IDW80C65D2
分类: 半导体分立器件和附件 / 二极管 / 普通二极管 / 功率二极管
描述: 650 V IGBT silicon power diode in TO-247 package
物料参数
| Configuration: | Common Cathode |
| I(FSM): | NoneA |
| IF: | 40.0A |
| IR: | NoneµA |
| Irrm: | 3.6A |
| Mounting: | THT |
| Operating Temperature: | None°C |
| Ptot: | NoneW |
| Package: | TO-247 |
| Qrr: | 0.18µC |
| RthJC: | NoneK/W |
| VF: | 1.6V |
| trr: | 68.0ns |
| Voltage Class: | NoneV |
无库存
