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HMC637ALP5ETR


数据:
分类: 微电路 / 微波半导体集成电路 / 放大器 / 宽带放大器

描述: GaAs、pHEMT、MMIC、1 W功率放大器，0.1 GHz至6 GHz

RF Primary Function: Power Amp, Wideband Distributed Amps Gain dB (typ): 15.5dB OP1dB (typ): 29dBm NF (typ): 5dB OIP3 (typ): 44dBm Vs (typ): 12V Is (typ): 400mA Product Lifecycle: 量产 # of Channels: 1 Vs+ (min): 8V Vs+ (max): 13V Gain dB (min): 12.5dB Gain dB (max): 15.5dB Automotive: No Temp Range: -55 to 105°C EP: No Specified at Freq: None Design Tools: None Launch Date: None Eval / Ref Circuit: None Reliability Level: None

HMC637ASCPZ-EP-R7


数据:
分类: 微电路 / 微波半导体集成电路 / 放大器 / 宽带放大器

描述: GaAs、pHEMT、MMIC、1 W功率放大器，0.1 GHz至6 GHz

RF Primary Function: Power Amp, Wideband Distributed Amps Gain dB (typ): 15.5dB OP1dB (typ): 29dBm NF (typ): 5dB OIP3 (typ): 44dBm Vs (typ): 12V Is (typ): 400mA Product Lifecycle: 量产 # of Channels: 1 Vs+ (min): 8V Vs+ (max): 13V Gain dB (min): 12.5dB Gain dB (max): 15.5dB Automotive: No Temp Range: -55 to 105°C EP: No Specified at Freq: None Design Tools: None Launch Date: None Eval / Ref Circuit: None Reliability Level: None

HMC659


数据:
分类: 微电路 / 微波半导体集成电路 / 放大器 / 宽带放大器

描述: 功率放大器芯片，DC - 15 GHz

RF Primary Function: Power Amp, Wideband Distributed Amps Gain dB (typ): 19dB OP1dB (typ): 26.5dBm NF (typ): 2dB OIP3 (typ): 32dBm Vs (typ): 8V Is (typ): 300mA Package: CHIPS OR DIE Product Lifecycle: 量产 # of Channels: 1 Vs+ (max): 9V Gain dB (min): 15dB Specified at Freq: 11GHz Automotive: No Temp Range: -55 to 85°C EP: No Package Height: None Design Tools: None Launch Date: None Gain dB (max): None
Package Area: None Vs+ (min): None Eval / Ref Circuit: None Reliability Level: None

HMC659-SX


数据:
分类: 微电路 / 微波半导体集成电路 / 放大器 / 宽带放大器

描述: 功率放大器芯片，DC - 15 GHz

RF Primary Function: Power Amp, Wideband Distributed Amps Gain dB (typ): 19dB OP1dB (typ): 26.5dBm NF (typ): 2dB OIP3 (typ): 32dBm Vs (typ): 8V Is (typ): 300mA Package: CHIPS OR DIE Product Lifecycle: 量产 # of Channels: 1 Vs+ (max): 9V Gain dB (min): 15dB Specified at Freq: 11GHz Automotive: No Temp Range: -55 to 85°C EP: No Package Height: None Design Tools: None Launch Date: None Gain dB (max): None
Package Area: None Vs+ (min): None Eval / Ref Circuit: None Reliability Level: None

HMC659LC5


分类: 微电路 / 微波半导体集成电路 / 放大器 / 宽带放大器

描述: 功率放大器，采用SMT封装，DC - 15 GHz

RF Primary Function: Power Amp, Wideband Distributed Amps Gain dB (typ): 19dB OP1dB (typ): 27.5dBm NF (typ): 2.5dB OIP3 (typ): 32dBm Vs (typ): 8V Is (typ): 300mA Package: 32-Lead LFCSP_CAV (5mm x 5mm w/ EP) Product Lifecycle: 量产 # of Channels: 1 Vs+ (max): 9V Gain dB (min): 15dB Specified at Freq: 11GHz Eval / Ref Circuit: Evaluation board Automotive: No Temp Range: -55 to 85°C EP: No Design Tools: None Launch Date: None Gain dB (max): None
Vs+ (min): None Reliability Level: None

HMC659LC5TR


分类: 微电路 / 微波半导体集成电路 / 放大器 / 宽带放大器

描述: 功率放大器，采用SMT封装，DC - 15 GHz

RF Primary Function: Power Amp, Wideband Distributed Amps Gain dB (typ): 19dB OP1dB (typ): 27.5dBm NF (typ): 2.5dB OIP3 (typ): 32dBm Vs (typ): 8V Is (typ): 300mA Package: 32-Lead LFCSP_CAV (5mm x 5mm w/ EP) Product Lifecycle: 量产 # of Channels: 1 Vs+ (max): 9V Gain dB (min): 15dB Specified at Freq: 11GHz Eval / Ref Circuit: Evaluation board Automotive: No Temp Range: -55 to 85°C EP: No Design Tools: None Launch Date: None Gain dB (max): None
Vs+ (min): None Reliability Level: None

HMC659LC5TR-R5


分类: 微电路 / 微波半导体集成电路 / 放大器 / 宽带放大器

描述: 功率放大器，采用SMT封装，DC - 15 GHz

RF Primary Function: Power Amp, Wideband Distributed Amps Gain dB (typ): 19dB OP1dB (typ): 27.5dBm NF (typ): 2.5dB OIP3 (typ): 32dBm Vs (typ): 8V Is (typ): 300mA Package: 32-Lead LFCSP_CAV (5mm x 5mm w/ EP) Product Lifecycle: 量产 # of Channels: 1 Vs+ (max): 9V Gain dB (min): 15dB Specified at Freq: 11GHz Eval / Ref Circuit: Evaluation board Automotive: No Temp Range: -55 to 85°C EP: No Design Tools: None Launch Date: None Gain dB (max): None
Vs+ (min): None Reliability Level: None

HMC740ST89E


分类: 微电路 / 微波半导体集成电路 / 放大器 / 宽带放大器

描述: InGaP HBT有源偏置MMIC放大器，0.05 - 3 GHz

RF Primary Function: Gain Block Gain dB (typ): 15dB OP1dB (typ): 18dBm NF (typ): 3.5dB OIP3 (typ): 38dBm Vs (typ): 5V Is (typ): 88mA Package: 3-Lead SOT-89 Product Lifecycle: 推荐用于新设计 # of Channels: 1 Vs+ (max): 5.5V Eval / Ref Circuit: Evaluation board Automotive: No Temp Range: -40 to 85°C Package Height: 1.6mm (3-Lead SOT-89) (HMC740ST89E)mm EP: No Specified at Freq: None Design Tools: None Launch Date: None Gain dB (max): None
Gain dB (min): None Vs+ (min): None Reliability Level: None

HMC740ST89ETR


分类: 微电路 / 微波半导体集成电路 / 放大器 / 宽带放大器

描述: InGaP HBT有源偏置MMIC放大器，0.05 - 3 GHz

RF Primary Function: Gain Block Gain dB (typ): 15dB OP1dB (typ): 18dBm NF (typ): 3.5dB OIP3 (typ): 38dBm Vs (typ): 5V Is (typ): 88mA Package: 3-Lead SOT-89 Product Lifecycle: 推荐用于新设计 # of Channels: 1 Vs+ (max): 5.5V Eval / Ref Circuit: Evaluation board Automotive: No Temp Range: -40 to 85°C Package Height: 1.6mm (3-Lead SOT-89) (HMC740ST89E)mm EP: No Specified at Freq: None Design Tools: None Launch Date: None Gain dB (max): None
Gain dB (min): None Vs+ (min): None Reliability Level: None

HMC741ST89E


分类: 微电路 / 微波半导体集成电路 / 放大器 / 宽带放大器

描述: InGaP HBT有源偏置MMIC放大器，0.05 - 3 GHz

RF Primary Function: Gain Block Gain dB (typ): 20dB OP1dB (typ): 18.8dBm NF (typ): 2.5dB OIP3 (typ): 40.5dBm Vs (typ): 5V Is (typ): 96mA Package: 3-Lead SOT-89 Product Lifecycle: 推荐用于新设计 # of Channels: 1 Vs+ (max): 5.5V Eval / Ref Circuit: Evaluation board Automotive: No Temp Range: -40 to 85°C Package Height: 1.6mm (3-Lead SOT-89) (HMC741ST89E)mm EP: No Specified at Freq: None Design Tools: None Launch Date: None Gain dB (max): None
Gain dB (min): None Vs+ (min): None Reliability Level: None