributed Amps Gain dB (typ): 15.5dB OP1dB (typ): 29dBm NF (typ): 5dB OIP3 (typ): 44dBm Vs (typ): 12V Is (typ): 400mA Product Lifecycle: 量产 # of Channels: 1 Vs+ (min): 8V Vs+ (max): 13V Gain dB (min): 12.5dB Gain dB (max): 15.5dB Automotive: No Temp Range: -55 to 105°C EP: No Specified at Freq: None Design Tools: None Launch Date: None Eval / Ref Circuit: None Reliability Level: None