BSL211SP
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: P-channel enhancement mode Field-Effect Transistor (FET), -20 V, TSOP-6
物料参数
| VDS: | NoneV |
| Ptot: | NoneW |
| IDpuls: | NoneA |
| VGS(th): | NoneV |
| RthJA: | NoneK/W |
| Pin Count: | 6.0Pins |
| Package: | TSOP-6 |
| Polarity: | P |
| Mounting: | SMD |
| Mode: | Enhancement |
| Ciss: | 654.0pF |
| Coss: | 241.0pF |
| RDS (on)(@2.5V): | NonemΩ |
| RDS (on)(@4.5V): | NonemΩ |
| RDS (on)(@4.5V LL): | NonemΩ |
| Special Features: | Small Power |
| ID (@25°C): | NoneA |
| QG(typ @4.5V): | NonenC |
| Operating Temperature: | None°C |
| Budgetary Price €/1k: | 0.17 |
