CY7C2670KV18-550BZI

制造商:

物料参数

Architecture:DDR-II+ CIO, ODT
Bank Switching:N
Burst Length(Words):2
ECC:N
Family:DDR-II+ CIO, ODT
Frequency:550.0MHz
Lead Ball Finish:Sn/Pb
On-Die Termination:Y
Operating Temperature:None°C
Organization (X x Y):4Mb x 36
Peak Reflow Temp:260.0°C
Qualification:Industrial
Read Latency (Cycles):2.5
Data Width:x 36
Operating Voltage:NoneV
Interfaces:Parallel
Density:147456.0kBit
Density:144.0MBit
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