6ED2231S12T

供应商:

描述: 1200 V, 3-phase gate driver for IGBT/ SiC modules and discretes with integrated bootstrap diode, over current and more tighten UVLO protection

物料参数

Channels:6.0
Configuration:Three Phase
Output Current(Sink):0.65A
Output Current(Source):0.35A
Turn Off Propagation Delay:650.0ns
Turn On Propagation Delay:700.0ns
VBS UVLO(Off):11.3V
VBS UVLO(On):12.2V
VCC UVLO(Off):11.3V
VCC UVLO(On):12.2V
Voltage Class:1200.0V
Isolation Type:SOI (Silicon On Insulator)
Input Vcc:NoneV
Isolation Type:Functional levelshift
Qualification:Industrial
价格梯度 价格
1+¥54.7540
包装: 库存:5